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SZM-3066Z

型号：

SZM-3066Z

描述：

3.3-3.8GHz 2W功率放大器[ 3.3-3.8GHz 2W Power Amplifier ]

品牌：

SIRENZA[ SIRENZA MICRODEVICES ]

页数：

9 页

PDF大小：

610 K

下载PDF手册
Preliminary  
Product Description  
SZM-3066Z  
Sirenza Microdevices’ SZM-3066Z is a high linearity class AB  
Heterojunction Bipolar Transistor (HBT) amplifier housed in a  
low-cost surface-mountable plastic Q-FlexN multi-chip module  
package. This HBT amplifier is made with InGaP on GaAs  
device technology and fabricated with MOCVD for an ideal  
combination of low cost and high reliability.  
3.3-3.8GHz 2W Power Amplifier  
RoHS Compliant  
Pb  
& Green Package  
This product is specifically designed as a final or driver stage  
for 802.16 equipment in the 3.3-3.8 GHz bands. It can run from  
a 3V to 6V supply. The external output match and bias adjust-  
ability allows load line optimization for other applications or  
over narrower bands. It features an output power detector, on/  
off power control and high RF overdrive robustness. This prod-  
uct features a RoHS compliant and Green package with matte  
tin finish, designated by the ‘Z’ suffix.  
6mm x 6mm QFN Package  
Product Features  
• P1dB =33.5dBm @ 5V  
Functional Block Diagram  
• Three Stages of Gain: 34dB  
Vcc = 5V  
• 802.11g 54Mb/s Class AB Performance  
Pout = 26dBm @ 2.5% EVM, Vcc 5V,730mA  
• Active Bias with Adjustable Current  
• On-chip Output Power Detector  
• Low Thermal Resistance  
• Power up/down control < 1ms  
• Class 1C ESD Rating  
RFIN  
RFOUT  
Stage  
Bias  
1
Stage  
Bias  
2
Stage  
Bias  
3
Vbias = 5V  
Power  
Detector  
Power  
Up/Dow n  
Control  
Applications  
• 802.16 WiMAX Driver or Output Stage  
• Fixed Wireless, WLL  
Key Specifications  
Parameters: Test Conditions, 3.3-3.8GHz App circuit,  
Symbol  
Unit  
Min.  
Typ.  
Max.  
Z0 = 50W, VCC = 5.0V, Iq = 600mA, TBP = 30ºC  
fO  
P1dB  
S21  
Frequency of Operation  
MHz  
dBm  
dB  
3300  
3800  
Output Power at 1dB Compression – 3.5GHz  
Small Signal Gain @ Pout = 26dBm – 3.5GHz  
Output power at 2.5% EVM 802.11g 54Mb/s - 3.5GHz  
Third Order Suppression (Pout=23dBm per tone) - 3.5GHz  
Noise Figure at 3.6 GHz  
33.5  
32.5  
34  
Pout  
IM3  
dBm  
dBc  
dB  
26  
-38  
-33  
NF  
5
IRL  
Worst Case Input Return Loss 3.3-3.8GHz  
Worst Case Output Return Loss 3.3-3.8GHz  
Supply voltage range  
9
6
3
14  
dB  
ORL  
Vcc  
9
V
V
5
0.9 to 2.2  
600  
6
Vdet Range  
Icq  
Output Voltage Range for Pout=10dBm to 33dBm  
Quiescent Current (Vcc = 5V)  
mA  
mA  
mA  
ºC/W  
520  
680  
0.1  
IVPC  
Power Up Control Current (Vpc=5V) ( IVPC1 +IVPC2+ IVPC3  
Vcc Leakage Current (Vcc = 5V, Vpc = 0V)  
Thermal Resistance (junction - lead)  
)
5
Ileak  
Rth, j-l  
10  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.  
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without  
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. SirenzaMicrodevices does not authorize or warrant any Sirenza Microdevices product  
for use in life-support devices and/or systems.  
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-104608 Rev C  
Preliminary  
SZM-3066Z 3.3-3.8GHz 2W Power Amp  
Typical Performance 3.3-3.8GHz App Circuit (Vcc=5V, Icq=600mA, * 802.11g 54Mb/s 64QAM)  
Parameter  
Gain @ Pout=26dBm  
P1dB  
Units  
3.3GHz  
35.2  
34.4  
26.5  
769  
3.4GHz  
35.2  
34.3  
26.5  
769  
3.5GHz  
35.2  
