CZD1225
PNP Epitaxial Planar Silicon Transistor
Elektronische Bauelemente
D-Pack (TO-252)
DESCRIPTION
The CZD1225 is designed for power amplifier and driver stage
amplifier applications.
A
B
C
D
FEATURES
High transition frequency：fT = 100MHz (typ.)
G E
H F
Complements to CZD2983
K
J
N
O
P
M
Collector
MARKING
Millimeter
Min. Max.
6.8
Millimeter
Max.
2.30 REF.
REF.
REF.
Min.
A
B
C
D
E
F
6.4
5.20
2.20
0.45
6.8
2.40
5.40
0.8
J
K
M
N
O
P
1225
5.50
2.40
0.58
7.3
0.70
0.50
0.9
0
0.43
0.90
1.1
Base
Date Code
1.6
0.15
0.58
3.0
6.2
Emitter
G
H
1
1.20
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
-160
-160
-5
Unit
V
V
V
A
-1.5
Base Current
IB
-0.3
A
Total Device Dissipation (TA=25°C)
Total Device Dissipation (TC=25°C)
Junction Temperature
PD
PD
TJ
TSTG
1
15
150
-55 ~ 150
W
W
℃
℃
Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Collector-base breakdown voltage
Symbol
V(BR)CBO
V(BR)CEO
Min.
-160
-160
Typ. Max.
Unit
V
Test Conditions
IC=-1mA, IE=0
-
-
Collector-emitter breakdown voltage
-
-
V
IC=-10mA, IB=0
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter voltage
*DC current gain
Transition frequency
Output Capacitance
V(BR)EBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE
-5
-
-
-
-
-
-
-
-1
-1
-1.5
-1.0
240
-
V
IE=-1mA, IC=0
A VCB=-160V, IE=0
A VEB=-5V, IC=0
V
V
-
IC=-500mA, IB=-50mA
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-0.1A
70
-
-
-
VCE=-10V, IE=-0.1A,
fT
COB
100
30
MHz
pF
-
VCB=-10V, IE=0, f=1MHz
*Measured under pulse condition. Pulse width≦300μs, Duty Cycle≦2%
CLASSIFICATION OF hFE
Rank
O
Y
Range
70 ~ 140
120 ~ 240
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Apr-2010 Rev. A
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