SMD Type
Transistors
NPN Silicon Transistor
CZT5551
SOT-223
Unit: mm
+0.2
3.50
-0.2
+0.2
6.50
-0.2
+0.2
0.90
-0.2
+0.1
3.00
-0.1
Features
+0.3
7.00
-0.3
4
1 Base
2 Collector
1
2
3
+0.1
0.70
-0.1
3 Emitter
2.9
4.6
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
180
Unit
V
160
V
6
V
Collector Current
600
mA
W
Power Dissipation
PD
2
Operating and Storage Junction Temperature
Thermal Resistance
TJ,Tstg
ÈJA
-65 to 150
62.5
/W
Electrical Characteristics Ta = 25
Symbol
ICBO
Testconditons
Min
Max
Unit
nA
mA
nA
V
VCB=120V
50
50
50
ICBO
VCB=120V, TA=100
VEB=4.0V
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
IC=100ìA
180
160
6.0
IC=1.0mA
V
IE=10ìA
V
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
0.15
0.20
1.00
1.00
V
V
V
V
80
80
hFE
250
30
fT
100
300
6.0
20
MHz
pF
Cob
Cib
hfe
pF
50
200
VCE=5.0V, IC=200ìA, RS=10
Ù,f=10Hz to 15.7kHz
NF
8.0
dB
1
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