34.3  
26.5  
752  
3.6GHz  
34.5  
34.1  
26.5  
750  
21  
3.7GHz  
32.8  
33.9  
26  
3.8GHz  
30.0  
33.0  
26  
dB  
dBm  
dBm  
mA  
Pout @ 2.5% EVM*  
Current @ Pout 2.5% EVM*  
Input Return Loss  
Output Return Loss  
750  
19  
720  
16  
dB  
15  
17  
19  
dB  
10  
10.5  
10  
9
9
8
Absolute Maximum Ratings  
Parameters  
Value  
1500  
600  
300  
9.0  
Unit  
mA  
mA  
mA  
V
VC3 Collector Bias Current (IVC3  
VC2 Collector Bias Current (IVC2  
VC1 Collector Bias Current (IVC1  
**Device Voltage (VD)  
)
)
)
Power Dissipation  
6
W
Operating Lead Temperature (TL)  
-40 to +85  
30  
ºC  
Caution: ESD Sensitive  
Appropriate precaution in handling, packaging  
and testing devices must be observed.  
*Max RF output Power for 50 ohm contin-  
uous long term operation  
dBm  
dBm  
dBm  
Max RF Input Power for 50 ohm output  
load  
29  
5
Max RF Input Power for 10:1 VSWR out-  
put load  
Storage Temperature Range  
Operating Junction Temperature (TJ)  
ESD Human Body Model  
-40 to +150  
+150  
ºC  
ºC  
V
1000  
Operation of this device beyond any one of these limits may  
cause permanent damage. For reliable continuous operation  
the device voltage and current must not exceed the maximum  
operating values specified in the table on page one.  
Bias conditions should also satisfy the following expression:  
IDVD < (TJ - TL) / RTH’ j-l  
* With specified application circuit.  
** No RF Drive  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
2
http://www.sirenza.com  
EDS-104608 Rev C  
Preliminary  
SZM-3066Z 3.3-3.8GHz 2W Power Amp  
Pin Out Description  
Description  
Pin #  
Function  
5, 7, 11,12,17,18, 22,  
29, 31, 33, 34, 39, 40  
These are no connect (NC) pins and are not wired inside the package. It is recommended to con-  
nect them as shown in the application circuit to achieve the stated performance.  
NC  
These pins are internally grounded inside the package to the backside ground paddle. It is recom-  
mended to also ground them external to the package to achieve the specified performance.  
1,10, 21, 30  
GND  
2
3
VC1  
This is the collector of the first stage.  
VBIAS12  
This is the supply voltage for the active bias circuit of the 1st and 2nd stages.  
This pin is not connected inside the package, but it is recommended to connect it to GND to  
achieve the specified performance.  
4
6
NC  
RFIN  
This is the RF input pin. It is DC grounded inside the package. Do not apply DC voltage to this pin.  
Power up/down control pin for the 1st stage. An external series resistor is required for proper set-  
ting of bias levels depending on control voltage. The voltage on this pin should never exceed the  
voltage on pin 3 by more than 0.5V unless the supply current from pin 3 is limited < 10mA.  
8
9
VPC1  
VPC2  
Power up/down control pin for the 2nd stage. An external series resistor is required for proper set-  
ting of bias levels depending on control voltage. The voltage on this pin should never exceed the  
voltage on pin 3 by more than 0.5V unless the supply current from pin 3 is limited < 10mA.  
These two pins are connected internal to the package to the 2nd stage collector. To achieve spec-  
ified performance, the layout of these pins should match the Recommended Land Pattern, pg. 9.  
13, 38  
14,15, 36, 37  
16,35  
VC2A, VC2B  
C1A,C2A  
C1B,C2B  
These pins have capacitors across them internal to the package as shown in the below schematic.  
