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UZHB6790

型号:

UZHB6790

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

8 页

PDF大小:

190 K

SM-8 BIPOLAR TRANSISTOR H-BRIDGE  
ZHB6790  
PRELIMINARY DATA SHEET ISSUE B JULY 1997  
FEATURES  
*
*
*
*
*
Compact package  
Low on state losses  
Low drive requirements  
Operates up to 40V supply  
2 Amp continuous rating  
SM-8  
(8 LEAD SOT223)  
PARTMARKING DETAIL – ZHB6790  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
NPNs  
PNPs  
-50  
-40  
-5  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
50  
40  
5
V
V
Peak Pulse Current  
6
-6  
A
Continuous Collector Current  
IC  
2
-2  
A
Operating and Storage Temperature Range Tj:Tstg  
-55 to +150  
°C  
SCHEMATIC DIAGRAM  
CONNECTION DIAGRAM  
E1, E4  
C1,C2  
B1  
B2  
E1,E4  
C3,C4  
B4  
B1  
B2  
B4  
Q1  
Q2  
Q4  
E2,E3  
B3  
C1, C2  
C3, C4  
B3  
Q3  
E2, E3  
ZHB6790  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
Ptot  
VALUE  
UNIT  
Total Power Dissipation at Tamb = 25°C*  
Any single transistor “on”  
Q1 and Q3 “on” or Q2 and Q4 “on” equally  
1.25  
2
W
W
Derate above 25°C*  
Any single transistor “on”  
Q1 and Q3 “on” or Q2 and Q4 “on” equally  
10  
16  
mW/ °C  
mW/ °C  
Thermal Resistance - Junction to Ambient*  
Any single transistor “on”  
Q1 and Q3 “on” or Q2 and Q4 “on” equally  
100  
62.5  
°C/ W  
°C/ W  
100  
80  
60  
40  
20  
0
60  
50  
40  
30  
20  
10  
0
100us 1ms 10ms 100ms 1s  
Pulse Width  
10s  
100s  
100us 1ms 10ms 100ms 1s  
Pulse Width  
10s  
100s  
Transient Thermal Resistance  
Q1 and Q3 or Q2 and Q4 "On"  
Transient Thermal Resistance  
Single Transistor "On"  
10  
2.0  
1.5  
1.0  
0.5  
0
1
0.1  
1
10  
0.1  
0
20  
40  
60  
T - Temperature (°C)  
80 100 120 140 160  
Pcb Area (inches squared)  
Pd v Pcb Area Comparison  
Derating curve  
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB  
with copper equal to 2 inches square.  
†"Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs  
rurned on.  
ZHB6790  
PNP TRANSISTORS  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Collector-Base Breakdown V(BR)CBO  
Voltage  
-50  
-40  
-5  
V
V
V
IC=-100µA  
IC=-10mA*  
IE=-100µA  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
Emitter-Base Breakdown  
Voltage  
V(BR)EBO  
Collector Cutoff Current  
Emitter Cutoff Current  
ICBO  
-0.1  
-0.1  
VCB=-30V  
VEB=-4V  
µA  
µA  
IEBO  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-0.14  
-0.25  
-0.45  
-0.75  
V
V
V
V
IC=-100mA, IB=-0.5mA*  
IC=-500mA, IB=-5mA*  
IC=-1A, IB=-10mA*  
IC=-2A, IB=-50mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
-1.0  
V
V
IC=-1A, IB=-10mA*  
IC=-1A, VCE=-2V*  
Base-Emitter  
Turn-On Voltage  
-0.75  
Static Forward Current  
Transfer Ratio  
300  
200  
150  
IC=-100mA, VCE=-2V  
IC=-1A, VCE=-2V*  
IC=-2A, VCE=-2V*  
Transition Frequency  
fT  
100  
MHz IC=-50mA, VCE=-5V  
f=50MHz  
Input Capacitance  
Output Capacitance  
Switching Times  
Cibo  
225  
24  
pF  
pF  
ns  
VEB=-0.5V, f=1MHz  
VCB=-10V, f=1MHz  
IC=-500mA,  
Cobo  
ton  
toff  
35  
600  
IB1= -50mA  
IB2=-50mA, VCC=-10V  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%.  
ZHB6790  
NPN TRANSISTORS  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Collector-Base Breakdown V(BR)CBO  
Voltage  
50  
40  
5
V
V
V
IC=100µA  
IC=10mA*  
IE=100µA  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
Emitter-Base Breakdown  
Voltage  
V(BR)EBO  
Collector Cutoff Current  
Emitter Cutoff Current  
ICBO  
0.1  
0.1  
VCB=35V  
VEB=4V  
µA  
µA  
IEBO  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.1  
V
V
V
V
IC=100mA, IB=0.5mA*  
IC=500mA, IB=2.5mA*  
IC=1A, IB=5mA*  
0.16  
0.5  
0.35  
IC=2A, IB=30mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
0.9  
V
V
IC=1A, IB=10mA*  
IC=1A, VCE=2V*  
Base-Emitter  
Turn-On Voltage  
0.73  
Static Forward Current  
Transfer Ratio  
500  
400  
150  
IC=100mA, VCE=2V*  
IC=1A, VCE=2V*  
IC=2A, VCE=2V*  
Transition Frequency  
fT  
150  
MHz IC=50mA, VCE=5V  
f=50MHz  
Input Capacitance  
Output Capacitance  
Switching Times  
Cibo  
200  
16  
pF  
pF  
ns  
VEB=0.5V, f=1MHz  
VCB=10V, f=1MHz  
IC=500mA, IB!=50mA  
Cobo  
ton  
toff  
33  
1300  
IB2=50mA, VCC=10V  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%.  
