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SZESD7205WTT1G

型号:

SZESD7205WTT1G

品牌:

ONSEMI[ ONSEMI ]

页数:

8 页

PDF大小:

133 K

ESD7205, SZESD7205  
ESD Protection Diodes  
Low Capacitance ESD Protection Diodes  
for High Speed Data Line  
The ESD7205 transient voltage suppressor is designed to protect  
high speed data lines from ESD. Ultra−low capacitance and low ESD  
clamping voltage make this device an ideal solution for protecting  
voltage sensitive high speed data lines. The small form factor,  
flow−through style package allows for easy PCB layout and matched  
trace lengths necessary to maintain consistent impedance between  
high speed differential lines such as Ethernet and LVDS present in  
automotive camera modules.  
www.onsemi.com  
MARKING  
DIAGRAMS  
SOT−723  
CASE 631AA  
EA M  
1
EA  
M
= Specific Device Code  
= Date Code  
Features  
Low Capacitance (0.4 pF Typical, I/O to GND)  
Diode capacitance matching  
SC−70  
CASE 419  
ECMG  
Protection for the Following IEC Standards:  
IEC 61000−4−2 Level 4 (ESD)  
G
1
Low ESD Clamping Voltage (12 V Typical, +16 A TLP, I/O to GND)  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
EC  
= Specific Device Code  
= Date Code  
= Pb−Free Package  
M
G
(Note: Microdot may be in either location)  
These Devices are Pb−Free and are RoHS Compliant  
Typical Applications  
PIN CONFIGURATION  
AND SCHEMATIC  
100BASE−T1 / OPEN Alliance BroadR−Reach Automotive Ethernet  
10/100/1000BASE−T Ethernet  
LVDS  
Automotive USB 2.0  
High Speed Differential Pairs  
Pin 1 Pin 2  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
55 to +125  
55 to +150  
260  
Unit  
°C  
Pin 3  
Operating Junction Temperature Range  
Storage Temperature Range  
T
J
T
stg  
°C  
Lead Solder Temperature −  
Maximum (10 Seconds)  
T
L
°C  
=
IEC 61000−4−2 Contact  
IEC 61000−4−2 Air  
ISO 10605 330 pF / 2 kW Contact  
ISO 10605 330 pF / 330 W Contact  
ESD  
25  
25  
30  
20  
kV  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 6 of this data sheet.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
November, 2016 − Rev. 2  
ESD7205/D  
ESD7205, SZESD7205  
ELECTRICAL CHARACTERISTICS  
I
(T = 25°C unless otherwise noted)  
A
I
F
Symbol  
Parameter  
Maximum Reverse Peak Pulse Current  
Clamping Voltage @ I  
I
PP  
V
C
PP  
V
C
V V  
BR RWM  
V
Working Peak Reverse Voltage  
RWM  
V
I
V
F
R
T
I
R
Maximum Reverse Leakage Current @ V  
I
RWM  
V
Breakdown Voltage @ I  
Test Current  
BR  
T
I
T
*See Application Note AND8308/D for detailed explanations of  
datasheet parameters.  
I
PP  
Uni−Directional TVS  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)  
A
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
Reverse Working  
Voltage  
V
RWM  
I/O Pin to GND  
5.0  
V
Breakdown Voltage  
V
I = 1 mA, I/O Pin to GND  
5.2  
6.0  
8.0  
1
V
BR  
T
Reverse Leakage  
Current  
I
V
= 5.0 V, I/O Pin to GND  
mA  
R
RWM  
Clamping Voltage  
(Note 1)  
V
C
IEC61000−4−2, 8 kV Contact  
See Figures 3 and 4  
Clamping Voltage TLP  
(Note 2)  
V
C
I
= 8 A  
= 16 A  
= −8 A  
= −16 A  
10  
V
PP  
I
PP  
I
PP  
12.5  
−4.0  
−8.0  
I
PP  
Junction Capacitance  
Match  
DC  
VR = 0 V, f = 1 MHz between I/O1 to GND and I/O  
2 to GND  
5
10  
%
J
Junction Capacitance  
C
pF  
VR = 0 V, f = 1 MHz between I/O Pins and GND  
J
0.34  
0.47  
0.55  
0.85  
ESD7205DT5G  
ESD7205WTT1G  
VR = 0 V, f = 1 MHz between I/O Pins  
0.20  
0.23  
0.35  
0.40  
ESD7205DT5G  
ESD7205WTT1G  
3dB Bandwidth  
f
R = 50 W  
L
5
GHz  
BW  
1. For test procedure see Figures 5 and 6 and application note AND8307/D.  
2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.  
TLP conditions: Z = 50 W, t = 100 ns, t = 4 ns, averaging window; t = 30 ns to t = 60 ns.  
0
p
r
1
2
www.onsemi.com  
2
 