They are used as tuning and RF coupling elements between the 2nd and 3rd stage.  
These are the connections to the base of the 3rd stage output device. To achieve specified perfor-  
mance, the layout of these pins should match the Recommended Land Pattern, pg. 9.  
VB3A, VB3B  
VPC3  
Power up/down control pin for the 3rd stage. An external series resistor is required for proper set-  
ting of bias levels depending on control voltage. The voltage on this pin should never exceed the  
voltage on pin 32 by more than 0.5V unless the supply current from pin 33 is limited < 10mA.  
19  
20  
23-28  
32  
VDET  
RFOUT  
VBIAS3  
This is the output port for the power detector. It samples the power at the input of the 3rd stage.  
These are the RF output pins and DC connections to the 3rd stage collector.  
This is the supply voltage for the active bias circuit of the 3rd stage.  
Simplified Device Schematic  
31  
30  
40  
GND  
VC1  
1
GND  
NC  
VBIAS12  
NC  
RFOUT  
RFOUT  
RFOUT  
NC  
RFIN  
NC  
RFOUT  
RFOUT  
VPC1  
VPC2  
RFOUT  
NC  
GND 10  
21  
GND  
11  
20  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
3
http://www.sirenza.com  
EDS-104608 Rev C  
Preliminary  
SZM-3066Z 3.3-3.8GHz 2W Power Amp  
Measured 3.3 - 3.8 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 600mA, T=25C)  
EVM vs Pout T=+25c  
802.11g, OFDM 54Mb/S, 64QAM  
EVM vs Pout F=3.4GHz  
802.11g, OFDM 54Mb/S, 64QAM  
6
5
4
3
2
1
0
6
5
4
3
2
1
0
12  
14  
16  
18  
20  
Pout(dBm)  
3.5GHz 3.6GHz  
22  
24  
26  
28  
30  
30  
28  
12  
14  
16  
18  
-40c  
20  
22  
24  
26  
28  
30  
Pout(dBm)  
3.4GHz  
3.7GHz  
+25c  
+85c  
EVM vs Pout F=3.6GHz  
802.11g, OFDM 54Mb/S, 64QAM  
EVM vs Pout F=3.7GHz  
802.11g, OFDM 54Mb/S, 64QAM  
6
5
4
3
2
1
0
6
5
4
3
2
1
0
12  
14  
16  
18  
-40c  
20  
22  
24  
26  
28  
12  
14  
16  
18  
-40c  
20  
22  
24  
26  
28  
30  
Pout(dBm)  
Pout(dBm)  
+25c  
+85c  
+25c  
+85c  
IM3 vs Pout (2 Tone Avg.),T=+25c  
Tone Spacing = 1MHz  
Typical Gain vs Pout, F=3.4GHz  
40  
-25  
-30  
-35  
-40  
-45  
-50  
-55  
-60  
-65  
38  
36  
34  
32  
30  
28  
18  
20  
22  
24  
26  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
36  
Pout(dBm)  
Pout(dBm)  
+25c  
3.4GHz  
3.5GHz 3.6GHz  
3.7GHz  
-40c  
+85c  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
4
http://www.sirenza.com  
EDS-104608 Rev C  
Preliminary  
SZM-3066Z 3.3-3.8GHz 2W Power Amp  
Measured 3.3 - 3.8 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 600mA, T=25C)  
Typical Gain vs Pout, F=3.6GHz  
Typical Gain vs Pout, F=3.7GHz  
40  
38  
36  
34  
32  
30  
28  
40  
38  
36  
34  
32  
30  
28  
16  
18  
20  
22  
24  
26  
28  
30  
+85c  
32  
34  
36  
16  
18  
20  
22  
24  
26  
28  
30  
+85c  
32  
34  
36  
Pout(dBm)  
Pout(dBm)  
-40c  
+25c  
-40c  
+25c  
Narrowband S11 - Input Return Loss  
Narrowband S12 - Reverse Isolation  
0
-40  
-5  
-50  
-60  
-70  
-80  
-90  
-10  
-15  
-20  
-25  
-30  
3.0  
3.1  
3.2  
3.3  
3.4  
Frequency(GHz)  
-40C +25C  
3.5  
3.6  
3.7  
3.8  
3.9  
4.0  
3.0  
3.1  
3.2  
3.3  
3.4  
Frequency(GHz)  
-40C +25C  
3.5  
3.6  
3.7  
3.8  
3.9  
4.0  
+85C  
+85C  
Narrowband S21 - Forward Gain  
Narrowband S22 - Output Return Loss  
40  
35  
30  
25  
20  
15  
10  
0
-5  
-10  
-15  
-20  
3.0  
3.1  
3.2  
3.3  
3.4  
Frequency(GHz)  
-40C +25C  
3.5  
3.6  
3.7  
