找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

SZMMBZ16VTALT1G

型号:

SZMMBZ16VTALT1G

品牌:

ONSEMI[ ONSEMI ]

页数:

7 页

PDF大小:

74 K

MMBZ16V, SZMMBZ16V  
40 Watt Peak Power  
Zener Transient Voltage  
Suppressors  
SOT−23 Dual Common Anode Zeners  
for ESD Protection  
http://onsemi.com  
These dual monolithic silicon Zener diodes are designed for  
applications requiring transient overvoltage protection capability. They  
are intended for use in voltage and ESD sensitive equipment such as  
computers, printers, business machines, communication systems,  
medical equipment and other applications. Their dual junction common  
anode design protects two separate lines using only one package. These  
devices are ideal for situations where board space is at a premium.  
SOT−23  
CASE 318  
STYLE 12  
Features  
CATHODE 1  
CATHODE 2  
SOT−23 Package Allows Either Two Separate Unidirectional  
3 ANODE  
Configurations or a Single Bidirectional Configuration  
Standard Zener Breakdown Voltage Range − 15.2 V to 16.80 V  
Peak Power − 40 W @ 1.0 ms (Unidirectional),  
MARKING DIAGRAM  
per Figure 5 Waveform  
ESD Rating:  
XXXMG  
− Class 3B (> 16 kV) per the Human Body Model  
− Class C (> 400 V) per the Machine Model  
G
1
ESD Rating of IEC61000−4−2 Level 4, 30 kV Contact Discharge  
Maximum Clamping Voltage @ Peak Pulse Current  
Low Leakage < 5.0 mA  
XXX = Specific Device Code  
M
G
= Date Code  
= Pb−Free Package  
Flammability Rating UL 94 V−0  
(Note: Microdot may be in either location)  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the table on page 2 of this data sheet.  
This is a Pb−Free Device  
Mechanical Characteristics  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
Package designed for optimal automated board assembly  
Small package size for high density applications  
Available in 8 mm Tape and Reel  
Use the Device Number to order the 7 inch/3,000 unit reel.  
Replace the “T1” with “T3” in the Device Number to order the  
13 inch/10,000 unit reel.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
June, 2014 − Rev. 0  
MMBZ16VAL/D  
MMBZ16V, SZMMBZ16V  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Power Dissipation @ 1.0 ms (Note 1)  
P
pk  
40  
W
Total Power Dissipation on FR−5 Board (Note 2)  
°P °  
D
@ T = 25°C  
225  
1.8  
mW°  
mW/°C  
A
Derate above 25°C  
Thermal Resistance Junction−to−Ambient  
R
556  
°C/W  
q
JA  
Total Power Dissipation on Alumina Substrate (Note 3)  
°P °  
D
@ T = 25°C  
300  
2.4  
°mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance Junction−to−Ambient  
Junction and Storage Temperature Range  
Lead Solder Temperature − Maximum (10 Second Duration)  
R
417  
− 55 to +150  
260  
°C/W  
°C  
q
JA  
T , T  
J
stg  
T
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Non−repetitive current pulse per Figure 5 and derate above T = 25°C per Figure 6.  
A
2. FR−5 = 1.0 x 0.75 x 0.62 in.  
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.  
*Other voltages may be available upon request.  
ORDERING INFORMATION  
Device  
MMBZ16VALT1G  
Marking  
16A  
Package  
Shipping  
SZMMBZ16VALT1G*  
MMBZ16VTALT1G  
16A  
SOT−23  
(Pb−Free)  
3,000 / Tape & Reel  
16T  
SZMMBZ16VTALT1G*  
16T  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP  
Capable.  
http://onsemi.com  
2
 
