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8V49N231

型号:

8V49N231

品牌:

IDT[ INTEGRATED DEVICE TECHNOLOGY ]

页数:

31 页

PDF大小:

677 K

Clock Generator for Broadcom Processor  
8V49N231  
Datasheet  
General Description  
Features  
The 8V49N231 is a high-performance PLL-based clock generator  
designed to interface with Broadcom XLP2xxx processors. The  
8V49N231 has one 25MHz crystal input to generate output  
frequencies to support XLP Core/DDR3, USB, SGMII/XAUI and  
PCIe reference clocks in a single chip. The 8V49N231 low jitter VCO  
easily meets PCI Express Gen 1, 2 and 3 requirements.  
Fourth Generation FemtoClock® NG PLL technology  
Eleven outputs to support 133.33MHz/66.66MHz, 100MHz,  
125MHz for core/DDR3, USB, SGMII/XAUI and PCIe reference  
clocks  
Two 1.8V LVCMOS clock outputs for core/DDR3 at 133.33MHz or  
Excellent phase noise performance is maintained with IDT’s Fourth  
Generation FemtoClock® NG technology.  
66.66MHz  
One LVDS clock output for USB at 100MHz  
Three LVDS clock outputs for SGMII/XAUI at 125MHz  
Five HCSL clock outputs for PCIe at 100MHz  
Crystal oscillator interface designed for 25MHz, parallel  
resonant crystal  
PCI Express Gen 1 (2.5Gb/s), Gen 2 (5Gb/s) and Gen 3 (8Gb/s)  
jitter compliant  
Power supply modes:  
Core / Output  
3.3V / 3.3V (HCSL, LVDS outputs)  
3.3V / 1.8V (LVCMOS outputs only)  
Lead-free (RoHS 6) packaging  
-40°C to 85°C ambient operating temperature  
Pin Assignment  
42 41 40 39 38 37 36 35 34 33 32 31 30 29  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
VDDO_C  
nQC4  
QC4  
GND  
OE_1  
OE_2  
OE_3  
OE_4  
GND  
nQC3  
QC3  
VSSO_C  
nQC2  
QC2  
VDD  
8V49N231  
FSEL  
BYPASS  
nc  
VDDO_C  
nQC1  
QC1  
QA1  
nQC0  
QC0  
QA0  
VDDO_A  
GND  
VDDO_C  
1
2 3 4 5 6 7 8 9 10 11 12 13 14  
56-Lead, 8mm x 8mm VFQFN  
©2016 Integrated Device Technology, Inc.  
1
Revison C, November 2, 2016  
8V49N231 Datasheet  
Block Diagram  
Pullup  
OE_1  
Pulldown  
FSEL  
QA0  
LVCMOS  
LVCMOS  
Bank A  
0 = 133.33MHz  
1 = 66.66MHz  
(Core/  
DDR3)  
QA1  
Pullup  
OE_2  
QB0  
nQB0  
Pulldown  
LVDS  
LVDS  
BYPASS  
(SGMII/  
XAUI)  
QB1  
nQB1  
XTAL_IN  
Bank B  
125MHz  
Xtal  
Osc  
25MHz  
Phase  
Detector +  
Charge  
Pump  
FemtoClock® NG  
VCO  
1
0
QB2  
XTAL_OUT  
LVDS  
nQB2  
QC0  
nQC0  
HCSL  
HCSL  
QC1  
nQC1  
Feedback  
Divider  
QC2  
nQC2  
HCSL  
HCSL  
Bank C  
100MHz  
IREF  
(PCIe)  
(USB)  
QC3  
nQC3  
QC4  
nQC4  
HCSL  
LVDS  
Pullup  
OE_4  
QC5  
nQC5  
Pullup  
OE_3  
©2016 Integrated Device Technology, Inc.  
2
Revison C, November 2, 2016  
8V49N231 Datasheet  
Pin Descriptions and Characteristics  
Table 1. Pin Descriptions  
Number  
Name  
GNDA  
VDDA  
Type  
Description  
1
2
Power  
Power  
Analog power supply ground pin.  
Analog power supply pin.  
3, 8, 11, 43,  
48, 56  
GND  
Power  
Power  
Input  
Power supply ground pin.  
XTAL ground pin.  
4
GND_XTAL  
5
6
XTAL_IN,  
XTAL_OUT  
Parallel resonant crystal interface. XTAL_IN is the input, XTAL_OUT is  
the output.  
7
VDD_XTAL  
VDDD  
Power  
Power  
XTAL power supply pin.  
Digital power supply pin.  
Digital ground supply pin.  
12  
13  
GNDD  
HCSL current reference resistor output. An external fixed precision resistor  
(475) from this pin to ground provides a reference current used for HCSL  
outputs.  
14  
IREF  