ESD7205, SZESD7205  
1.E−02  
1.E−03  
1.E−04  
1.E−05  
1.E−06  
1.E−07  
1.E−08  
1.E−09  
1.E−10  
1.E−11  
1.E−12  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
I/O−GND  
−2 −1  
0
1
2
3
4
5
6
7
8
9
10  
0
1
2
3
4
5
V (V)  
VBias (V)  
Figure 1. IV Characteristics  
Figure 2. CV Characteristics  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
10  
0
−10  
−20  
−30  
−40  
−50  
−60  
−70  
−80  
−90  
−10  
−20  
−20  
0
20  
40  
60  
80  
100  
120 140  
0
20  
40  
60  
80  
100  
120  
140  
TIME (ns)  
TIME (ns)  
Figure 3. IEC61000−4−2 +8 kV Contact ESD  
Clamping Voltage  
Figure 4. IEC61000−4−2 −8 kV Contact ESD  
Clamping Voltage  
www.onsemi.com  
3
ESD7205, SZESD7205  
IEC61000−4−2 Waveform  
IEC 61000−4−2 Spec.  
I
peak  
First Peak  
Current  
(A)  
100%  
90%  
Test Volt-  
age (kV)  
Current at  
30 ns (A)  
Current at  
60 ns (A)  
Level  
1
2
3
4
2
4
6
8
7.5  
15  
4
8
2
4
6
8
I @ 30 ns  
22.5  
30  
12  
16  
I @ 60 ns  
10%  
t
P
= 0.7 ns to 1 ns  
Figure 5. IEC61000−4−2 Spec  
Oscilloscope  
ESD Gun  
TVS  
50 W  
Cable  
50 W  
Figure 6. Diagram of ESD Clamping Voltage Test Setup  
The following is taken from Application Note  
AND8308/D − Interpretation of Datasheet Parameters  
for ESD Devices.  
systems such as cell phones or laptop computers it is not  
clearly defined in the spec how to specify a clamping voltage  
at the device level. ON Semiconductor has developed a way  
to examine the entire voltage waveform across the ESD  
protection diode over the time domain of an ESD pulse in the  
form of an oscilloscope screenshot, which can be found on  
the datasheets for all ESD protection diodes. For more  
information on how ON Semiconductor creates these  
screenshots and how to interpret them please refer to  
AND8307/D.  
ESD Voltage Clamping  
For sensitive circuit elements it is important to limit the  
voltage that an IC will be exposed to during an ESD event  
to as low a voltage as possible. The ESD clamping voltage  
is the voltage drop across the ESD protection diode during  
an ESD event per the IEC61000−4−2 waveform. Since the  
IEC61000−4−2 was written as a pass/fail spec for larger  
www.onsemi.com  
4
ESD7205, SZESD7205  
20  
18  
16  
14  
12  
10  
8
10  
10  
8
−20  
−18  
−16  
−14  
−12  
−10  
−8  
8
6
6
4
4
6
−6  
4
2
−4  
2
2
−2  
0
0
0
0
0
0
2
4
6
8
10 12 14  
16 18 20  
2
4
6
8
10 12 14  
16 18 20  
VOLTAGE (V)  
VOLTAGE (V)  
Figure 7. Positive TLP IV Curve  
Figure 8. Negative TLP IV Curve  
NOTE: TLP parameter: Z = 50 W, t = 100 ns, t = 300 ps, averaging window: t = 30 ns to t = 60 ns.  
0
p
r
1
2
50 W Coax  
Cable  
Transmission Line Pulse (TLP) Measurement  
L
Attenuator  
S
Transmission Line Pulse (TLP) provides current versus  
voltage (I−V) curves in which each data point is obtained  
from a 100 ns long rectangular pulse from a charged  
transmission line. A simplified schematic of a typical TLP  
system is shown in Figure 9. TLP I−V curves of ESD  
protection devices accurately demonstrate the product’s  
ESD capability because the 10s of amps current levels and  
under 100 ns time scale match those of an ESD event. This  
is illustrated in Figure 10 where an 8 kV IEC 61000−4−2  
current waveform is compared with TLP current pulses at  
8 A and 16 A. A TLP I−V curve shows the voltage at which  
the device turns on as well as how well the device clamps  
voltage over a range of current levels.  
÷
50 W Coax  
Cable  
I
M
V
M
10 MW  
DUT  
V
C
Oscilloscope  
Figure 9. Simplified Schematic of a Typical TLP  
System  
Figure 10. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms  
www.onsemi.com  
5
 
