CZT127
SOT-223 Transistor(PNP)
1. BASE
SOT-223
2. COLLECTOR
3. EMITTER
1
Features
Complementary to CZT122
Silicon Power Darlington Transistors
Low speed switching and amplifier applications
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-100
-100
-5
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
Dimensions in inches and (millimeters)
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-5
A
PC
1
W
℃
℃
Tj
150
-65-150
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
ICBO
Test
conditions
MIN
-100
-100
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Base cut-off current
IC=-1m A,IE=0
IC=-30mA,IB=0
V
VCB=-100V,IE=0
VCE=-50V,IB=0
-200
-500
-2
uA
uA
mA
ICEO
Emitter cut-off current
IEBO
VEB=-5V,IC=0
hFE(1)
VCE=-3V,IC=-0.5A
VCE=-3V,IC=-3A
IC=-3A,IB=-12mA
IC=-5A,IB=-20mA
VCE=-3V,IC=-3A
VCE=-4V,IC=-3A,f=1MHz
VCB=-10V, IE=0, f=1.0MHz
1000
1000
DC current gain
hFE(2)
VCE(sat)1
VCE(sat)2
VBE(on)
fT
-2
-4
V
V
Collector-emitter saturation voltage
Base-emitter voltage
-2.5
V
Transition frequency
4
MHz
pF
Collector output capacitance
Cob
200
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Revision:20170701-P1
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