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NYC226STT1G

型号:

NYC226STT1G

描述:

敏感栅硅控整流器[ Sensitive Gate Silicon Controlled Rectifiers ]

品牌:

ONSEMI[ ONSEMI ]

页数:

5 页

PDF大小:

127 K

NYC222STT1G,  
NYC226STT1G,  
NYC228STT1G  
Sensitive Gate  
Silicon Controlled Rectifiers  
http://onsemi.com  
Reverse Blocking Thyristors  
SCRs  
1.5 AMPERES RMS  
400 thru 600 VOLTS  
Designed and tested for repetitive peak operation required for CD  
ignition, fuel ignitors, flash circuits, motor controls and low-power  
switching applications.  
Features  
Blocking Voltage to 600 V  
G
High Surge Current 15 A  
A
K
Very Low Forward “On” Voltage at High Current  
Low-Cost Surface Mount SOT223 Package  
These are PbFree Devices  
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
SOT223  
CASE 318E  
STYLE 11  
AYW  
XXXXXG  
G
Rating  
Symbol  
Value  
Unit  
Peak Repetitive OffState Voltage (Note 1)  
V
V
DRM,  
RRM  
(R = IK, T = *40 to +110°C, Sine Wave,  
V
GK  
J
50 to 60 Hz, Gate Open)  
NYC222  
NYC226  
NYC228  
50  
400  
600  
1
A
Y
W
= Assembly Location  
= Year  
= Work Week  
On-State Current RMS  
(180° Conduction Angles, T = 80°C)  
I
1.5  
A
A
T(RMS)  
C
XXXXX = Device Code  
Peak Non-repetitive Surge Current,  
@T = 25°C, (1/2 Cycle, Sine Wave, 60 Hz)  
I
TSM  
15  
G
= PbFree Package  
(Note: Microdot may be in either loca-  
tion)  
A
2
2
Circuit Fusing Considerations (t = 8.3 ms)  
I t  
0.9  
0.5  
A s  
Forward Peak Gate Power  
(Pulse Width 1.0 msec, T = 25°C)  
P
GM  
W
W
A
PIN ASSIGNMENT  
A
1
2
3
4
K (Cathode)  
Forward Average Gate Power  
(t = 8.3 msec, T = 25°C)  
P
0.1  
0.2  
G(AV)  
FGM  
A
A (Anode)  
G (Gate)  
Forward Peak Gate Current  
I
(Pulse Width 1.0 ms, T = 25°C)  
A
A (Anode)  
Reverse Peak Gate Voltage  
V
RGM  
5.0  
V
(Pulse Width 1.0 ms, T = 25°C)  
A
Operating Junction Temperature Range  
T
40 to +110  
°C  
°C  
ORDERING INFORMATION  
J
@ Rated V  
and V  
RRM  
DRM  
Device  
Package  
Shipping  
Storage Temperature Range  
T
stg  
40 to  
+150  
NYC222STT1G  
SOT223  
(PbFree)  
1000 /Tape & Reel  
1000 /Tape & Reel  
1000 /Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
NYC226STT1G  
NYC228STT1G  
SOT223  
(PbFree)  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply forzeroornegativegatevoltage;however, positivegate voltageshall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
SOT223  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
July, 2008 Rev. 0  
NYC222/D  
 
NYC222STT1G, NYC226STT1G, NYC228STT1G  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
156  
25  
Unit  
°C/W  
°C/W  
°C  
Thermal Resistance, JunctiontoAmbient PCB Mounted  
R
q
JA  
Thermal Resistance, JunctiontoTab Measured on MT2 Tab Adjacent to Epoxy  
R
q
JT  
Maximum Device Temperature for  
T
260  
L
Soldering Purposes for 10 Secs Maximum  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
C
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
Peak Repetitive Forward or Reverse Blocking Current  
I
, I  
DRM RRM  
(V = Rated V  
/V  
; R = 1000 W)  
T = 25°C  
C
C
10  
200  
mA  
mA  
AK  
DRM RRM  
GK  
T
= 110°C  
ON CHARACTERISTICS  
Peak Forward OnState Voltage (Note 2)  
V
TM  
1.2  
1.7  
V
(I = 2.2 A Peak)  
TM  
Gate Trigger Current (dc) (Note 3)  
T
C
= 25°C  
I
30  
200  
500  
mA  
C
GT  
(V = 7 Vdc, R = 100 W)  
T
= 40°C  
AK  
L
Gate Trigger Voltage (dc) (Note 3)  
T
C
= 25°C  
V
0.8  
1.2  
V
V
C
GT  
(V = 7 Vdc, R = 100 W)  
T
= 40°C  
= 110°C  
= 25°C  
AK  
L
Gate NonTrigger Voltage  
(V = V , R = 100 W)  
V
GD  
0.1  
T
C
AK  
DRM  
L
Holding Current  
(V = 12 V, R = 1000 W)  
I
mA  
H
T
C
2.0  
5.0  
10  
AK  
GK  
C
Initiating Current = 200 mA  
DYNAMIC CHARACTERISTICS  
Critical Rate of Rise of OffState Voltage  
T
= 40°C  
dv/dt  
25  
V/ms  
(T = 110°C)  
C
2. Pulse Width =1.0 ms, Duty Cycle v1%.  
3. R Current not included in measurement.  
GK  
Voltage Current Characteristic of SCR  
+ Current  
Anode +  
V
TM  
Symbol  
Parameter  
V
Peak Repetitive Off State Forward Voltage  
Peak Forward Blocking Current  
Peak Repetitive Off State Reverse Voltage  
Peak Reverse Blocking Current  
Peak on State Voltage  
DRM  
DRM  
on state  
I
I
H
I
at V  
RRM  
RRM  
V
RRM  
RRM  
I
V
TM  
+ Voltage  
I
H
Holding Current  
I
at V  
DRM  
Reverse Blocking Region  
(off state)  
DRM  
Forward Blocking Region  
(off state)  
Reverse Avalanche Region  
Anode −  
http://onsemi.com  
2
 
