CZD2983J
NPN Epitaxial Planar Silicon Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
D-Pack (TO-252)
DESCRIPTION
CZD2983J is designed for power amplifier and
driver stage amplifier applications.
FEATURES
ꢀ
High transition frequency
A
B
C
D
CLASSIFICATION OF hFE
Product-Rank
CZD2983J-O
CZD2983J-Y
120~240
G E
Range
70~140
K
J
H F
N
O
P
M
PACKAGE INFORMATION
Collector
Millimeter
Millimeter
Package
MPQ
Leader Size
REF.
REF.
2
Min.
Max.
Min.
Max.
A
B
C
D
E
F
6.35
4.95
2.10
0.43
6.0
6.90
5.50
2.50
0.9
J
K
M
N
O
P
2.186 2.386
TO-252
2.5K
13 inch
0.64
0.50
1.3
0
1.14
1.14
1.8
1
Base
7.5
0.13
2.90 REF
0.58REF.
G
H
5.40
0.60
6.40
1.20
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
160
160
5
Unit
V
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
V
V
A
Collector Current
1.5
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction and Storage Temperature
PC
1
W
°C/W
°C
RθJA
125
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage 1
Emitter-Ease Breakdown Voltage
Collector Cut-Off Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min. Typ. Max. Unit
Test Condition
IC=1mA, IE=0
160
-
-
V
V
160
-
-
-
IC=10mA, IB=0
5
-
-
V
IE=1mA, IC=0
-
1
µA
µA
V
VCB=160V, IE=0
VEB=5V, IC=0
Emitter Cut-Off Current
IEBO
-
-
-
1
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(sat)
VBE
-
1.5
1
IC=500mA, IB=50mA
VCE=5V, IC=500mA
VCE=5V, IC=100mA
-
-
V
DC Current Gain
hFE
70
-
-
240
-
Transition Frequency
fT
100
25
MHz VCE=10V, IC=100mA
pF VCB=10V, IE=0, f=1MHz
Collector Output Capacitance
COB
-
-
Notes:
1. Pulse test.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
17-Nov-2015 Rev. A
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