TM
CZT2680
Central
Semiconductor Corp.
SURFACE MOUNT
NPN HIGH VOLTAGE
SILICON SWITCHING
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT2680
NPN High Voltage Switching Power Transistor,
manufactured by the epitaxial planar process,
combines both power and high speed switching
characteristics in a SOT-223 Surface Mount
Package. Typical applications include drivers
and general high voltage switching applications.
MARKING CODE: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
250
200
6.0
1.5
2.0
2.0
V
V
CBO
CEO
EBO
V
I
A
C
Peak Collector Current
Power Dissipation
I
A
CM
P
W
D
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
J stg
-65 to +150
62.5
°C
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
=200V
MIN
TYP
MAX
UNITS
nA
V
I
V
100
CBO
CB
I =100µA
BV
BV
BV
250
200
6.0
435
275
9.0
CBO
C
I =20mA
V
CEO
C
I =100µA
V
EBO
E
V
V
V
V
V
I =100mA, I =10mA
45
150
200
500
1.10
1.20
mV
mV
mV
V
CE(SAT)
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
C
B
I =500mA, I =50mA
95
C
B
I =1.0A, I =150mA
135
0.83
0.95
C
B
I =500mA, I =50mA
C
B
I =1.0A, I =150mA
V
C
B
R2 (17-June 2004)