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IXUN280N10

型号:

IXUN280N10

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

78 K

Advanced Technical Information  
IXUN 280N10  
VDSS = 100 V  
ID25 = 280 A  
RDS(on) = 3.9 m(typ.)  
Trench Power MOSFET  
Very low RDS(on)  
KS  
SOT-227 B,  
miniBLOC  
D
S
G
G
S
KS  
D
G = Gate  
D = Drain  
S = Source  
KS = Kelvin Source  
Symbol  
VDSS  
Conditions  
Maximum Ratings  
Features  
TJ = 25°C to 150°C  
100  
V
trench MOSFET  
• very low on state resistance RDSon  
• fast switching  
• fast body diode  
• industry standard outline  
• isolated package  
VGS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
ID90  
TC = 25°C  
TC = 90°C  
280  
210  
A
A
• high reliability  
ID(RMS)  
PD  
Package lead current limit  
TC = 25°C  
150  
770  
A
W
Applications  
TJ  
TJM  
Tstg  
-55 ... +150  
175  
-55 ... +175  
°C  
°C  
°C  
• automotive  
• converters for fuel cells  
• AC drives  
• choppers to replace series dropping  
resistors used for motors, heaters etc.  
• DC-DC converters  
• electronic switches  
• replacing relays and fuses  
• power supplies  
VISOL  
50/60 Hz, RMS, t = 1 min  
2500  
3000  
V~  
V~  
IISOL 1 mA,  
t = 1 s  
Md  
Mounting torque  
Terminal connection torque  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Weight  
30  
g
• solar inverters  
• battery supplied systems  
• choppers or inverters for motor control  
in hand tools  
Symbol  
RDS(on)  
Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• battery chargers  
VGS = 10 V,  
Pulse test, t 300 µs, duty cycle d < 2 %  
ID = 140 A  
3.9  
5
mΩ  
Advantages  
• Easy to mount  
• Space savings  
• High power density  
VGH(th)  
IDSS  
VDS = VGS,  
ID = 4 mA  
2
4
V
VDS = VDSS  
VGS = 0 V,  
,
TJ = 25°C  
TJ = 125°C  
400  
2
µA  
mA  
IGSS  
VGS = 20 VDC, VDS = 0  
400  
nA  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2004 IXYS All rights reserved  
1 - 2  
Advanced Technical Information  
IXUN 280N10  
Symbol  
gfs  
Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VDS = 10 V, ID = 100 A, pulse test  
220  
S
Ciss  
Coss  
Crss  
18  
2.2  
1.2  
nF  
nF  
nF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
35  
85  
150  
70  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 30 V, ID = 100 A  
RG = 2.5 (external)  
Qg(on)  
Qgs  
Qgd  
440  
75  
180  
nC  
nC  
nC  
VGS = 10 V, VDS = 80 V, ID = 100 A  
with heat transfer paste  
RthJC  
RthCH  
0.19 K/W  
K/W  
0.05  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
Conditions  
IS  
VGS = 0 V  
380  
570  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = 280 A, VGS = 0 V,  
1.70  
Pulse test, t < 300 µs, duty cycle d < 2 %  
trr  
IRM  
IF = 300 A, VR = 30 V  
-di/dt = 400 A/µs  
80  
35  
ns  
A
miniBLOC, SOT-227 B  
Dim.  
Millimeter  
Inches  
M4 screws (4x) supplied  
Min.  
Max.  
Min.  
Max.  
A
B
C
D
E
F
G
H
J
K
L
M
N
0
P
Q
R
S
T
U
V
W
31.50  
7.80  
4.09  
4.09  
4.09  
14.91  
30.12  
37.80  
11.68  
8.92  
31.88  
8.20  
4.29  
4.29  
4.29  
15.11  
30.30  
38.23  
12.22  
9.60  
1.240  
.307  
.161  
.161  
.161  
.587  
1.186  
1.489  
.460  
.351  
.030  
.496  
.990  
0.78  
.195  
1.045  
.155  
.186  
.968  
-.002  
.130  
.780  
1.255  
.323  
.169  
.169  
.169  
.595  
1.193  
1.505  
.481  
.378  
.033  
.506  
1.001  
.084  
.235  
1.059  
.174  
.191  
.987  
.004  
.180  
.830  
0.76  
0.84  
12.60  
25.15  
1.98  
4.95  
26.54  
3.94  
12.85  
25.42  
2.13  
5.97  
26.90  
4.42  
4.85  
25.07  
0.10  
4.57  
21.08  
4.72  
24.59  
-0.05  
3.30  
19.81  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2004 IXYS All rights reserved  
2 - 2  
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