CZD41C
NPN Epitaxial Planar Silicon Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-252 (D-Pack)
FEATURES
ꢀ
ꢀ
ꢀ
Monolithic Construction With Built–in Base–Emitter Resistors
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Designed for General Purpose Amplifier and Low Speed
S witching Applications.
A
B
C
D
G E
PACKAGE INFORMATION
K
J
H F
N
O
P
Package
MPQ
2.5K
Leader Size
Collector
M
13 inch
TO-252
2
Millimeter
Millimeter
REF.
REF.
Min.
Max.
Min.
Max.
A
B
C
D
E
F
6.35
4.95
2.10
0.43
6.0
2.80 REF
5.40
0.60
6.90
5.50
2.50
0.9
J
K
M
N
O
P
2.30 REF.
1
Base
0.64
0.50
1.3
0
1.14
1.14
1.8
7.5
0.13
3
Emitter
0.58REF.
G
H
6.40
1.20
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
100
V
Collector to Emitter Voltage
Emitter to Base Voltage
VCEO
VEBO
IC
100
5
V
V
A
Collector Current
6
Collector Power Dissipation
Junction and Storage Temperature
PC
1.25
W
TJ,TSTG
150, -65 ~ 150
℃
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
V(BR)CBO
VCEO(SUS)
V(BR)EBO
ICEO
Min.
Typ.
Max.
Unit
Test Conditions
IC=100µA, IE=0
100
-
-
-
-
-
-
-
-
-
-
-
V
V
100
IC=30mA, IB=0
IE=100µA, IC=0
VCB=60V, IE=0
5
-
-
V
50
0.5
-
µA
Emitter cut-off current
IEBO
-
mA VEB=5V, IC=0
VCE=4V, IC=0.3A
VCE=4V, IC=3A
30
15
-
DC current gain 1
hFE
75
1.5
2
Collector-emitter saturation voltage 1
Base-emitter saturation voltage 1
VCE(sat)
VBE(on)
V
V
IC=6A, IB=0.6A
VCE=4V, IC=6A
-
VCE=10V, IC= 500mA,
f=1MHz
Transition frequency
fT
3
-
-
MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
13-Oct-2014 Rev. A
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