SMD Type
TransistIoCrs
Surface Mount NPN Silicon Power Darlington Transistor
KZT122 (CZT122)
SOT-223
Unit: mm
+0.2
3.50
-0.2
+0.2
6.50
-0.2
Features
High current (max. 5A).
Low voltage (max. 100V).
+0.2
0.90
-0.2
+0.1
3.00
-0.1
+0.3
7.00
-0.3
4
1 Base
2 Collector
3 Emitter
4 Collector
1
2
3
+0.1
0.70
-0.1
2.9
4.6
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
100
Collector-emitter voltage
Emitter-base voltage
100
V
5
V
5
A
Collector current
ICP
8
120
A
Base current
IB
mA
W
/W
power dissipation
PD
2
Thermal Resistance.Junction-to-Ambient
Junction temperature
Storage temperature
R
JA
Tj
Tstg
62.5
150
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Collector to emitter breakdown voltage
Collctor cutoff current
Symbol
Testconditons
Min
Typ
Max
Unit
VCEO
ICEO
ICBO
IEBO
IC=30mA
100
V
VCE=50V
500
200
2.0
A
Collector cutoff current
VCB = 100 V
VEB = 5.0 V
A
Emitter cutoff current
mA
IC = 500 mA; VCE =3.0 V
IC = 3A; VCE = 3.0V
1000
1000
DC current gain
hFE
Collector to emitter saturation voltage
Base to emitter saturation voltage
Output capacitance
VCE(sat)
IC = 3.0A; IB = 12mA
2.0
4.0
200
V
V
VBE(sat) IC = 5.0A; IB = 20mA
Cob
fT
VCB = 10 V, IE = 0,f=1.0MHz
IC= 3A; VCE =4V; f = 1.0 MHz
pF
Transition frequency
4.0
MHz
1
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