CZD1182
PNP Silicon
Elektronische Bauelemente
General Purpose Transistor
TO-252
6. 50Ć0. 15
5. 30Ć0. 10
2. 30 0. 10
Ć
FEATURES
C
0. 51 0. 05
Ć
The CZD1182 is designed for medium power amplifier application
Low collector saturation voltage: VCE(sat)=-0.5V (Typ.)
RoHS Compliant Product
1. 20
0. 51 0. 10
Ć
0
0. 10
5
Ć
5
0. 80Ć0. 10
MARKING : 1182
(With Date Code)
0. 60 0. 10
Ć
2. 30 0. 10
Ć
0
9
Ć
2. 30 0. 10
Ć
0. 51
B
C
E
O
MAXIMUM RATINGS* TA=25 C unless otherwise noted
Parameter
Symbol
Value
Units
Collector-Base Voltage
VCBO
VCEO
-40
-32
-5
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
VEBO
IC
V
Collector Current -Continuous
Collector Current -Pulse,Pw=100mS
Collector Dissipation
-2
A
IC
-3
A
PC
10
W
Junction and Storage Temperature
TJ, Tstg
+150,-55~+150
ć
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
-40
-32
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
Ic=-50µA, IE=0
V(BR)CEO Ic= -1mA,IB=0
V(BR)EBO IE= -50µA, IC=0
V
V
ICBO
IEBO
hFE
VCB=-20V,IE=0
-1
uA
uA
Emitter cut-off current
VEB=-4V,IC=0
-1
DC current gain
VCE=-3V,IC=-500mA
IC=-2000mA,IB=-200mA
VCE=-5V,Ic=500mA,f=100MHz
VCB=-10V,f=1MHz
82
390
-800
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
-500
100
50
mV
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE
Rank
P
Q
R
Range
82 - 180
120 - 270
180 - 390
Any changing of specification will not be informed individual
http://www.SeCoSGmbH.com
01-Jun-2006 Rev. A
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