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CZT32C

型号:

CZT32C

描述:

2.0W互补硅功率晶体管[ 2.0W COMPLEMENTARY SILICON POWER TRANSISTOR ]

品牌:

CENTRAL[ CENTRAL SEMICONDUCTOR CORP ]

页数:

2 页

PDF大小:

105 K

TM  
Ce n t r a l  
NEW  
CZT31C NPN  
CZT32C PNP  
S e m ic o n d u c t o r Co r p .  
2.0W COMPLEMENTARY SILICON  
POWER TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT31C  
and CZT32C types are surface mount epoxy  
molded complementary silicon transistors  
manufactured by the epitaxial base process,  
designedforsurfacemountedpoweramplifier  
applications up to 3.0 amps.  
POWER TM  
223  
SOT-223 CASE  
o
MAXIMUM RATINGS: (T =25 C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
I
100  
100  
5.0  
3.0  
6.0  
1.0  
2.0  
V
V
CBO  
CEO  
EBO  
V
A
C
Peak Collector Current  
Base Current  
I
A
CM  
I
A
B
Power Dissipation  
P
W
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
T ,T  
J stg  
-65 to +150  
62.5  
C
o
Θ
C/W  
JA  
o
ELECTRICAL CHARACTERISTICS: (T =25 C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
200  
300  
1.0  
UNITS  
µA  
µA  
mA  
V
I
V
V
V
=100V  
=60V  
CES  
CE  
CE  
EB  
I
CEO  
I
=5.0V  
EBO  
BV  
I =30mA  
100  
CEO  
C
* V  
I =3.0A, I =375mA  
1.2  
1.8  
V
CE(SAT)  
C
B
* V  
* h  
V
=4.0V, I =3.0A  
V
BE(ON)  
CE  
CE  
CE  
CE  
C
V
V
V
=4.0V, I =1.0A  
C
25  
10  
FE  
FE  
* h  
=4.0V, I =3.0A  
100  
C
f
=10V, I =500mA, f=1.0MHz  
C
3.0  
MHz  
T
* Pulsed, 2%D.C.  
294  
All dimensions in inches (mm).  
LEAD CODE:  
1) BASE  
2) COLLECTOR  
3) EMITTER  
4) COLLECTOR  
R1  
295  
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