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8N65KG-TF2-T

型号：

8N65KG-TF2-T

品牌：

UTC[ Unisonic Technologies ]

页数：

6 页

PDF大小：

192 K

下载PDF手册
UNISONIC TECHNOLOGIES CO., LTD  
8N65K-MT  
Power MOSFET  
8A, 650V N-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC 8N65K-MT is a high voltage and high current power  
MOSFET designed to have better characteristics, such as fast  
switching time, low gate charge, low on-state resistance and high  
rugged avalanche characteristics. This power MOSFET is usually  
used in high speed switching applications at power supplies, PWM  
motor controls, high efficient DC to DC converters and bridge  
circuits.  
FEATURES  
* RDS(ON) < 1.3 Ω @ VGS = 10 V, ID = 4 A  
* Fast switching capability  
* Avalanche energy specified  
* Improved dv/dt capability, high ruggedness  
SYMBOL  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
D
D
D
3
S
S
S
8N65KL-TF1-T  
8N65KL-TF2-T  
8N65KL-TF3T-T  
8N65KG-TF1-T  
8N65KG-TF2-T  
8N65KG-TF3T-T  
TO-220F1  
TO-220F2  
TO-220F3  
G
G
G
Tube  
Tube  
Tube  
Note: Pin Assignment: G: Gate  
D: Drain  
S: Source  
8N65KL-TF1-T  
(1) T: Tube  
(1)Packing Type  
(2)Package Type  
(3)Green Package  
(2) TF1: TO-220F1, TF2: TO-220F2, TF3T: TO-220F3  
(3) L: Lead Free, G: Halogen Free and Lead Free  
MARKING  
www.unisoniccom.tw  
Copyright © 2015 Unisonic Technologies Co., Ltd  
1 of 6  
QW-R502-A98.D  
8N65K-MT  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
650  
±30  
V
Continuous  
8
A
Drain Current  
Pulsed (Note 2)  
Single Pulsed (Note 3)  
IDM  
32  
A
Avalanche Energy  
EAS  
350  
mJ  
V/ns  
W
Peak Diode Recovery dv/dt (Note 4)  
Power Dissipation  
dv/dt  
PD  
4.5  
48  
Junction Temperature  
TJ  
+150  
-55 ~ +150  
-55 ~ +150  
°C  
°C  
°C  
Operating Temperature  
Storage Temperature  
TOPR  
TSTG  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating : Pulse width limited by TJ  
3. L=10.93mH, IAS=8A, VDD= 50V, RG=25Ω, Starting TJ=25°C  
4. ISD ≤8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C  
THERMAL DATA  
PARAMETER  
SYMBOL  
θJA  
RATING  
62.5  
UNIT  
°C/W  
°C/W  
Junction to Ambient  
Junction to Case  
θJC  
2.6  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 6  
QW-R502-A98.D  
www.unisonic.com.tw  
8N65K-MT  
Power MOSFET  
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
BVDSS  
IDSS  
VGS = 0 V, ID = 250 μA  
VDS = 650 V, VGS = 0 V  
VGS = 30 V, VDS = 0 V  
650  
V
10  
µA  
Forward  
Reverse  
100 nA  
-100 nA  
V/°C  
Gate-Source Leakage Current  
IGSS  
VGS = -30 V, VDS = 0 V  
J ID =250μA,Referenced to 25°C  
△BVDSS/△T  
Breakdown Voltage Temperature Coefficient  
ON CHARACTERISTICS  
Gate Threshold Voltage  
Static Drain-Source On-State Resistance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
0.7  
VGS(TH)  
RDS(ON)  
VDS = VGS, ID = 250 μA  
2.0  
4.0  
0.9 1.3  
V
VGS = 10 V, ID = 4A  
Ω
CISS  
COSS  
CRSS  
800 1000 pF  
110 130 pF  
VDS = 25 V, VGS = 0V,  
Output Capacitance  
f = 1MHz  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
7
15  
pF  
tD(ON)  
tR  
tD(OFF)  
tF  
57  
62  
70  
90  
ns  
ns  
VDD = 30V, ID =0.5A,  
Turn-On Rise Time  
RG = 25Ω  
(Note 1, 2)  
Turn-Off Delay Time  
150 170 ns  
Turn-Off Fall Time  
70  
26  
7.5  
6
90  
45  
ns  
nC  
nC  
nC  
Total Gate Charge  
QG  
VDS= 50V, ID=1.3A,  
Gate-Source Charge  
QGS  
QGD  
VGS= 10 V (Note 1, 2)  
Gate-Drain Charge  
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
Drain-Source Diode Forward Voltage  
Maximum Continuous Drain-Source Diode  
Forward Current  
VSD  
VGS = 0 V, IS =8A  
1.4  
8
V
A
IS  
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
32  
A
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%  
2. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 6  
QW-R502-A98.D  
www.unisonic.com.tw  
8N65K-MT  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
* ISD controlled by pulse period  
* D.U.T.-Device Under Test  
Same Type  
as D.U.T.  
VGS  
Peak Diode Recovery dv/dt Test Circuit  
P. W.  
Period  
VGS  
(Driver)  
Period  
D=  
P.W.  
10V  
=
VGS  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
VDD  
(D.U.T.)  
Body Diode  
Forward Voltage Drop  
Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 6  
QW-R502-A98.D  
www.unisonic.com.tw  
8N65K-MT  
Power MOSFET  
TEST CIRCUITS AND WAVEFORMS (Cont.)  
RL  
VDS  
VDS  
90%  
VDD  
VGS  
RG  
10%  
VGS  
D.U.T.  
10V  
tD(ON)  
tD(OFF)  
tF  
tR  
Switching Test Circuit  
Switching Waveforms  
VGS  
QG  
10V  
QGS  
QGD  
Charge  
Gate Charge Test Circuit  
Gate Charge Waveform  
BVDSS  
IAS  
ID(t)  
VDS(t)  
VDD  
Time  
tp  
Unclamped Inductive Switching Test Circuit  
Unclamped Inductive Switching Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 6  
QW-R502-A98.D  
www.unisonic.com.tw  
8N65K-MT  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 6  
QW-R502-A98.D  
www.unisonic.com.tw  
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