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UZUMT619

型号：

UZUMT619

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

3 页

PDF大小：

122 K

下载PDF手册
Super323 SOT323 NPN SILICON POWER  
ZUMT619  
(SWITCHING) TRANSISTOR  
ISSUE 1 - SEPTEMBER 1998  
FEATURES  
*
*
*
*
*
500mW POWER DISSIPATION  
IC CONT 1A  
2A Peak Pulse Current  
Excellent HFE Characteristics Up To 2A (pulsed)  
Extremely Low Equivalent On Resistance; RCE(sat)  
APPLICATIONS  
*
*
LCD backlighting inverter circuits  
Boost functions in DC-DC converters  
DEVICE TYPE  
ZUMT619  
COMPLEMENT  
ZUMT720  
PARTMARKING  
T63  
RCE(sat)  
160mΩ at 1A  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
50  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current**  
Continuous Collector Current  
Base Current  
50  
V
5
V
2
A
IC  
1.0  
200  
A
IB  
mA  
mW  
Power Dissipation at Tamb=25°C  
Ptot  
385 †  
500 ‡  
Operating and Storage Temperature Tj:Tstg  
Range  
-55 to +150  
°C  
†
‡
Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).  
Maximum power dissipation is calculated assuming that the device is mounted on FR4  
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.  
ZUMT619  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
V(BR)CBO  
MIN. TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
50  
V
IC= 100µA  
IC= 10mA*  
IE= 100µA  
VCB= 40V  
VEB= 4V  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
50  
5
V
Emitter-Base  
Breakdown Voltage  
V
Collector Cut-Off  
Current  
10  
10  
10  
nA  
nA  
nA  
Emitter Cut-Off  
Current  
IEBO  
Collector Emitter  
Cut-Off Current  
ICES  
VCES= 40V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
24  
35  
mV  
mV  
mV  
mV  
IC= 100mA, IB= 10mA*  
IC= 250mA, IB= 10mA*  
IC= 500mA, IB= 10mA*  
IC= 1A, IB= 50mA*  
60  
80  
120  
160  
200  
270  
Base-Emitter  
VBE(sat)  
VBE(on)  
hFE  
940  
1100 mV  
IC= 1A, IB= 50mA*  
Saturation Voltage  
Base-Emitter  
Turn-On Voltage  
850  
1100 mV  
I = 1A, VCE= 2V*  
C
Static Forward  
Current Transfer  
Ratio  
200  
300  
200  
75  
420  
450  
350  
130  
60  
IC=10mA, VCE= 2V*  
IC= 100mA, VCE=2 V*  
IC= 500mA, VCE=2V*  
IC= 1A, VCE= 2V*  
20  
IC= 1.5A, VCE=2 V*  
Transition  
Frequency  
fT  
215  
MHz  
IC= 50mA, VCE=10V  
f= 100MHz  
Output Capacitance  
Turn-On Time  
Cobo  
t(on)  
t(off)  
615  
150  
425  
pF  
ns  
ns  
VCB= 10V, f=1MHz  
VCC=10 V, IC= 1A  
IB1=IB2=100mA  
Turn-Off Time  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%  
ZUMT619  
TYPICAL CHARACTERISTICS  
0.4  
0.3  
0.2  
0.1  
0
0.4  
+25°C  
IC/IB=50  
0.3  
IC/IB=10  
IC/IB=50  
IC/IB=100  
-55°C  
+25°C  
+100°C  
+150°C  
0.2  
0.1  
0
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
IC - Collector Current (A)  
VCE(sat) v IC  
VCE(sat) v IC  
1.0  
0.8  
0.6  
0.4  
0.2  
0
IC/IB=50  
VCE=2V  
800  
600  
400  
200  
0
+100°C  
+25°C  
-55°C  
-55°C  
+25°C  
+100°C  
+150°C  
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
IC - Collector Current (A)  
hFE v IC  
VBE(sat) v IC  
1.15  
0.9  
10  
1
0.6  
0.3  
0
DC  
1s  
100ms  
10ms  
1ms  
100µs  
100m  
-55°C  
+25°C  
+100°C  
+150°C  
10m  
100m  
1
10  
100  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
VCE - Collector Emitter Voltage (V)  
VBE(on) v IC  
Safe Operating Area  
厂商 型号 描述 页数 下载

ZETEX

 		UZUMT617 [ Small Signal Bipolar Transistor, 1.5A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN ] 3 页

DIODES

 		UZUMT617TC [ Small Signal Bipolar Transistor, 1.5A I(C), 1-Element, NPN, Silicon ] 3 页

DIODES

 		UZUMT618 [ Small Signal Bipolar Transistor, 1.25A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN ] 3 页

DIODES

 		UZUMT618TA [ Small Signal Bipolar Transistor, 1.25A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon ] 3 页

ZETEX

 		UZUMT618TA [ Small Signal Bipolar Transistor, 1.25A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon ] 3 页

DIODES

 		UZUMT618TC [ Small Signal Bipolar Transistor, 1.25A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon ] 3 页

DIODES

 		UZUMT619TA [ Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon ] 3 页

DIODES

 		UZUMT619TC [ Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon ] 3 页

DIODES

 		UZUMT717 [ Small Signal Bipolar Transistor, 1.25A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, SOT-323, 3 PIN ] 3 页

DIODES

 		UZUMT717TA [ Small Signal Bipolar Transistor, 1.25A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon ] 3 页

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