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UZHB6792

型号：

UZHB6792

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

7 页

PDF大小：

100 K

下载PDF手册
SM-8 BIPOLAR TRANSISTOR H-BRIDGE  
ZHB6792  
PRELIMINARY DATA SHEET ISSUE A MAY 1998  
FEATURES  
*
*
*
*
*
Compact package  
Low on state losses  
Low drive requirements  
Operates up to 70V supply  
1 Amp continuous rating  
SM-8  
(8 LEAD SOT223)  
PARTMARKING DETAIL – ZHB6792  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
NPNs  
PNPs  
-70  
-70  
-5  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
70  
70  
5
V
V
Peak Pulse Current  
2
-2  
A
Continuous Collector Current  
IC  
1
-1  
A
Operating and Storage Temperature Range Tj:Tstg  
-55 to +150  
°C  
SCHEMATIC DIAGRAM  
CONNECTION DIAGRAM  
E1, E4  
C1,C2  
B1  
B2  
E1,E4  
C3,C4  
B4  
B1  
B2  
B4  
Q1  
Q2  
Q4  
E2,E3  
B3  
C1, C2  
C3, C4  
B3  
Q3  
E2, E3  
ZHB6792  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
Ptot  
VALUE  
UNIT  
Total Power Dissipation at Tamb = 25°C*  
Any single transistor “on”  
Q1 and Q3 “on” or Q2 and Q4 “on” equally  
1.25  
2
W
W
Derate above 25°C*  
Any single transistor “on”  
10  
16  
mW/ °C  
mW/ °C  
Q1 and Q3 “on” or Q2 and Q4 “on” equally  
Thermal Resistance - Junction to Ambient*  
Any single transistor “on”  
Q1 and Q3 “on” or Q2 and Q4 “on” equally  
100  
62.5  
°C/ W  
°C/ W  
100  
60  
50  
40  
30  
20  
10  
0
D=t1  
t1  
D=t1  
tP  
t1  
tP  
80  
tP  
tP  
60  
D=1  
D=0.5  
40  
D=1  
D=0.2  
D=0.1  
D=0.5  
D=0.2  
D=0.1  
D=0.05  
20  
Single Pulse  
D=0.05  
Single Pulse  
0
100us 1ms 10ms 100ms  
1s  
10s  
100s  
100us 1ms 10ms 100ms  
1s  
10s  
100s  
Pulse Width  
Pulse Width  
Transient Thermal Resistance  
Q1 and Q3 or Q2 and Q4 "On"  
Transient Thermal Resistance  
Single Transistor "On"  
10  
2.0  
1.5  
1.0  
0.5  
0
Dual Transistors †  
Single Transistor  
Full Copper  
1
Dual Transistors †  
Single Transistor  
Minimum  
Copper  
0.1  
1
10  
0.1  
0
20  
40  
60  
80 100 120 140 160  
Pcb Area (inches squared)  
T - Temperature (°C)  
Pd v Pcb Area Comparison  
Derating curve  
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB  
with copper equal to 2 inches square.  
†"Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs  
rurned on.  
ZHB6792  
NPN TRANSISTORS  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C)  
amb  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS.  
BreakdownVoltages  
V(BR)CBO 70  
V(BR)CEO 70  
V
IC=100µA  
IC=10mA*  
IE=100µA  
VCB=55V  
VEB=4V  
V
V(BR)EBO  
ICBO  
5
V
Cut-Off Currents  
0.1  
0.1  
µA  
µA  
IEBO  
Saturation Voltages  
VCE(sat)  
0.15  
0.5  
V
V
IC=0.1A, IB=0.5mA*  
IC=1A, IB=10mA*  
VBE(sat)  
VBE(on)  
0.9  
0.9  
V
V
IC=1A, IB=10mA*  
IC=1A, VCE=2V*  
Base-Emitter  
Turn-On Voltage  
Static Forward Current  
Transfer Ratio  
hFE  
500  
400  
150  
IC=100mA,VCE=2V*  
IC=500mA, VCE =2V*  
IC=1A,VCE=2V*  
Transition Frequency  
Input Capacitance  
Output Capacitance  
Switching Times  
fT  
150  
MHz IC=50mA, VCE=5V, f=50MHz  
Cibo  
Cobo  
200  
12  
pF  
pF  
VEB=0.5V, f=1MHz  
VCB=10V, f=1MHz  
IC=500mA, IB1=50mA  
ton  
toff  
46  
1440  
ns  
ns  
IB2=50mA, VCC=10V  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
ZHB6792  
PNP TRANSISTORS  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C)  
amb  
PARAMETER  
SYMBOL MIN. TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base Breakdown V(BR)CBO  
Voltage  
-75  
-70  
-5  
V
V
V
IC=-100µA  
IC=-10mA*  
IE=-100µA  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
Emitter-Base Breakdown  
Voltage  
V(BR)EBO  
Collector Cut-Off Current  
Emitter Cut-Off Current  
ICBO  
-0.1  
-0.1  
VCB=-40V  
VEB=-4V  
µA  
µA  