NYC222STT1G, NYC226STT1G, NYC228STT1G  
CURRENT DERATING  
140  
100  
60  
140  
120  
100  
80  
dc  
a = 180°  
a = CONDUCTION  
60  
40  
dc  
ANGLE  
a = 180°  
20  
0
20  
a = CONDUCTION ANGLE  
0.2 0.4  
I , AVERAGE ON‐STATE CURRENT (AMP)  
T(AV)  
0
0
0.2  
0.4  
0.6 0.8  
1.0  
1.2 1.4  
1.6  
1.8  
2.0  
0
0.6  
0.8  
1.0  
I
, AVERAGE ON‐STATE CURRENT (AMPS)  
T(AV)  
Figure 1. Maximum Case Temperature  
Figure 2. Maximum Ambient Temperature  
5.0  
3.0  
2.0  
T = 110°C  
J
25°C  
1.0  
0.7  
0.5  
0.3  
0.2  
0.1  
0.07  
0.05  
0.03  
0.02  
0.01  
0
0.5  
1.0  
1.5  
2.0  
2.5  
V , INSTANTANEOUS ON‐STATE VOLTAGE  
T
(VOLTS)  
Figure 3. Typical Forward Voltage  
http://onsemi.com  
3
NYC222STT1G, NYC226STT1G, NYC228STT1G  
1.0  
0.7  
0.5  
0.3  
0.2  
0.1  
0.07  
0.05  
0.03  
0.02  
0.01  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
500  
1000  
2000  
5000 1000  
t, TIME (ms)  
Figure 4. Thermal Response  
TYPICAL CHARACTERISTICS  
0.8  
0.7  
0.6  
0.5  
100  
V
= 7.0 V  
R = 100  
AK  
50  
L
30  
20  
10  
5.0  
3.0  
2.0  
0.4  
0.3  
1.0  
-40  
-75  
-50  
-25  
0
25  
50  
75  
100 110  
-20  
0
20  
40  
60  
80  
100 110  
T , JUNCTION TEMPERATURE (°C)  
J
T JUNCTION TEMPERATURE (°C)  
J
Figure 5. Typical Gate Trigger Voltage  
Figure 6. Typical Gate Trigger Current  
2.0  
10  
1.8  
1.6  
1.4  
180°  
120  
90°  
°
60°  
V
= 12 V  
AK  
30°  
R = 100 W  
L
5.0  
2.0  
1.0  
1.2  
1.0  
dc  
0.8  
0.6  
0.4  
0.2  
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
20  
T , JUNCTION TEMPERATURE (°C)  
-40  
-20  
0
40  
60  
80  
100 110  
I
, AVERAGE ON‐STATE CURRENT (AMPS)  
T(AV)  
J
Figure 7. Typical Holding Current  
Figure 8. Power Dissipation  
http://onsemi.com  
4
NYC222STT1G, NYC226STT1G, NYC228STT1G  
PACKAGE DIMENSIONS  
SOT223 (TO261)  
CASE 318E04  
ISSUE M  
NOTES:  
ꢀꢁ1. DIMENSIONING AND TOLERANCING PER ANSI  
D
Y14.5M, 1982.  
ꢀꢁ2. CONTROLLING DIMENSION: INCH.  
b1  
MILLIMETERS  
INCHES  
NOM  
0.064  
0.002  
0.030  
0.121  
0.012  
0.256  
0.138  
0.091  
0.037  
0.069  
0.276  
4
2
DIM  
A
A1  
b
b1  
c
D
E
e
e1  
L1  
MIN  
1.50  
0.02  
0.60  
2.90  
0.24  
6.30  
3.30  
2.20  
0.85  
1.50  
6.70  
0°  
NOM  
1.63  
0.06  
0.75  
3.06  
0.29  
6.50  
3.50  
2.30  
0.94  
1.75  
7.00  
MAX  
1.75  
0.10  
0.89  
3.20  
0.35  
6.70  
3.70  
2.40  
1.05  
2.00  
7.30  
10°  
MIN  
0.060  
0.001  
0.024  
0.115  
0.009  
0.249  
0.130  
0.087  
0.033  
0.060  
0.264  
0°  
MAX  
0.068  
0.004  
0.035  
0.126  
0.014  
0.263  
0.145  
0.094  
0.041  
0.078  
0.287  
10°  
H
E
E
1
3
b
e1  
e
H
E
C
q
q
A
STYLE 11:  
0.08 (0003)  
PIN 1. MT 1  
2. MT 2  
3. GATE  
4. MT 2  
A1  
L1  
SOLDERING FOOTPRINT*  
3.8  
0.15  
2.0  
0.079  
6.3  
0.248  
2.3  
0.091  
2.3  
0.091  
2.0  
0.079  
mm  
inches  
1.5  
0.059  
ǒ
Ǔ
SCALE 6:1  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent  
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other  
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,  
affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury  
or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an  
Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81357733850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
MCR226/D  
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