Input  
15, 20, 28  
VDDO_C  
Power  
Bank C HCSL output supply pins.  
16, 17  
18, 19  
21, 22  
24, 25  
26, 27  
QC0, nQC0  
QC1, nQC1  
QC2, nQC2  
QC3, nQC3  
QC4, nQC4  
Output  
Differential output pairs. HCSL interface levels.  
23  
29  
VSSO_C  
VDDO_C5  
nQC5, QC5  
VSSO_C5  
VSSO_B  
Power  
Power  
Output  
Power  
Power  
Bank C HCSL output supply ground pin.  
Bank C QC5, nQC5 LVDS output power supply pin.  
Differential output pair. LVDS interface levels.  
Bank C QC5, nQC5 LVDS output power supply ground pin.  
Bank B LVDS output power ground pins.  
30, 31  
32  
33, 39  
34, 35  
37, 38  
40, 41  
nQB2, QB2  
nQB1, QB1  
nQB0, QB0  
Output  
Differential output pairs. LVDS interface levels.  
36, 42  
VDDO_B  
Power  
Input  
Bank B output power supply pins.  
44, 45,  
46, 47  
OE_1, OE_2  
OE_3, OE_4  
Pullup  
Output enable pins. See Table 3B. LVCMOS/LVTTL interface levels.  
Core supply pin.  
49  
50  
VDD  
Power  
Input  
Selects QAx output frequency. See Table 3A. LVCMOS/LVTTL interface  
levels.  
FSEL  
Pulldown  
Pulldown  
PLL Bypass mode select pin. See Table 3C for function.  
LVCMOS/LVTTL interface levels.  
51  
BYPASS  
Input  
52, 10  
53, 54  
55, 9  
nc  
Unused  
Output  
Power  
No connect.  
QA1, QA0  
VDDO_A  
Single-ended LVCMOS/LVTTL outputs.  
Bank A output supply pin using an 1.8V supply mode.  
NOTE: Pulldown and Pullup refer to an internal input resistor. See Table 2, Pin Characteristics, for typical values.  
©2016 Integrated Device Technology, Inc.  
3
Revison C, November 2, 2016  
8V49N231 Datasheet  
Table 2. Pin Characteristics  
Symbol  
CIN  
Parameter  
Test Conditions  
Minimum  
Typical  
3.5  
Maximum  
Units  
pF  
Input Capacitance  
Input Pulldown Resistor  
Input Pullup Resistor  
Output  
OE[1:4], BYPASS, FSEL  
RPULLDOWN  
RPULLUP  
51  
k  
51  
k  
ROUT  
QA[0:1]  
VDDO_A = 1.8V  
30  
Impedance  
Function Tables  
Table 3A. Frequency Select Table  
Table 3B. OE Function Table  
FSEL  
0 (default)  
1
QAx Outputs  
133.33MHz  
66.66MHz  
OEx  
0
Output State  
High Impedance  
Enabled  
1 (default)  
Table 3C. PLL BYPASS Function Table  
BYPASS  
Operation  
PLL is bypassed. The reference frequency is divided by the selected output dividers in Bank A, Bank B,  
Bank C. AC specifications do not apply in PLL BYPASS mode.  
1
PLL is enabled. The reference frequency is multiplied by the PLL feedback divider and then divided by the  
selected output dividers in Bank A, Bank B, Bank C.  
0 (default)  
©2016 Integrated Device Technology, Inc.  
4
Revison C, November 2, 2016  
8V49N231 Datasheet  
Absolute Maximum Ratings  
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress  
specifications only. Functional operation of the product at these conditions or any conditions beyond those listed in the DC Characteristics or  
AC Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability.  
Item  
Rating  
Supply Voltage, VDD  
3.63V  
Inputs, VI  
XTAL_IN  
0V to 2V  
Other Inputs  
-0.5V to VDDO_X + 0.5V  
Outputs, VO (LVCMOS)  
-0.5V to VDDO_A + 0.5V  
Outputs, VO (LVDS)  
Continuous Current  
10mA  
15mA  
Outputs, VO (HCSL)  
-0.5V to VDDO_C + 0.5V  
125°C  
Junction Temperature, TJ  
Storage Temperature, TSTG  
-65°C to 150°C  
DC Electrical Characteristics  
Table 4A. Power Supply DC Characteristics,  
V
= V  
= V  
= V  
= V  
