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NYC008-6JG-D

型号:

NYC008-6JG-D

描述:

敏感栅硅控整流器[ Sensitive Gate Silicon Controlled Rectifiers ]

品牌:

ONSEMI[ ONSEMI ]

页数:

7 页

PDF大小:

132 K

NYC008-6JG  
Sensitive Gate  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
PNPN devices designed for high volume, line-powered consumer  
applications such as relay and lamp drivers, small motor controls, gate  
drivers for larger thyristors, and sensing and detection circuits.  
Supplied in an inexpensive plastic TO-226AA package which is  
readily adaptable for use in automatic insertion equipment.  
http://onsemi.com  
SCRs  
0.8 A RMS  
600 V  
Features  
Sensitive Gate Allows Triggering by Microcontrollers and Other  
G
Logic Circuits  
A
K
Blocking Voltage to 600 V  
OnState Current Rating of 0.8 A RMS at 80°C  
High Surge Current Capability 10 A  
Minimum and Maximum Values of IGT, VGT and IH Specified  
for Ease of Design  
Immunity to dV/dt 50 V/msec Minimum at 110°C  
Glass-Passivated Surface for Reliability and Uniformity  
These are PbFree Devices  
TO92  
CASE 29  
STYLE 10  
1
1
2
2
3
3
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
MARKING DIAGRAM  
NYC  
0086  
AYWWG  
G
A
Y
= Assembly Location  
= Year  
WW = Work Week  
G
= PbFree Package  
(Note: Microdot may be in either location)  
PIN ASSIGNMENT  
1
2
3
Cathode  
Gate  
Anode  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 5 of  
this data sheet.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
January, 2010 Rev. 0  
NYC0086JG/D  
NYC0086JG  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Peak Repetitive OffState Voltage (Notes 1 and 2)  
V
DRM,  
600  
V
(T = *40 to 110°C, Sine Wave, 50 to 60 Hz; R = 1 kW)  
V
J
GK  
RRM  
On-State RMS Current, (T = 80°C) 180° Conduction Angles  
I
0.8  
10  
A
A
C
T(RMS)  
Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, T = 25°C)  
I
TSM  
J
2
2
Circuit Fusing Consideration, (t = 8.3 ms)  
I t  
0.415  
0.1  
A s  
P
W
W
A
Forward Peak Gate Power, (T = 25°C, Pulse Width v 1.0 ms)  
GM  
A
Forward Average Gate Power, (T = 25°C, t = 8.3 ms)  
P
0.10  
A
G(AV)  
I
1.0  
Forward Peak Gate Current, (T = 25°C, Pulse Width v 1.0 ms)  
GM  
A
V
5.0  
V
Reverse Peak Gate Voltage, (T = 25°C, Pulse Width v 1.0 ms)  
GRM  
A
Operating Junction Temperature Range @ Rate V  
and V  
T
J
40 to 110  
40 to 150  
°C  
°C  
RRM  
DRM  
Storage Temperature Range  
T
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate  
DRM  
RRM  
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current  
source such that the voltage ratings of the devices are exceeded.  
2. See ordering information for exact device number options.  
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance,JunctiontoCase  
JunctiontoAmbient  
Lead Solder Temperature  
Symbol  
Max  
Unit  
R
q
JC  
75  
200  
°C/W  
R
q
JA  
T
260  
°C  
L
(t1/16from case, 10 secs max)  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Peak Repetitive Forward or Reverse Blocking Current (Note 3)  
I
, I  
mA  
DRM RRM  
T
T
= 25°C  
= 110°C  
10  
100  
C
C
(V = Rated V  
and V  
; R = 1 kW)  
D
DRM  
RRM  
GK  
ON CHARACTERISTICS  
*
Peak Forward OnState Voltage  
V
1.7  
V
mA  
mA  
mA  
V
TM  
(I = 1.0 A Peak @ T = 25°C)  
TM  
A
Gate Trigger Current (Note 4)  
(V = 7.0 Vdc, R = 100 W)  
T
= 25°C  
I
200  
C
GT  
AK  
L
Holding Current (Note 3)  
T
= 25°C  
I
5.0  
10  
C
H
(V = 7.0 Vdc, Initiating Current = 20 mA, R = 1 kW) T = 40°C  
AK  
GK  
C
Latch Current (Note 4)  
(V = 7.0 V, Ig = 200 mA)  
AK  
T
T
= 25°C  
= 40°C  
I
10  
15  
C
C
L
Gate Trigger Voltage (Note 4)  
T
T
= 25°C  
= 40°C  
V
0.8  
1.2  
C
C
GT  
(V = 7.0 Vdc, R = 100 W)  
AK  
L
DYNAMIC CHARACTERISTICS  
Critical Rate of Rise of OffState Voltage  
(V = Rated V , Exponential Waveform, R = 1 kW,T = 110°C)  
dV/dt  
di/dt  
50  
V/ms  
A/ms  
D
DRM  
GK  
J
Critical Rate of Rise of OnState Current  
50  
(I = 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA)  
PK  
*Indicates Pulse Test: Pulse Width 1.0 ms, Duty Cycle 1%.  
3. R = 1000 W included in measurement.  
GK  
4. Does not include R in measurement.  
GK  
http://onsemi.com  
2
 