MMBZ16V, SZMMBZ16V  
ELECTRICAL CHARACTERISTICS  
(T = 25°C unless otherwise noted)  
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)  
Symbol  
Parameter  
I
I
PP  
Maximum Reverse Peak Pulse Current  
I
F
V
C
Clamping Voltage @ I  
PP  
V
RWM  
Working Peak Reverse Voltage  
I
R
Maximum Reverse Leakage Current @ V  
RWM  
V
Breakdown Voltage @ I  
V
C
V
V
BR  
T
BR RWM  
V
I
V
F
R
T
I
Test Current  
T
I
QV  
Maximum Temperature Coefficient of V  
BR  
BR  
I
F
Forward Current  
V
Forward Voltage @ I  
F
F
I
PP  
Z
ZT  
Maximum Zener Impedance @ I  
Reverse Current  
ZT  
I
ZK  
Uni−Directional TVS  
Z
ZK  
Maximum Zener Impedance @ I  
ZK  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)  
(V = 0.9 V Max @ I = 10 mA) (5% Tolerance) 40 WATTS  
F
F
Breakdown Voltage  
V
V
@ I (Note 5)  
C
PP  
I
V
@
R
V
(Note 4) (V)  
@ I  
I
PP  
V
QV  
RWM  
BR  
T
C
RWM  
BR  
Device  
Marking Volts  
nA  
Min  
15.20  
Nom  
Max  
mA  
V
A
mV/5C  
13.8  
Device*  
MMBZ16VALT1G  
16A 13  
50  
16  
16.80  
1.0  
23  
1.7  
(V = 0.9 V Max @ I = 10 mA) (2% Tolerance) 40 WATTS  
F
F
Breakdown Voltage  
V
V
@ I (Note 5)  
C
PP  
I
V
@
R
V
(Note 4) (V)  
@ I  
I
PP  
V
QV  
RWM  
BR  
T
C
RWM  
BR  
Device  
Marking Volts  
nA  
Min  
15.68  
Nom  
Max  
mA  
V
A
mV/5C  
13.8  
Device*  
MMBZ16VTALT1G  
16T 13  
50  
16  
16.32  
1.0  
23  
1.7  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
4. V measured at pulse test current I at an ambient temperature of 25°C.  
BR  
T
5. Surge current waveform per Figure 5 and derate per Figure 6  
* Include SZ-prefix devices where applicable.  
http://onsemi.com  
3
 