IEBO  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-0.45  
-0.5  
V
V
IC=-500mA, IB=-5mA*  
IC=-1A, IB=-25mA*  
Base-Emitter  
VBE(sat)  
VBE(on)  
hFE  
-0.95  
V
IC=-1A, IB=-25mA*  
Saturation Voltage  
Base-Emitter  
Turn-On Voltage  
-0.75  
V
IC=-1A, VCE=-2V*  
Static Forward Current  
Transfer  
300  
250  
200  
800  
IC=-10mA, VCE=-2V*  
IC=-500mA, VCE=-2V*  
IC=-1A, VCE=-2V*  
Transition Frequency  
fT  
100  
MHz  
IC=-50mA, VCE=-5V  
f=50MHz  
Input Capacitance  
Output Capacitance  
Switching Times  
Cibo  
225  
22  
pF  
pF  
VEB=-0.5V, f=1MHz  
VCB=-10V, f=1MHz  
IC=-500mA,  
Cobo  
ton  
toff  
35  
750  
ns  
ns  
I
I
B1=-50mA  
B2=-50mA, VCC=-10V  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
ZHB6792  
PNP TRANSISTOR  
TYPICAL CHARACTERISTICS  
1.8  
1.6  
1.4  
1.2  
1.8  
IC/IB=40  
IC/IB=20  
IC/IB=10  
-55°C  
+25°C  
+100°C  
+175°C  
Tamb=25°C  
IC/IB=100  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0.2  
0
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
C
Collector Current (Amps)  
C
Collector Current (Amps)  
I -  
I
-
VCE(sat) v IC  
VCE(sat) v IC  
+100°C  
+25°C  
-55°C  
-55°C  
+25°C  
+100°C  
+175°C  
VCE=2V  
IC/IB=40  
1.6  
1.6  
1.4  
1.2  
750  
500  
250  
1.4  
1.2  
1.0  
0.8  
1.0  
0.8  
0.6  
0.4  
0.6  
0.4  
0.2  
0.2  
0
0
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
IC - Collector Current (Amps)  
IC - Collector Current (Amps)  
hFE v IC  
VBE(sat) v IC  
-55°C  
+25°C  
+100°C  
VCE=2V  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0.01  
0.1  
1
10  
C
I
-
Collector Current (Amps)  
VBE(on) v IC  
ZHB6792  
NPN TRANSISTOR  
TYPICAL CHARACTERISTICS  
IC/IB=200  
IC/IB=100  
IC/IB=10  
-55°C  
+25°C  
+100°C  
+175°C  
Tamb=25°C  
IC/IB=100  
0.8  
0.6  
0.4  
0.8  
0.6  
0.4  
0.2  
0
0.2  
0
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
C
I
C
I - Collector Current (Amps)  
- Collector Current (Amps)  
VCE(sat) v IC  
VCE(sat) v IC  
+100°C  
+25°C  
VCE=2V  
-55°C  
+25°C  
1.6  
IC/IB=100  
1.6  
1.4  
1.2  
1.5K  
1K  
-55°C  
+100°C  
+175°C  
1.4  
1.2  
1.0  
0.8  
1.0  
0.8  
0.6  
0.4  
0.2  
0.6  
0.4  
0.2  
500  
0
0
0.01  
0.1  
1
10  
0
0.01  
0.1  
1
10  
C
I
Collector Current (Amps)  
C
Collector Current (Amps)  
I -  
-
hFE v IC  
VBE(sat) v IC  
-55°C  
+25°C  
VCE=2V  
1.6  
+100°C  
+175°C  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0
0.01  
0.1  
1
10  
C
I
-
Collector Current (Amps)  
BE(on)  
V
C
v I  
ZHB6792  
He  
E
A
A1  
o
45°  
c
Lp  
Dim  
Millimetres  
Min Typ Max  
Inches  
3
Min  
–
Typ  
Max  
0.067  
0.004  
–
A
A1  
b
–
0.02  
–
–
–
1.7  
0.1  
–
–
0.0008  
–
–
0.7  
–
0.028  
c
0.24  
6.3  
3.3  
–
0.32  
6.7  
3.7  
–
0.009  
0.248  
0.130  
–
–
0.013  
0.264  
0.145  
–
D
–
–
E
–
–
0.180  
0.060  
–
e1  
e2  
He  
Lp  
4.59  
1.53  
–
–
–
–
–
6.7  
0.9  
7.3  
–
0.264  
0.035  
0.287  
–
–
–
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)  
Fax: (44)161 622 4420  
Zetex GmbH  
Zetex Inc.  
Zetex (Asia) Ltd.  
3510 Metroplaza, Tower 2  
Hing Fong Road,  
Kwai Fong, Hong Kong  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
These are supported by  
agents and distributors in  
major countries world-wide  
Zetex plc 1998  
Streitfeldstraße 19  
D-81673 München  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
47 Mall Drive, Unit 4  
Commack NY 11725  
USA  
Telephone: (516) 543-7100  
Fax: (516) 864-7630  
Internet:http://www.zetex.com  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied  
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or  
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any  
product or service.  
厂商 型号 描述 页数 下载

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