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8N60G-A-TF1-T

型号：

8N60G-A-TF1-T

品牌：

UTC[ Unisonic Technologies ]

页数：

8 页

PDF大小：

211 K

下载PDF手册
UNISONIC TECHNOLOGIES CO., LTD  
8N60  
Power MOSFET  
7.5 Amps, 600/650 Volts  
N-CHANNEL POWER MOSFET  
„
DESCRIPTION  
The UTC 8N60 is a high voltage and high current power  
MOSFET, designed to have better characteristics, such as fast  
switching time, low gate charge, low on-state resistance and have  
a high rugged avalanche characteristics. This power MOSFET is  
usually used at high speed switching applications in power  
supplies, PWM motor controls, high efficient DC to DC converters  
and bridge circuits.  
„
FEATURES  
* RDS(ON) = 1.2Ω@VGS = 10 V  
* Ultra low gate charge ( typical 28 nC )  
* Low reverse transfer capacitance ( CRSS = typical 12.0 pF )  
* Fast switching capability  
* Avalanche energy specified  
* Improved dv/dt capability, high ruggedness  
„
SYMBOL  
2.Drain  
1.Gate  
3.Source  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Lead Free  
Halogen Free  
1
2
3
S
S
S
S
8N60L-x-TA3-T  
8N60L-x-TF1-T  
8N60L-x-TF3-T  
8N60L-x-T2Q-T  
8N60G-x-TA3-T  
8N60G-x-TF1-T  
8N60G-x-TF3-T  
8N60G-x-T2Q-T  
TO-220  
TO-220F1  
TO-220F  
TO-262  
G
G
G
G
D
D
D
D
Tube  
Tube  
Tube  
Tube  
Note: Pin Assignment: G: Gate D: Drain S: Source  
(1) T: Tube  
8N60L-x-TA3-T  
(1)Packing Type  
(2) TA3: TO-220, TF1: TO220-F1, TF3: TO-220F  
(2) T2Q: TO-262  
(2)Package Type  
(3)Drain-Source Voltage  
(4)Lead Plating  
(3) A: 600V, B: 650V  
(4) G: Halogen Free, L: Lead Free  
www.unisonic.com.tw  
1 of 8  
Copyright © 2009 Unisonic Technologies Co., Ltd  
QW-R502-115,D  
8N60  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
RATINGS  
UNIT  
V
8N60-A  
600  
Drain-Source Voltage  
VDSS  
8N60-B  
650  
V
Gate-Source Voltage  
VGSS  
IAR  
±30  
V
Avalanche Current (Note 2)  
7.5  
A
Continuous  
ID  
7.5  
A
Drain Current  
Pulsed (Note 2)  
Single Pulsed (Note 3)  
Repetitive (Note 2)  
IDM  
30  
A
EAS  
EAR  
dv/dt  
230  
mJ  
mJ  
V/ns  
W
Avalanche Energy  
14.7  
Peak Diode Recovery dv/dt (Note 4)  
4.5  
TO-220/TO-262  
TO-220F/TO-220F1  
147  
Power Dissipation  
PD  
48  
W
Junction Temperature  
Operating Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
-55 ~ +150  
°C  
°C  
°C  
TOPR  
TSTG  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating : Pulse width limited by TJ  
3. L = 7.3mH, IAS = 7.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C  
4. ISD ≤7.5A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
RATING  
62.5  
UNIT  
°C/W  
°C/W  
°C/W  
°C/W  
TO-220/TO-262  
Junction to Ambient  
Junction to Case  
θJA  
TO-220F/TO-220F1  
TO-220/TO-262  
62.5  
0.85  
θJC  
TO-220F/TO-220F1  
2.6  
„
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
8N60-A  
8N60-B  
