CZD3303
NPN Epitaxial Planar Silicon Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-252 (D-Pack)
FEATURES
ꢀ
High Speed Switching Time
Low Collector Saturation Voltage
ꢀ
1. Base
2. Collector
3. Emitter
A
CLASSIFICATION OF hFE
C
D
B
Rank
CZD3303-O
CZD3303-Y
120~240
G E
Range
70~140
K
J
H F
N
O
P
M
PACKAGE INFORMATION
Millimeter
Millimeter
Collector
REF.
REF.
Package
MPQ
2.5K
Leader Size
Min.
Max.
Min.
Max.
2
A
B
C
D
E
F
6.35
4.95
2.10
0.43
6.0
6.90
5.50
2.50
0.9
J
K
M
N
O
P
2.30 REF.
0.64
0.50
1.3
0
1.14
1.14
1.8
TO-252
13 inch
1
Base
7.5
0.13
2.80 REF
0.58REF.
G
H
5.40
0.60
6.40
1.20
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
100
V
Collector to Emitter Voltage
Emitter to Base Voltage
VCEO
VEBO
IC
80
7
V
V
A
Collector Current
5
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
PC
1
W
°C / W
℃
RθJA
TJ,TSTG
125
150, -55 ~ 150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min.
Typ.
Max.
Unit
V
Test Conditions
100
-
-
-
IC=100µA, IE=0
IC=10mA, IB=0
80
7
-
-
-
V
-
V
IE=100µA, IC=0
VCB=100V, IE=0
VEB=7V, IC=0
-
1
µA
µA
Emitter cut-off current
IEBO
-
-
1
70
40
-
-
240
-
VCE=1V, IC=1A
VCE=1V, IC=3A
IC=3A, IB=0.15A
VCE=3V, IC=0.15A
VCE=10V, IE=0, f=1MHz
DC current gain 1
hFE
-
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
VCE(sat)
VBE(sat)
Cob
-
0.4
1.2
-
V
V
-
-
-
80
20
pF
fT
-
-
MHz VCE=4V, IC= 1A
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Nov-2014 Rev. A
Page 1 of 2