ZHB6790  
PNP TRANSISTOR  
TYPICAL CHARACTERISTICS  
I
- Collector Current (Amps)  
I
- Collector Current (Amps)  
VCE(sat) v IC  
VCE(sat) v IC  
I
- Collector Current (Amps)  
I
- Collector Current (Amps)  
hFE v IC  
VBE(sat) v IC  
I
- Collector Current (Amps)  
VBE(on) v IC  
ZHB6790  
NPN TRANSISTOR  
TYPICAL CHARACTERISTICS  
I
- Collector Current (Amps)  
I - Collector Current (Amps)  
VCE(sat) v IC  
VCE(sat) v IC  
I
- Collector Current (Amps)  
I
- Collector Current (Amps)  
hFE v IC  
VBE(sat) v IC  
I
- Collector Current (Amps)  
VBE(on) v IC  
ZHB6790  
SAFE OPERATING AREA  
10  
1
10  
1
100m  
10m  
100m  
10m  
100m  
1
10  
100  
100m  
1
10  
100  
VCE - Collector Emitter Voltage (V)  
VCE - Collector Emitter Voltage (V)  
Safe Operating Area (Minimum Copper)  
see note below  
Safe Operating Area (Full Copper)  
see note below  
Note: The Safe OperatingArea (SOA)chartsshownare a combinationoftheworstcase secondary  
breakdown characteristics for the NPN/PNP pair, and the thermal curves demonstrating the  
power dissipation capability of the energised ZHB part (opposing NPN-PNP switched on) when  
mounted on a 50mm x 50mm FR4 PCB. The two cases show:  
i) full copper present and  
ii) with minimal copper present - this being defined as an SM-8 footprint with 1.5mm tracks to  
the edge of the PCB.  
For example, on a 50mm x 50mm full copper PCB, the ZHB6790 will safely dissipate 2W under  
DC conditions, taking note of continuous current ratings and voltage limits. Higher powers can  
be tolerated for pulsed operation, while the shorter pulse widths (100µs and 1ms) being relevant  
for assessment of switching conditions.  
The ZHB6790 ’H’-Bridge can be modelled within SPICE using the following transistor models  
configured in the standard ’H’-Bridge topology, as shown in the schematic diagram ofthisdatasheet.  
ZETEX H Bridge NPN transistors Spice model Last revision 4/7/97  
.MODEL H6790N NPN IS =2.505E-12 NF =1.0058 BF =1360 IKF=1.3 VAF=35  
+ISE=.24E-12 NE =1.38 NR =1.001 BR =125 IKR=1 VAR=8 ISC=.435E-12  
+NC =1.213 RB =.2 RE =.043 RC =.04 CJC=54.3E-12 MJC=.475 VJC=.765  
+CJE=247E-12 TF =.851E-9 TR =15.7E-9  
*
*
*ZETEX H Bridge PNP transistors Spice model Last revision 4/7/97  
.MODEL H6790P PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 VAF=23.5  
+ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30  
+ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12  
+MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9  
*
(C) 1997 ZETEX PLC  
The copyright in these models and the design embodied belong to Zetex PLC (“Zetex”). They are supplied  
free of charge by Zetex for the purpose of research and design and may be used or copied intact (including  
this notice) for that purpose only. All other rights are reserved. The models are believed accurate but no  
condition or warranty as to their merchantability or fitness for purpose is given and no liability in respect of  
any use is accepted by Zetex PLC, its distributors or agents. Zetex PLC, Fields New Road, Chadderton,  
ZHB6790  
He  
E
A
A1  
o
45°  
c
Lp  
Dim  
Millimetres  
Inches  
3
Min Typ Max  
Min  
–
Typ  
Max  
0.067  
0.004  
–
A
A1  
b
–
0.02  
–
–
–
1.7  
0.1  
–
–
0.0008  
–
–
0.7  
–
0.028  
c
0.24  
6.3  
3.3  
–
0.32  
6.7  
3.7  
–
0.009  
0.248  
0.130  
–
–
0.013  
0.264  
0.145  
–
D
–
–
E
–
–
0.180  
0.060  
–
e1  
e2  
He  
Lp  
4.59  
1.53  
–
–
–
–
–
6.7  
0.9  
7.3  
–
0.264  
0.035  
0.287  
–
–
–
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)  
Fax: (44)161 622 4420  
Zetex GmbH  
Zetex Inc.  
Zetex (Asia) Ltd.  
3510 Metroplaza, Tower 2  
Hing Fong Road,  
Kwai Fong, Hong Kong  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
These are supported by  
agents and distributors in  
major countries world-wide  
Zetex plc 1997  
Internet:  
http://www.zetex.com  
Streitfeldstraße 19  
D-81673 München  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
47 Mall Drive, Unit 4  
Commack NY 11725  
USA  
Telephone: (516) 543-7100  
Fax: (516) 864-7630  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied  
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or  
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any  
product or service.  
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