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UZUMT618

型号：

UZUMT618

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

3 页

PDF大小：

117 K

下载PDF手册
Super323 SOT323 NPN SILICON  
ZUMT618  
POWER(SWITCHING) TRANSISTOR  
ISSUE 1 - SEPTEMBER 1998  
FEATURES  
*
*
*
*
*
500mW POWER DISSIPATION  
IC CONT 1.25A  
3A Peak Pulse Current  
Excellent HFE Characteristics Up to 3A (pulsed)  
Extremely Low Equivalent On Resistance; RCE(sat)  
APPLICATIONS  
*
*
*
Corded telecoms.  
Boost functions in DC-DC converters  
Motor driver functions  
DEVICE TYPE  
ZUMT618  
COMPLEMENT  
ZUMT718  
PARTMARKING  
T62  
RCE(sat)  
125mΩ at1.25A  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
20  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current**  
Continuous Collector Current  
Base Current  
20  
V
5
V
4
A
IC  
1.25  
500  
A
IB  
mA  
mW  
Power Dissipation at Tamb=25°C  
Ptot  
385 †  
500 ‡  
Operating and Storage Temperature Tj:Tstg  
Range  
-55 to +150  
°C  
†
‡
Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).  
Maximum power dissipation is calculated assuming that the device is mounted on FR4  
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.  
ZUMT618  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
V(BR)CBO  
MIN. TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
20  
V
IC= 100µA  
IC= 10mA*  
IE= 100µA  
VCB= 16V  
VEB= 4V  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
20  
5
V
Emitter-Base  
Breakdown Voltage  
V
Collector Cut-Off  
Current  
10  
10  
10  
nA  
nA  
nA  
Emitter Cut-Off  
Current  
IEBO  
Collector Emitter  
Cut-Off Current  
ICES  
VCES= 16V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
16.5  
40  
25  
mV  
mV  
mV  
mV  
mV  
IC= 100mA, IB=10mA*  
IC= 250mA, IB= 10mA*  
IC= 500mA, IB=10mA*  
IC= 1A, IB=20mA*  
60  
80  
115  
200  
250  
140  
155  
IC= 1.25A, IB=50mA*  
Base-Emitter  
VBE(sat)  
VBE(on)  
hFE  
955  
1100 mV  
IC= 1.25A, IB=50mA*  
Saturation Voltage  
Base-Emitter  
Turn-On Voltage  
840  
1100 mV  
I = 1.25A, VCE= 2V*  
C
Static Forward  
Current Transfer  
Ratio  
200  
300  
200  
100  
40  
420  
450  
380  
300  
180  
60  
IC= 10mA, VCE= 2V*  
IC= 100mA, VCE= 2V*  
IC= 500mA, VCE=2V*  
IC= 1A, VCE=2 V*  
IC= 2A, VCE=2V*  
IC=4A, VCE= 2V*  
20  
Transition  
Frequency  
fT  
210  
MHz  
IC= 50mA, VCE=10V  
f= 100MHz  
Output Capacitance  
Turn-On Time  
Cobo  
t(on)  
t(off)  
10  
pF  
ns  
ns  
VCB= 10V, f=1MHz  
VCC=10 V, IC=1A  
50  
IB1=IB2=100mA  
Turn-Off Time  
275  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%  
ZUMT618  
TYPICAL CHARACTERISTICS  
0.4  
0.3  
0.2  
0.1  
0
0.4  
+25°C  
IC/IB=50  
0.3  
IC/IB=10  
IC/IB=50  
IC/IB=100  
-55°C  
+25°C  
+100°C  
+150°C  
0.2  
0.1  
0
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
IC - Collector Current (A)  
VCE(sat) v IC  
VCE(sat) v IC  
IC/IB=50  
VCE=2V  
1.0  
0.8  
0.6  
0.4  
600  
400  
200  
0
+100°C  
+25°C  
-55°C  
-55°C  
+25°C  
+100°C  
+150°C  
0.2  
0
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
IC - Collector Current (A)  
hFE v IC  
VBE(sat) v IC  
1.0  
0.8  
0.6  
0.4  
0.2  
0
10  
1
DC  
1s  
100ms  
10ms  
1ms  
-55°C  
+25°C  
+100°C  
100m  
10m  
100µs  
+150°C  
100m  
1
10  
100  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
VCE - Collector Emitter Voltage (V)  
VBE(on) v IC  
Safe Operating Area  
厂商 型号 描述 页数 下载

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DIODES

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DIODES

 		UZUMT618TA [ Small Signal Bipolar Transistor, 1.25A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon ] 3 页

ZETEX

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 		UZUMT618TC [ Small Signal Bipolar Transistor, 1.25A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon ] 3 页

ZETEX

 		UZUMT619 [ Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN ] 3 页

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DIODES

 		UZUMT717 [ Small Signal Bipolar Transistor, 1.25A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, SOT-323, 3 PIN ] 3 页

DIODES

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