NYC0086JG  
Voltage Current Characteristic of SCR  
+ Current  
Anode +  
V
TM  
Symbol  
Parameter  
V
Peak Repetitive Off State Forward Voltage  
Peak Forward Blocking Current  
Peak Repetitive Off State Reverse Voltage  
Peak Reverse Blocking Current  
Peak on State Voltage  
DRM  
DRM  
on state  
I
I
H
I
at V  
RRM  
RRM  
V
RRM  
RRM  
I
V
TM  
+ Voltage  
I
H
Holding Current  
I
at V  
DRM  
Reverse Blocking Region  
(off state)  
DRM  
Forward Blocking Region  
(off state)  
Reverse Avalanche Region  
Anode −  
100  
90  
0.85  
0.8  
0.75  
80  
70  
60  
50  
40  
30  
20  
0.7  
0.65  
0.6  
0.55  
0.5  
0.45  
0.4  
0.35  
40 25 10  
5
20 35 50 65 80 95 110  
40 25 10  
5
20 35 50  
65 80 95 110  
T , JUNCTION TEMPERATURE (°C)  
J
T , JUNCTION TEMPERATURE (°C)  
J
Figure 1. Typical Gate Trigger Current versus  
Junction Temperature  
Figure 2. Typical Gate Trigger Voltage versus  
Junction Temperature  
http://onsemi.com  
3
NYC0086JG  
3.0  
2.8  
2.6  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
1.2  
1.0  
40 25 10  
5
20 35 50 65 80 95 110  
40 25 10  
5
20 35 50 65 80 95 110  
T , JUNCTION TEMPERATURE (°C)  
J
T , JUNCTION TEMPERATURE (°C)  
J
Figure 3. Typical Holding Current versus  
Junction Temperature  
Figure 4. Typical Latching Current versus  
Junction Temperature  
120  
110  
10  
MAXIMUM @ T = 25°C  
J
MAXIMUM @ T = 110°C  
J
100  
90  
DC  
1
80  
70  
60  
180°  
50  
40  
30°  
0.2  
60°  
90°  
120°  
0.1  
0
0.1  
0.3  
0.4  
0.5  
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5  
I , RMS ON-STATE CURRENT (AMPS)  
T(RMS)  
V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)  
T
Figure 5. Typical RMS Current Derating  
Figure 6. Typical OnState Characteristics  
http://onsemi.com  
4
NYC0086JG  
ORDERING INFORMATION  
Device  
Package Code  
Shipping  
NYC0086JG  
5000 Units / Box  
TO92 (TO226)  
(PbFree)  
NYC0086JRLRAG  
NYC0086JRLREG  
2000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
5
NYC0086JG  
TO92 EIA RADIAL TAPE IN BOX OR ON REEL  
H2A  
H2A  
H2B  
H2B  
H
W2  
H4  
H5  
T1  
L1  
H1  
W1  
W
L
T
T2  
F1  
F2  
D
P2  
P1  
P2  
P
Figure 7. Device Positioning on Tape  
Specification  
Millimeter  
Inches  
Min  
Max  
Min  
Max  
Symbol  
Item  
D
0.1496  
0.015  
0.0945  
.059  
0.1653  
3.8  
0.38  
2.4  
1.5  
8.5  
0
4.2  
Tape Feedhole Diameter  
D2  
F1, F2  
H
0.020  
0.110  
.156  
0.51  
2.8  
Component Lead Thickness Dimension  
Component Lead Pitch  
4.0  
Bottom of Component to Seating Plane  
Feedhole Location  
H1  
H2A  
H2B  
H4  
H5  
L
0.3346  
0
0.3741  
0.039  
0.051  
0.768  
0.649  
0.433  
9.5  
1.0  
Deflection Left or Right  
0
0
1.0  
Deflection Front or Rear  
0.7086  
0.610  
0.3346  
0.09842  
