INCHANGE Semiconductor
isc Product Specification
isc N-Channel Mosfet Transistor
8N60
·FEATURES
·Drain Current –ID= 7.5A@ TC=25℃
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.2Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VDSS
VGS
ID
PARAMETER
VALUE
600
UNIT
V
Drain-Source Voltage
Gate-Source Voltage-Continuous
Drain Current-Continuous
±20
7.5
V
A
IDM
Drain Current-Single Plused
Total Dissipation @TC=25℃
Max. Operating Junction Temperature
Storage Temperature
30
A
PD
147
W
℃
℃
150
Tj
-55~150
Tstg
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
0.85
62.5
UNIT
℃/W
℃/W
Rth j-c
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Rth j-a
isc Website：www.iscsemi.cn
