SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE ”SuperBAT”
ZHCS1006
ISSUE 1 - NOVEMBER 1997
✪
FEATURES:
1
•
High current capability
C
•
Low VF
2
1
APPLICATIONS:
•
Mobile telecomms, PCMIA & SCSI
•
DC-DC Conversion
A
3
PARTMARKING DETAILS : S16
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VR
VALUE
UNIT
V
Continuous Reverse Voltage
Forward Current
60
900
600
1600
IF
mA
mV
mA
Forward Voltage @ IF = 1000mA(typ)
Average Peak Forward Current;D.C.= 50%
VF
IFAV
IFSM
12
5
A
A
Non Repetitive Forward Current t≤100µs
t≤10ms
Power Dissipation at Tamb= 25° C
Storage Temperature Range
Junction Temperature
Ptot
Tstg
Tj
500
-55 to + 150
125
mW
° C
° C
ELECTRICAL CHARACTERISTICS (at T
= 25° C unless otherwise stated).
amb
PARAMETER
SYMBOL
V(BR)R
MIN.
60
TYP.
80
MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
V
IR= 300µA
Forward Voltage
VF
245
275
330
395
455
510
620
280
320
390
470
530
600
740
mV
mV
mV
mV
mV
mV
mV
IF= 50mA*
IF= 100mA*
IF= 250mA*
IF= 500mA*
IF= 750mA*
IF= 1000mA*
IF= 1500mA*
Reverse Current
IR
50
100
VR= 45V
µA
pF
ns
Diode Capacitance
CD
trr
17
12
f= 1MHz,VR= 25V
Reverse Recovery
Time
switched from
IF = 500mA to IR =
500mA
Measured at IR = 50mA
*Measured under pulsed conditions. Pulse width= 300µs. Duty cycle ≤2%