MMBZ16V, SZMMBZ16V  
TYPICAL CHARACTERISTICS  
21  
18  
1000  
100  
10  
15  
12  
9
6
1
0.1  
3
0
0.01  
40  
0
+50  
+100  
+150  
40  
+25  
+85  
+125  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 1. Typical Breakdown Voltage  
versus Temperature  
Figure 2. Typical Leakage Current  
versus Temperature  
(Upper curve is for bidirectional mode, lower curve is for  
unidirectional mode)  
300  
90  
80  
70  
60  
50  
40  
30  
20  
250  
200  
ALUMINA SUBSTRATE  
150  
100  
50  
FR−5 BOARD  
10  
0
0
0
25  
50  
75  
100  
125  
150  
175  
0
1
2
3
TEMPERATURE (°C)  
BIAS (V)  
Figure 3. Typical Capacitance versus Bias Voltage  
(Upper curve is for unidirectional mode, lower curve is for  
bidirectional mode)  
Figure 4. Steady State Power Derating Curve  
http://onsemi.com  
4
MMBZ16V, SZMMBZ16V  
TYPICAL CHARACTERISTICS  
100  
PULSE WIDTH (t ) IS DEFINED  
P
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
AS THAT POINT WHERE THE  
PEAK CURRENT DECAYS TO  
t 10 ms  
r
50% OF I .  
PP  
100  
PEAK VALUE − I  
PP  
I
PP  
HALF VALUE −  
2
50  
0
t
P
0
1
2
3
4
0
25  
50  
75  
100  
125  
150 175 200  
t, TIME (ms)  
T , AMBIENT TEMPERATURE (°C)  
A
Figure 5. Pulse Waveform  
Figure 6. Pulse Derating Curve  
100  
100  
10  
1
RECTANGULAR  
WAVEFORM, T = 25°C  
RECTANGULAR  
WAVEFORM, T = 25°C  
A
A
BIDIRECTIONAL  
BIDIRECTIONAL  
10  
UNIDIRECTIONAL  
UNIDIRECTIONAL  
1
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
1000  
PW, PULSE WIDTH (ms)  
PW, PULSE WIDTH (ms)  
Figure 7. Maximum Non−repetitive Surge  
Power, Ppk versus PW  
Figure 8. Maximum Non−repetitive Surge  
Power, Ppk(NOM) versus PW  
Power is defined as V  
x I (pk) where V  
is  
Power is defined as V (NOM) x I (pk) where  
Z Z  
RSM  
Z
RSM  
the clamping voltage at I (pk).  
V (NOM) is the nominal Zener voltage measured at  
Z
Z
the low test current used for voltage classification.  
http://onsemi.com  
5
MMBZ16V, SZMMBZ16V  
TYPICAL COMMON ANODE APPLICATIONS  
A dual junction common anode design in a SOT−23  
package protects two separate lines using only one package.  
This adds flexibility and creativity to PCB design especially  
when board space is at a premium. Two simplified examples  
of TVS applications are illustrated below.  
Computer Interface Protection  
A
B
C
D
KEYBOARD  
TERMINAL  
PRINTER  
ETC.  
FUNCTIONAL  
DECODER  
I/O  
GND  
SZMMBZ16VALT1G  
Thru  
SZMMBZ16VTALT1G  
Microprocessor Protection  
V
V
DD  
GG  
ADDRESS BUS  
RAM  
ROM  
DATA BUS  
SZMMBZ16VALT1G  
Thru  
CPU  
I/O  
SZMMBZ16VTALT1G  
CLOCK  
CONTROL BUS  
GND  
SZMMBZ16VALT1G  
Thru  
SZMMBZ16VTALT1G  
http://onsemi.com  
6
MMBZ16V, SZMMBZ16V  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AP  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH  
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
SEE VIEW C  
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
H
E
MILLIMETERS  
INCHES  
E
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.09  
2.80  
1.20  
1.78  
0.10  
0.35  
2.10  
0°  
NOM  
1.00  
0.06  
0.44  
0.13  
2.90  
1.30  
1.90  
0.20  
0.54  
2.40  
−−−  
MAX  
MIN  
0.035  
0.001  
0.015  
0.003  
0.110  
0.047  
0.070  
0.004  
0.014  
0.083  
0°  
NOM  
0.040  
0.002  
0.018  
0.005  
0.114  
0.051  
0.075  
0.008  
0.021  
0.094  
−−−  
MAX  
0.044  
0.004  
0.020  
0.007  
0.120  
0.055  
0.081  
0.012  
0.029  
0.104  
10°  
1.11  
0.10  
0.50  
0.18  
3.04  
1.40  
2.04  
0.30  
0.69  
2.64  
10°  
c
1
2
b
0.25  
e
q
H
E
q
A
L
STYLE 12:  
A1  
L1  
VIEW C  
PIN 1. CATHODE  
2. CATHODE  
3. ANODE  
SOLDERING FOOTPRINT  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
0.8  
0.031  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,  
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC  
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without  
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications  
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC  
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for  
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where  
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and  
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,  
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture  
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
MMBZ16VAL/D  
厂商 型号 描述 页数 下载

ETC

SZM-01T-P0.7 可拆卸式压接式的线对线连接器[ Disconnectable Crimp style Wire-to-wire connectors ] 5 页

SIRENZA

SZM-2066Z 2.4-2.7GHz 2W功率放大器[ 2.4-2.7GHz 2W Power Amplifier ] 13 页

SIRENZA

SZM-2166Z 2.3-2.7GHz 2W功率放大器[ 2.3-2.7GHz 2W Power Amplifier ] 16 页

SIRENZA

SZM-2166Z-EVB1 2.3-2.7GHz 2W功率放大器[ 2.3-2.7GHz 2W Power Amplifier ] 16 页

SIRENZA

SZM-2166Z-EVB2 2.3-2.7GHz 2W功率放大器[ 2.3-2.7GHz 2W Power Amplifier ] 16 页

SIRENZA

SZM-2166Z-EVB3 2.3-2.7GHz 2W功率放大器[ 2.3-2.7GHz 2W Power Amplifier ] 16 页

SIRENZA

SZM-3066Z 3.3-3.8GHz 2W功率放大器[ 3.3-3.8GHz 2W Power Amplifier ] 9 页

SIRENZA

SZM-3166Z 3.3-3.6GHz 2W功率放大器[ 3.3-3.6GHz 2W Power Amplifier ] 9 页

SIRENZA

SZM-3166Z-EVB1 3.3-3.6GHz 2W功率放大器[ 3.3-3.6GHz 2W Power Amplifier ] 9 页

ETC

SZM-41T-P0.7 可拆卸式压接式的线对线连接器[ Disconnectable Crimp style Wire-to-wire connectors ] 5 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.227249s