8N60-MH
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS=0V, ID=250μA
VDS=600V, VGS=0V
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
600
2.0
V
10
μA
nA
Forward
Reverse
100
Gate- Source Leakage Current
IGSS
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250μA
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
RDS(ON) VGS=10V, ID=4.0A
1.15
Ω
CISS
1020
130
18
pF
pF
pF
Output Capacitance
COSS
CRSS
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
Gate-Source Charge
QG
QGS
QGD
tD(ON)
tR
32
7
nC
nC
nC
ns
ns
ns
ns
VDS=480V, VGS=10V, ID=8A
IG=1mA (Note 1, 2)
Gate-Drain Charge
12
14
20
100
48
Turn-On Delay Time (Note 1)
Turn-On Rise Time
VDS=100V, VGS=10V, ID=8A,
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage (Note 1)
Reverse Recovery Time (Note 1)
IS
ISM
VSD
trr
8
A
A
16
1.4
IS=8A , VGS=0V
IS=8A , VGS=0V
di/dt=100A/μs
V
520
12
ns
μC
Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONICTECHNOLOGIESCO.,LTD
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QW-R205-649.A
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