600  
650  
V
V
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
BVDSS  
IDSS  
VGS = 0 V, ID = 250 μA  
VDS = 600 V, VGS = 0 V  
VGS = 30 V, VDS = 0 V  
10  
µA  
Forward  
Reverse  
100 nA  
-100 nA  
IGSS  
VGS = -30 V, VDS = 0 V  
Breakdown Voltage Temperature  
Coefficient  
△BVDSS/△T  
J ID = 250 μA, Referenced to 25°C  
0.7  
V/°C  
ON CHARACTERISTICS  
Gate Threshold Voltage  
VGS(TH)  
RDS(ON)  
VDS = VGS, ID = 250 μA  
2.0  
4.0  
1.0 1.2  
V
Static Drain-Source On-State Resistance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
VGS = 10 V, ID = 3.75 A  
Ω
CISS  
COSS  
CRSS  
965 1255 pF  
105 135 pF  
VDS = 25 V, VGS = 0 V, f = 1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
12  
16  
pF  
tD(ON)  
tR  
tD(OFF)  
tF  
16.5 45  
ns  
Turn-On Rise Time  
VDD = 300V, ID = 7.5 A, RG = 25Ω  
(Note 1, 2)  
60.5 130 ns  
81 170 ns  
64.5 140 ns  
Turn-Off Delay Time  
Turn-Off Fall Time  
Total Gate Charge  
QG  
28  
4.5  
12  
36  
nC  
nC  
nC  
V
DS= 480V,ID= 7.5A, VGS= 10 V  
Gate-Source Charge  
QGS  
QGD  
(Note 1, 2)  
Gate-Drain Charge  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 8  
QW-R502-115,D  
www.unisonic.com.tw  
8N60  
Power MOSFET  
„
ELECTRICAL CHARACTERISTICS(Cont.)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
Drain-Source Diode Forward Voltage  
Maximum Continuous Drain-Source Diode  
Forward Current  
VSD  
IS  
VGS = 0 V, IS = 7.5 A  
1.4  
7.5  
V
A
Maximum Pulsed Drain-Source Diode  
Forward Current  
ISM  
30  
A
Reverse Recovery Time  
tRR  
V
GS = 0 V, IS = 7.5 A,  
365  
3.4  
ns  
dIF/dt = 100 A/µs (Note 2)  
Reverse Recovery Charge  
QRR  
µC  
Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%  
2. Essentially independent of operating temperature  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 8  
QW-R502-115,D  
www.unisonic.com.tw  
8N60  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS  
+
D.U.T.  
VDS  
-
+
-
L
RG  
Driver  
VDD  
* dv/dt controlled by RG  
* ISD controlled by pulse period  
* D.U.T.-Device Under Test  
Same Type  
as D.U.T.  
VGS  
Fig. 1A Peak Diode Recovery dv/dt Test Circuit  
P. W.  
Period  
VGS  
(Driver)  
Period  
P.W.  
D=  
10V  
=
VGS  
IFM, Body Diode Forward Current  
ISD  
(D.U.T.)  
di/dt  
IRM  
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
VDS  
VDD  
(D.U.T.)  
Body Diode  
Forward Voltage Drop  
Fig. 1B Peak Diode Recovery dv/dt Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 8  
QW-R502-115,D  
www.unisonic.com.tw  
8N60  
Power MOSFET  
„
TEST CIRCUITS AND WAVEFORMS (Cont.)  
RL  
VDS  
VDS  
90%  
VDD  
VGS  
RG  
10%  
VGS  
D.U.T.  
10V  
tD(ON)  
tD(OFF)  
tF  
tR  
Fig. 2A Switching Test Circuit  
Fig. 2B Switching Waveforms  
VGS  
QG  
10V  
QGS  
QGD  
Charge  
Fig. 3A Gate Charge Test Circuit  
Fig. 3B Gate Charge Waveform  
