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UZUMT617

型号：

UZUMT617

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

3 页

PDF大小：

128 K

下载PDF手册
Super323 SOT323 NPN SILICON POWER  
ZUMT617  
(SWITCHING) TRANSISTOR  
ISSUE 1 - SEPTEMBER 1998  
FEATURES  
*
*
*
*
*
500mW POWER DISSIPATION  
IC CONT 1.5A  
5A Peak Pulse Current  
Excellent HFE Characteristics Up To 5A (pulsed)  
Extremely Low Equivalent On Resistance; RCE(sat)  
APPLICATIONS  
*
*
DC-DC converter boost functions  
Motor drive functions  
DEVICE TYPE  
ZUMT617  
COMPLEMENT  
ZUMT717  
PARTMARKING  
T61  
RCE(sat)  
135mΩ at 1.5A  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VALUE  
15  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current**  
Continuous Collector Current  
Base Current  
VCBO  
VCEO  
VEBO  
ICM  
IC  
15  
V
5
V
5
A
1.5  
200  
A
IB  
mA  
mW  
Power Dissipation at Tamb=25°C*  
Ptot  
385 †  
500 ‡  
Operating and Storage Temperature Tj:Tstg  
Range  
-55 to +150  
°C  
†
‡
Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air).  
Maximum power dissipation is calculated assuming that the device is mounted on FR4  
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.  
ZUMT617  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
V(BR)CBO  
MIN.  
TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
15  
15  
5
V
IC= 100µA  
IC= 10mA*  
IE= 100µA  
VCB= 10V  
VEB= 4V  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
V
Emitter-Base  
Breakdown Voltage  
V
Collector Cut-Off  
Current  
10  
10  
10  
nA  
nA  
nA  
Emitter Cut-Off  
Current  
IEBO  
Collector Emitter  
Cut-Off Current  
ICES  
VCES= 10V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
16.5  
40  
20  
mV  
mV  
mV  
mV  
mV  
IC= 100mA, IB=10mA*  
IC= 250mA, IB= 10mA*  
IC= 500mA, IB=10mA*  
IC= 1A, IB=10mA*  
55  
75  
100  
200  
245  
150  
205  
IC= 1.5A, IB=20mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
930  
1100  
mV  
IC= 1.5A, IB=20mA*  
Base-Emitter Turn-On VBE(on)  
Voltage  
865  
1100  
mV  
I = 1.5A, VCE= 2V*  
C
Static Forward  
Current Transfer  
Ratio  
hFE  
200  
300  
250  
200  
75  
420  
450  
390  
300  
150  
75  
IC= 10mA, VCE= 2V*  
IC= 100mA, VCE= 2V*  
IC= 500mA, VCE=2V*  
IC= 1A, VCE=2 V*  
IC= 3A, VCE=2V*  
30  
IC=5A, VCE= 2V*  
Transition  
Frequency  
fT  
180  
MHz  
IC= 50mA, VCE= 10V  
f= 100MHz  
Output Capacitance  
Turn-On Time  
Cobo  
t(on)  
t(off)  
15  
pF  
ns  
ns  
VCB= 10V, f=1MHz  
VCC= 10V, IC= 1A  
50  
IB1=IB2=100mA  
Turn-Off Time  
250  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%  
ZUMT617  
TYPICAL CHARACTERISTICS  
0.4  
0.3  
0.2  
0.1  
0
0.4  
+25°C  
IC/IB=50  
0.3  
IC/IB=10  
IC/IB=50  
IC/IB=100  
-55°C  
+25°C  
+100°C  
+150°C  
0.2  
0.1  
0
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
IC - Collector Current (A)  
VCE(sat) v IC  
VCE(sat) v IC  
800  
600  
400  
200  
0
VCE=2V  
IC/IB=50  
1.0  
0.75  
0.5  
+100°C  
+25°C  
-55°C  
+25°C  
+100°C  
+150°C  
-55°C  
0.25  
0
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
IC - Collector Current (A)  
hFE v IC  
VBE(sat) v IC  
10  
1
1.0  
0.8  
0.6  
0.4  
0.2  
0
DC  
1s  
100ms  
10ms  
1ms  
-55°C  
100m  
+25°C  
+100°C  
+150°C  
100us  
10m  
100m  
1
10  
100  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
VCE - Collector Emitter Voltage (V)  
VBE(on) v IC  
Safe Operating Area  
厂商 型号 描述 页数 下载

DIODES

 		UZUMT617TC [ Small Signal Bipolar Transistor, 1.5A I(C), 1-Element, NPN, Silicon ] 3 页

DIODES

 		UZUMT618 [ Small Signal Bipolar Transistor, 1.25A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN ] 3 页

DIODES

 		UZUMT618TA [ Small Signal Bipolar Transistor, 1.25A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon ] 3 页

ZETEX

 		UZUMT618TA [ Small Signal Bipolar Transistor, 1.25A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon ] 3 页

DIODES

 		UZUMT618TC [ Small Signal Bipolar Transistor, 1.25A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon ] 3 页

ZETEX

 		UZUMT619 [ Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN ] 3 页

DIODES

 		UZUMT619TA [ Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon ] 3 页

DIODES

 		UZUMT619TC [ Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon ] 3 页

DIODES

 		UZUMT717 [ Small Signal Bipolar Transistor, 1.25A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, SOT-323, 3 PIN ] 3 页

DIODES

 		UZUMT717TA [ Small Signal Bipolar Transistor, 1.25A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon ] 3 页

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