CZT2680
SURFACE MOUNT
HIGH VOLTAGE
NPN SILICON
SWITCHING POWER TRANSISTOR
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT2680
NPN High Voltage Switching Power Transistor,
manufactured by the epitaxial planar process,
combines both power and high speed switching
characteristics in a SOT-223 Surface Mount Package.
Typical applications include drivers and general high
voltage switching applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
A
Collector-Base Voltage
V
V
V
250
200
V
V
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
6.0
V
Continuous Collector Current
Peak Collector Current
I
1.5
A
C
I
2.0
A
CM
Power Dissipation
P
2.0
W
D
Operating and Storage Junction Temperature
Thermal Resistance
T
T
-65 to +150
62.5
°C
°C/W
J, stg
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
=200V
MIN
TYP
MAX
UNITS
nA
V
I
V
100
CBO
CB
I =100µA
BV
BV
BV
250
200
6.0
435
275
9.0
45
CBO
CEO
C
I =20mA
V
C
I =100µA
V
EBO
E
V
V
V
V
V
I =100mA, I =10mA
150
200
500
1.10
1.20
mV
mV
mV
V
CE(SAT)
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
B
I =500mA, I =50mA
95
C
B
I =1.0A, I =150mA
135
0.83
0.95
105
90
C
B
I =500mA, I =50mA
C
B
I =1.0A, I =150mA
V
C
B
h
h
h
V
=5.0V, I =20mA
40
40
15
50
CE
CE
CE
CE
CB
C
V
V
V
V
=5.0V, I =500mA
FE
C
=5.0V, I =1.0A
47
FE
C
f
=20V, I =100mA, f=1.0MHz
80
MHz
pF
T
C
C
=10V, I =0, f=1.0MHz
30
ob
E
t
t
I =500mA, V =20V, I = I =50mA
0.3
1.0
µs
on
off
C
CC B1 B2
I =500mA, V =20V, I = I =50mA
µs
C
CC B1 B2
R3 (1-March 2010)