BVDSS  
IAS  
ID(t)  
VDS(t)  
VDD  
Time  
tp  
Fig. 4A Unclamped Inductive Switching Test Circuit  
Fig. 4B Unclamped Inductive Switching Waveforms  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 8  
QW-R502-115,D  
www.unisonic.com.tw  
8N60  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
On-State Characteristics  
VGS  
Top: 15.0V  
Transfer Characteristics  
100  
10  
10.0V  
8.0V  
7.0V  
10  
150°C  
6.5V  
6.0V  
5.5 V  
25°C  
Bottorm:5.0V  
1
5.0V  
1
0.1  
Notes:  
1. 250µs Pulse Test  
2. TC=25°C  
Notes:  
1. VDS=40V  
2. 250µs Pulse Test  
0.1  
0.1  
1
10  
2
4
6
8
10  
Drain-to-Source Voltage, VDS (V)  
Gate-Source Voltage, VGS (V)  
On-Resistance Variation vs. Drain  
Current and Gate Voltage  
Body Diode Forward Voltage vs. Source  
Current  
6
5
4
TJ=25°C  
10  
150°C  
25°C  
VGS=10V  
3
2
1
VGS=20V  
Notes:  
1. VGS=0V  
2. 250µs Test  
1
0
0.1  
0.2  
0.4 0.6  
0.8  
1.2  
1.0  
1.4  
1.6 1.8  
0
5
10  
15  
20  
Drain Current, ID (A)  
Source-Drain Voltage, VSD (V)  
Capacitance Characteristics  
(Non-Repetitive)  
Gate Charge Characteristics  
12  
ID=8A  
Ciss=Cgs+Cgd (Cds=shorted)  
Coss=Cds+Cgd Crss=Cgd  
1900  
1700  
Ciss  
10  
8
VDS=300V  
VDS=480V  
VDS=120V  
1500  
1300  
1100  
Coss  
6
900  
700  
Crss  
4
2
500  
300  
Notes:  
1. VGS=0V  
2. f = 1MHz  
100  
0
0
20  
Total Gate Charge, QG (nC)  
30  
0
10  
15  
25  
5
0.1  
1
10  
Drain-SourceVoltage, VDS (V)  
UNISONIC TECHNOLOGIES CO., LTD  
6 of 8  
QW-R502-115,D  
www.unisonic.com.tw  
8N60  
Power MOSFET  
„
TYPICAL CHARACTERISTICS(Cont.)  
Breakdown Voltage Variation vs.  
Temperature  
On-Resistance Junction Temperature  
3.0  
2.5  
2.0  
1.2  
1.1  
1.0  
1.5  
1.0  
0.5  
0.0  
0.9  
0.8  
Note:  
1. VGS=10V  
2. ID=4A  
Note:  
1. VGS=0V  
2. ID=250µA  
0
200  
-50  
0
-100  
50  
100 150 200  
-100 -50  
50  
100 150  
Junction Temperature, TJ (°C)  
Junction Temperature, TJ (°C)  
Maximum Drain Current vs. Case  
Temperature  
Maximum Safe Operating Area  
100  
10  
10  
8
Operation in This Area is Limited by RDS(on)  
100µs  
100µs  
1ms  
6
10ms  
DC  
4
1
Notes:  
2
0
1. TJ=25°C  
2. TJ=150°C  
3. Single Pulse  
0.1  
1
10  
100  
25  
50  
75  
100  
125  
150  
1000  
Drain-Source Voltage, VDS (V)  
Case Temperature, TC (°C)  
Transient Thermal Response Curve  
D=0.5  
1
D=0.2  
D=0.1  
0.1  
D=0.05  
0.02  
0.01  
Notes:  
1. θJC (t) = 0.85°C/W Max.  
Single pulse  
2. Duty Factor, D=t1/t2  
3. TJM-TC=PDM×θJC (t)  
0.01  
10-4 10-3 10-2 10-1 100  
101  
10-5  
Square Wave Pulse Duration, t1 (sec)  
UNISONIC TECHNOLOGIES CO., LTD  
7 of 8  
QW-R502-115,D  
www.unisonic.com.tw  
8N60  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
8 of 8  
QW-R502-115,D  
www.unisonic.com.tw  
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