0.4921  
0.2342  
0.1397  
0.06  
18  
19.5  
16.5  
11  
Feedhole to Bottom of Component  
Feedhole to Seating Plane  
Defective Unit Clipped Dimension  
Lead Wire Enclosure  
15.5  
8.5  
2.5  
12.5  
5.95  
3.55  
0.15  
L1  
P
0.5079  
0.2658  
0.1556  
0.08  
12.9  
6.75  
3.95  
0.20  
1.44  
0.65  
19  
Feedhole Pitch  
P1  
P2  
T
Feedhole Center to Center Lead  
First Lead Spacing Dimension  
Adhesive Tape Thickness  
Overall Taped Package Thickness  
Carrier Strip Thickness  
T1  
0.0567  
0.027  
0.7481  
0.2841  
0.01968  
T2  
0.014  
0.6889  
0.2165  
.0059  
0.35  
17.5  
5.5  
.15  
W
Carrier Strip Width  
W1  
W2  
6.3  
Adhesive Tape Width  
0.5  
Adhesive Tape Position  
NOTES:  
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.  
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.  
3. Component lead to tape adhesion must meet the pull test requirements.  
4. Maximum noncumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.  
5. Hold down tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.  
6. No more than 1 consecutive missing component is permitted.  
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.  
8. Splices will not interfere with the sprocket feed holes.  
http://onsemi.com  
6
NYC0086JG  
PACKAGE DIMENSIONS  
TO92 (TO226)  
CASE 2911  
ISSUE AM  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
A
STRAIGHT LEAD  
BULK PACK  
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND  
BEYOND DIMENSION K MINIMUM.  
P
L
INCHES  
DIM MIN MAX  
MILLIMETERS  
SEATING  
PLANE  
K
MIN  
4.45  
4.32  
3.18  
MAX  
5.20  
5.33  
4.19  
0.533  
1.39  
2.66  
0.50  
---  
A
B
C
D
G
H
J
0.175  
0.170  
0.125  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
---  
0.205  
0.210  
0.165  
0.021 0.407  
D
0.055  
0.105  
0.020  
1.15  
2.42  
0.39  
X X  
G
J
H
V
K
L
--- 12.70  
---  
0.105  
0.100  
---  
6.35  
2.04  
---  
---  
N
P
R
V
2.66  
2.54  
---  
C
SECTION XX  
0.115  
0.135  
2.93  
3.43  
1
N
---  
---  
N
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. CONTOUR OF PACKAGE BEYOND  
DIMENSION R IS UNCONTROLLED.  
A
BENT LEAD  
TAPE & REEL  
AMMO PACK  
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P  
AND BEYOND DIMENSION K MINIMUM.  
P
T
MILLIMETERS  
SEATING  
PLANE  
DIM MIN  
MAX  
5.20  
5.33  
4.19  
0.54  
2.80  
0.50  
---  
K
A
B
C
D
G
J
4.45  
4.32  
3.18  
0.40  
2.40  
0.39  
12.70  
2.04  
1.50  
2.93  
3.43  
D
X X  
G
K
N
P
R
V
J
2.66  
4.00  
---  
V
C
---  
SECTION XX  
1
N
STYLE 10:  
PIN 1. CATHODE  
2. GATE  
3. ANODE  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81357733850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
MCR100/D  
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