SMD Type
TransistIoCrs
Surface Mount PNP Silicon Power Darlington Transistor
KZT127 (CZT127)
SOT-223
Unit: mm
Features
+0.2
3.50
-0.2
+0.2
6.50
-0.2
High current (max. 5A).
Low voltage (max. 100V).
+0.2
0.90
-0.2
+0.1
3.00
-0.1
+0.3
7.00
-0.3
4
1 Base
2 Collector
3 Emitter
4 Collector
1
2
3
+0.1
0.70
-0.1
2.9
4.6
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
-100
Collector-emitter voltage
Emitter-base voltage
-100
V
-5
V
-5
-8
A
Collector current
ICP
A
Base current
IB
-120
2
mA
W
/W
power dissipation
PD
Thermal Resistance.Junction-to-Ambient
Junction temperature
Storage temperature
R
JA
Tj
Tstg
62.5
150
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Collector to emitter breakdown voltage
Collctor cutoff current
Symbol
Testconditons
Min
Typ
Max
Unit
VCEO
ICEO
ICBO
IEBO
IC=-30mA
VCE=-50V
-100
V
-500
-200
-2.0
A
Collector cutoff current
VCB = -100 V
A
Emitter cutoff current
VEB = -5.0 V
m A
IC =- 500 mA; VCE =-3.0 V
IC = -3A; VCE = -3.0V
IC = -3.0A; IB =- 12mA
1000
1000
DC current gain
hFE
Collector to emitter saturation voltage
Base to emitter saturation voltage
Output capacitance
VCE(sat)
-2.0
-4.0
300
V
V
VBE(sat) IC = -5.0A; IB = -20mA
Cob
fT
VCB = -10 V, IE = 0,f=1.0MHz
IC= -3A; VCE =-4V; f = 1.0 MHz
pF
Transition frequency
4.0
MHz
1
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