ESD7205, SZESD7205  
1
0
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
−1  
−2  
−3  
−4  
−5  
−6  
−7  
−8  
−9  
3.3 V  
0 V  
−10  
1.E+06  
1.E+07  
1.E+08  
1.E+09  
1.E+10  
0.E+00 5.E+08 1.E+09 2.E+09 2.E+09 3.E+09 3.E+09  
FREQUENCY (Hz)  
FREQUENCY  
Figure 11. RF Insertion Loss  
Figure 12. Capacitance over Frequency  
ORDERING INFORMATION  
Device  
Package  
Shipping  
ESD7205DT5G  
SOT−723  
(Pb−Free)  
8000 / Tape & Reel  
8000 / Tape & Reel  
3000 / Tape & Reel  
3000 / Tape & Reel  
SZESD7205DT5G*  
ESD7205WTT1G  
SOT−723  
(Pb−Free)  
SOT−323  
(Pb−Free)  
SZESD7205WTT1G*  
SOT−323  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP  
Capable.  
www.onsemi.com  
6
ESD7205, SZESD7205  
PACKAGE DIMENSIONS  
SOT−723  
CASE 631AA  
ISSUE D  
NOTES:  
−X−  
E
1. DIMENSIONING AND TOLERANCING PER ASME  
Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
D
A
b1  
−Y−  
3
HE  
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
1
2
MILLIMETERS  
2X b  
C
DIM MIN  
NOM  
0.50  
MAX  
0.55  
0.27  
0.37  
0.17  
1.25  
0.85  
2X e  
0.08 X Y  
A
b
b1  
C
D
E
0.45  
0.15  
0.25  
0.07  
1.15  
0.75  
SIDE VIEW  
0.21  
0.31  
0.12  
1.20  
TOP VIEW  
3X  
L
1
0.80  
0.40 BSC  
e
H E  
L
L2  
1.15  
0.15  
1.20  
0.29 REF  
0.20  
1.25  
0.25  
RECOMMENDED  
3X  
L2  
SOLDERING FOOTPRINT*  
BOTTOM VIEW  
2X  
0.40  
2X  
0.27  
PACKAGE  
OUTLINE  
1.50  
3X 0.52  
0.36  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
7
ESD7205, SZESD7205  
PACKAGE DIMENSIONS  
SC−70 (SOT−323)  
CASE 419−04  
ISSUE N  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
D
e1  
MILLIMETERS  
INCHES  
DIM  
A
A1  
A2  
b
c
D
E
e
MIN  
0.80  
0.00  
NOM  
0.90  
0.05  
0.70 REF  
0.35  
0.18  
2.10  
1.24  
1.30  
0.65 BSC  
MAX  
1.00  
0.10  
MIN  
0.032  
0.000  
NOM  
0.035  
0.002  
0.028 REF  
0.014  
0.007  
0.083  
0.049  
0.051  
0.026 BSC  
MAX  
0.040  
0.004  
3
E
H
E
1
2
0.30  
0.10  
1.80  
1.15  
1.20  
0.40  
0.25  
2.20  
1.35  
1.40  
0.012  
0.004  
0.071  
0.045  
0.047  
0.016  
0.010  
0.087  
0.053  
0.055  
b
e
e1  
L
H
E
0.38  
2.10  
0.015  
0.083  
0.20  
2.00  
0.56  
2.40  
0.008  
0.079  
0.022  
0.095  
c
A
A2  
0.05 (0.002)  
L
A1  
SOLDERING FOOTPRINT*  
0.65  
0.025  
0.65  
0.025  
1.9  
0.075  
0.9  
0.035  
0.7  
0.028  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
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literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
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Order Literature: http://www.onsemi.com/orderlit  
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
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For additional information, please contact your local  
Sales Representative  
ESD7205/D  
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