CZT955
www.centralsemi.com
SURFACE MOUNT SILICON
HIGH CURRENT
DESCRIPTION:
PNP TRANSISTOR
The CENTRAL SEMICONDUCTOR CZT955 is a
silicon high current PNP transistor manufactured by
the epitaxial planar process, epoxy molded in a surface
mount package, designed for high voltage and high
current amplifier applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
UNITS
V
V
V
A
A
W
°C
°C/W
A
V
V
V
180
140
7.0
4.0
10
CBO
CEO
EBO
I
C
I
CM
P
T
3.0
-65 to +150
41.7
D
T
J, stg
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
I
I
I
V
V
V
V
=150V
=150V, T =100°C
=150V, R ≤1.0kΩ
BE
=6.0V
20
0.5
20
10
nA
CBO
CBO
CER
EBO
CBO
CER
CB
CB
CE
EB
μA
nA
nA
V
V
V
A
BV
BV
BV
BV
V
V
V
V
V
V
h
h
h
h
f
C
I =100ꢀA
180
180
140
7.0
200
200
160
8.0
40
55
C
I =1.0μA, R ≤1.0kΩ
BE
C
I =10mA
CEO
EBO
C
I =100ꢀA
V
E
I =100mA, I =5.0mA
60
80
120
360
1.04
930
mV
mV
mV
mV
V
CE(SAT)
CE(SAT)
CE(SAT)
CE(SAT)
BE(SAT)
BE(ON)
FE
FE
FE
FE
T
C
B
I =0.5A, I =50mA
C
B
B
B
B
I =1.0A, I =100mA
85
C
I =3.0A, I =300mA
210
0.96
830
250
220
C
I =3.0A, I =300mA
C
V
=5.0V, I =3.0A
=5.0V, I =10mA
=5.0V, I =1.0A
=5.0V, I =3.0A
=5.0V, I =10A
=10V, I =100mA, f=50MHz
=10V, I =0, f=1.0MHz
mV
CE
CE
CE
CE
CE
CE
CB
CC
CC
C
C
C
C
V
V
V
V
V
V
V
V
100
100
35
300
5.0
200
33
25
410
C
MHz
pF
ns
C
E
C
C
ob
on
off
t
t
=50V, I =1.0A, I =I =0.1A
=50V, I =1.0A, I =I =0.1A
B1 B2
B1 B2
ns
Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in2 (minimum)
R2 (11-June 2013)