3.8  
3.9  
4.0  
3.0  
3.1  
3.2  
3.3  
3.4  
Frequency(GHz)  
-40C +25C  
3.5  
3.6  
3.7  
3.8  
3.9  
4.0  
+85C  
+85C  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
5
http://www.sirenza.com  
EDS-104608 Rev C  
Preliminary  
SZM-3066Z 3.3-3.8GHz 2W Power Amp  
Measured 3.3 - 3.8 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 600mA, T=25C)  
DC Supply Current vs Pout, T=25C  
DC Supply Current vs Pout, F=3.5GHz  
1.6  
1.4  
1.2  
1
1.6  
1.4  
1.2  
1
0.8  
0.6  
0.4  
0.8  
0.6  
0.4  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
36  
16  
18  
20  
22  
24  
26  
28  
30  
+85c  
32  
34  
36  
Pout(dBm)  
Pout(dBm)  
3.4GHz  
3.5GHz  
3.6GHz  
3.7GHz  
-40c  
+25c  
RF Power Detector (Vdet) vs Pout, F=3.4GHz  
Noise Figure vs Frequency  
2.8  
2.6  
2.4  
2.2  
2
7.5  
6.5  
5.5  
4.5  
3.5  
2.5  
1.8  
1.6  
1.4  
1.2  
1
3.3  
3.4  
3.5  
Frequency(GHz)  
-40C +25C  
3.6  
3.7  
3.8  
16  
18  
20  
22  
24  
26  
28  
30  
+85c  
32  
34  
36  
Pout(dBm)  
+85C  
-40c  
+25c  
Icq vs Vpc, Vcc=5V, swept Vpc  
See App. Circuit pg. 8 for Vpc resistor value used  
RF Power Detector (Vdet) vs Pout, F=3.7GHz  
2.8  
2.6  
2.4  
2.2  
2
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
1.8  
1.6  
1.4  
1.2  
1
3
3.5  
4
4.5  
5
16  
18  
20  
22  
24  
26  
28  
30  
+85c  
32  
34  
36  
Vpc(V)  
Pout(dBm)  
-40c  
+25c  
-40c  
+25c  
+85c  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
6
http://www.sirenza.com  
EDS-104608 Rev C  
Preliminary  
SZM-3066Z 3.3-3.8GHz 2W Power Amp  
Measured 3.3 - 3.8 GHz Application Circuit Data (Vcc = Vpc = 5.0V, Iq = 600mA, T=25C)  
Broadband S11 - Input Return Loss  
Broadband S12 - Reverse Isolation  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
0
-5  
-10  
-15  
-20  
-25  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
Frequency(GHz)  
Frequency(GHz)  
-40C  
+25C  
+85C  
-40C  
+25C  
+85C  
Broadband S21 - Forward Gain  
Broadband S22 - Output Return Loss  
0
-5  
40  
35  
30  
25  
20  
15  
10  
-10  
-15  
-20  
-25  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
Frequency(GHz)  
Frequency(GHz)  
-40C  
+25C  
+85C  
-40C  
+25C  
+85C  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
7
http://www.sirenza.com  
EDS-104608 Rev C  
Preliminary  
SZM-3066Z 3.3-3.8GHz 2W Power Amp  
3.3-3.8 GHz Evaluation Board Schematic For Vcc = V+ = Vpc = 5.0V  
3.3-3.8 GHz Evaluation Board Layout For Vcc = V+ = Vpc = 5.0V  
Board material GETEK, 10mil thick, Dk=3.9, 2 oz. copper  
C1  
C7  
C3  
L2  
C4  
C2  
R8  
C6  
R7  
R6  
C5  
L1  
C8  
C9  
Q1  
R5  
R1  
R9  
R2  
R3  
R4  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
8
http://www.sirenza.com  
EDS-104608 Rev C  
Preliminary  
SZM-3066Z 3.3-3.8GHz 2W Power Amp  
Part Symbolization  
Part Number Ordering Information  
The part will be symbolized with “SZM-3066Z” to desig-  
nate it as a RoHs green compliant product. Marking des-  
ignator will be on the top surface of the package.  
Part Number  
Reel Size  
Devices/Reel  
SZM-3066Z  
13”  
3000  
Package Outline Drawing (dimensions in mm):  
Recommended Metal Land Pattern  
(dimensions in mm[in]):  
Recommended PCB Soldermask  
for Land Pattern (dimensions in mm[in]):  
303 South Technology Court Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
http://www.sirenza.com  
EDS-104608 Rev C  
9
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