SMD Type
TransistIoCrs
2.0W Surface Mount Complementary
NPN Silicon Power Transistor
KZT3055(CZT3055)
SOT-223
Unit: mm
Features
+0.2
3.50
-0.2
+0.2
6.50
-0.2
High current (max. 6A).
Low voltage (max. 60V).
+0.2
0.90
-0.2
+0.1
3.00
-0.1
+0.3
7.00
-0.3
4
1 Base
2 Collector
1
2
3
+0.1
0.70
-0.1
3 Emitter
2.9
4.6
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector - emitter votage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCER
VCEO
VEBO
IC
Rating
Unit
V
100
70
V
60
V
7
V
Collector current
6
A
Base current
IB
3
2
A
power dissipation
PD
W
/W
Thermal resistance Junction-to-Ambient
Junction temperature
Storage temperature
R
JA
Tj
Tstg
62.5
150
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
60
Typ
Max
Unit
V
Collector to emitter breakdown voltage
Collector to emitter breakdown voltage
VCEO
VCER
ICEO
ICEV
IC=30mA
70
V
IC=30mA,RBE=100
VCE=30V
700
1.0
5.0
70
A
Collctor cutoff current
Emitter cutoff current
DC current gain
VCE=100V,VEB=1.5V
VEB = 7.0 V
mA
m A
IEBO
IC = 4.0A; VCE =4.0 V
IC = 6.0A; VCE = 4.0V
IC = 4.0A; IB =400mA
20
hFE
5.0
Collector to emitter saturation voltage
Base to emitter ON voltage
Transition frequency
VCE(sat)
1.1
1.5
V
V
VBE(on) VCE=4.0V,IC=4.0A
IC= 500mA; VCE =10V; f = 1.0 MHz
fT
2.5
MHz
1
www.kexin.com.cn
