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UZUMT717

型号：

UZUMT717

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

3 页

PDF大小：

126 K

下载PDF手册
Super323 SOT323 PNP SILICON POWER  
(SWITCHING) TRANSISTOR  
ZUMT717  
ISSUE 1 - SEPTEMBER 1998  
FEATURES  
*
*
*
*
*
*
500mW POWER DISSIPATION  
IC CONT 1.5A  
3A Peak Pulse Current  
Excellent HFE Characteristics Up To 3A (pulsed)  
Extremely Low Saturation Voltage  
Extremely Low Equivalent On Resistance; RCE(sat)  
APPLICATIONS  
*
*
*
Negative boost functions in DC-DC converters  
Supply line switching in mobile phones and pagers  
Motor drivers in camcorders and mini disk players  
DEVICE TYPE  
ZUMT717  
COMPLEMENT  
ZUMT617  
PARTMARKING  
T71  
RCE(sat)  
150mΩat 1.25A  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VALUE  
-12  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current**  
Continuous Collector Current  
Base Current  
VCBO  
VCEO  
VEBO  
ICM  
IC  
-12  
V
-5  
V
-3  
A
-1.25  
-200  
A
IB  
mA  
mW  
Power Dissipation at Tamb=25°C*  
Ptot  
385 †  
500 ‡  
Operating and Storage Temperature Tj:Tstg  
Range  
-55 to +150  
°C  
†
‡
Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).  
Maximum power dissipation is calculated assuming that the device is mounted on FR4  
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.  
ZUMT717  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
V(BR)CBO  
MIN. TYP. MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
-12  
-12  
-5  
V
IC= -100µA  
IC= -10mA*  
IE= -100µA  
VCB=-10V  
VEB=-4V  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
V
Emitter-Base  
Breakdown Voltage  
V
Collector Cut-Off  
Current  
-10  
-10  
-10  
nA  
nA  
nA  
Emitter Cut-Off  
Current  
IEBO  
Collector Emitter  
Cut-Off Current  
ICES  
VCES=-10V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-25  
-40  
mV  
mV  
mV  
mV  
mV  
IC= -0.1A, IB= -10mA*  
IC= -0.25A, IB=-10 mA*  
IC= -0.5A, IB=-10 mA*  
IC= -1A, IB= -50mA*  
-55  
-100  
-175  
-215  
-240  
-110  
-160  
-185  
IC= -1.25A, IB= -100mA*  
Base-Emitter  
VBE(sat)  
VBE(on)  
hFE  
-990  
-1100 mV  
IC= -1.25A, IB= -100mA*  
Saturation Voltage  
Base-Emitter  
Turn-On Voltage  
-850  
-1000 mV  
I = -1.25A, VCE= 2V*  
C
Static Forward  
Current Transfer  
Ratio  
300  
300  
200  
125  
75  
490  
450  
340  
250  
140  
80  
IC= -10mA, VCE=-2V*  
IC= -0.1A, VCE= -2V*  
IC= -0.5A, VCE= -2V*  
IC= -1.25A, VCE=-2V*  
IC= -2A, VCE= -2V*  
IC= -3A, VCE= -2V*  
30  
Transition  
Frequency  
fT  
220  
MHz IC= -50mA, VCE=-10 V  
f= 100MHz  
Output Capacitance Cobo  
15  
pF  
ns  
ns  
VCB= -10V, f=1MHz  
VCC= -10V, IC=-1A  
Turn-On Time  
Turn-Off Time  
t(on)  
t(off)  
50  
IB1=IB2=-100mA  
135  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%  
ZUMT717  
TYPICAL CHARACTERISTICS  
0.4  
0.3  
0.2  
0.1  
0
0.4  
+25°C  
IC/IB=50  
0.3  
IC/IB=10  
IC/IB=50  
IC/IB=100  
-55°C  
+25°C  
+100°C  
+150°C  
0.2  
0.1  
0
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
IC - Collector Current (A)  
VCE(sat) v IC  
VCE(sat) v IC  
800  
600  
400  
200  
0
1.0  
0.8  
0.6  
0.4  
0.2  
0
IC/IB=50  
VCE=2V  
+100°C  
+25°C  
-55°C  
-55°C  
+25°C  
+100°C  
+150°C  
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
IC - Collector Current (A)  
hFE v IC  
VBE(sat) v IC  
10  
1
1.0  
0.8  
0.6  
0.4  
0.2  
0
DC  
1s  
100ms  
10ms  
1ms  
-55°C  
+25°C  
+100°C  
+150°C  
100m  
10m  
100µs  
100m  
1
10  
100  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
VCE - Collector Emitter Voltage (V)  
VBE(on) v IC  
Safe Operating Area  
厂商 型号 描述 页数 下载

ZETEX

 		UZUMT617 [ Small Signal Bipolar Transistor, 1.5A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN ] 3 页

DIODES

 		UZUMT617TC [ Small Signal Bipolar Transistor, 1.5A I(C), 1-Element, NPN, Silicon ] 3 页

DIODES

 		UZUMT618 [ Small Signal Bipolar Transistor, 1.25A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN ] 3 页

DIODES

 		UZUMT618TA [ Small Signal Bipolar Transistor, 1.25A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon ] 3 页

ZETEX

 		UZUMT618TA [ Small Signal Bipolar Transistor, 1.25A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon ] 3 页

DIODES

 		UZUMT618TC [ Small Signal Bipolar Transistor, 1.25A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon ] 3 页

ZETEX

 		UZUMT619 [ Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN ] 3 页

DIODES

 		UZUMT619TA [ Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon ] 3 页

DIODES

 		UZUMT619TC [ Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon ] 3 页

DIODES

 		UZUMT717TA [ Small Signal Bipolar Transistor, 1.25A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon ] 3 页

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