= V  
= 3.3V ± 5%, V  
= 1.8V ± 5%, T = -40°C to 85°C  
DD  
DD_XTAL  
DDD  
DDO_B  
DDO_C  
DDO_C5  
DDO_A  
A
Symbol Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
3.465  
Units  
VDDX  
Core Supply Voltage  
Analog Supply Voltage  
Output Supply Voltage  
3.135  
VDD – 0.1  
3.135  
3.3  
V
V
V
VDDA  
VDD  
VDDO_X  
3.3  
1.8  
3.465  
Output Supply Voltage  
(Bank A)  
VDDO_A  
1.71  
1.89  
V
IDDX  
Power Supply Current  
Analog Supply Current  
Output Supply Current  
115  
49  
132  
58  
mA  
mA  
mA  
IDDA  
IDDO_X  
77  
97  
HCSL output are disabled, LVDS outputs  
are terminated with 100and LVCMOS  
outputs QA are terminated with 50to 0.9V  
Output Supply Current  
(Bank A)  
IDDO_A  
12  
15  
mA  
NOTE: VDDO_X denotes, VDDO_B, VDDO_C, VDDO_C5.  
NOTE: IDDO_X denotes, IDDO_B, IDDO_C, IDDO_C5.  
NOTE: VDDX denotes, VDD, VDDD, VDD_XTAL.  
NOTE: IDDX denotes, IDD, IDDD, IDD_XTAL.  
©2016 Integrated Device Technology, Inc.  
5
Revison C, November 2, 2016  
8V49N231 Datasheet  
Table 4B. LVCMOS/LVTTL Input DC Characteristics, V = 3.3V ± 5%, V  
= 1.8V ± 5%, T = -40°C to 85°C  
DD  
DDO_A  
A
Symbol  
VIH  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
VDD + 0.3  
0.8  
Units  
Input High Voltage  
Input Low Voltage  
2
V
V
VIL  
-0.3  
FSEL,  
BYPASS  
VDD = VIN = 3.465V  
VDD = VIN = 3.465V  
150  
5
µA  
µA  
µA  
µA  
V
Input  
High Current  
IIH  
OE_[4:1]  
FSEL,  
BYPASS  
VDD = 3.465V, VIN = 0V  
VDD = 3.465V, VIN = 0V  
-5  
Input  
Low Current  
IIL  
OE_[4:1]  
QA[1:0]  
-150  
1.5  
Output  
High Voltage  
VDDO_A = 1.89V  
IOH = -6mA  
VOH  
VOL  
Output  
Low Voltage  
VDDO_A = 1.89V  
IOL = 6mA  
QA[1:0]  
0.4  
V
Table 4C. LVDS Power Supply DC Characteristics,  
= V = V = V = V = V  
V
= 3.3V ± 5%,V  
= 1.8V ± 5%, T = -40°C to 85°C  
DDO_A A  
DD  
DD_XTAL  
DDD  
DDO_B  
DDO_C  
DDO_C5  
Symbol  
VOD  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
454  
Units  
mV  
mV  
V
Differential Output Voltage  
VOD Magnitude Change  
Offset Voltage  
247  
355  
VOD  
VOS  
50  
1.125  
1.25  
1.375  
50  
VOS  
VOS Magnitude Change  
mV  
Table 5. Crystal Characteristics  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
Mode of Oscillation  
Fundamental  
Frequency  
25  
12  
MHz  
pF  
Capacitance Loading (CL)  
Equivalent Series Resistance (ESR)  
Shunt Capacitance  
18  
80  
7
pF  
©2016 Integrated Device Technology, Inc.  
6
Revison C, November 2, 2016  
8V49N231 Datasheet  
AC Electrical Characteristics  
Table 6A. LVCMOS AC Electrical Characteristics,  
V
= V  
= V  
= 3.3V ± 5%, V  
Minimum  
66.66  
= 1.8V ± 5%, T = -40°C to 85°C  
DD  
DD_XTAL  
DDD  
DDO_A A  
Symbol Parameter  
Test Conditions  
Typical  
Maximum  
Units  
fOUT  
Output Frequency  
133.33  
MHz  
fOUT = 133.33MHz,  
Integration Range (12kHz to 20MHz)  
250  
364  
300  
525  
fs  
fs  
RMS Phase Jitter (Random);  
NOTE 1  
tJIT  
fOUT = 66.66MHz,  
Integration Range (12kHz to 20MHz)  
n(100)  
n(1k)  
100Hz from carrier  
1kHz from carrier  
10kHz from carrier  
100kHz from carrier  
1MHz from carrier  
10MHz from carrier  
-102  
-122  
-132  
-137  
-145  
-152  
14  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
ps  
n(10k)  
n(100k)  
n(1M)  
n(10M)  
Single-side Band Phase  
Noise for fout = 133.33MHz  
f
OUT = 133.33MHz  
fOUT = 66.66MHz  
40  
30  
Cycle-to-Cycle Jitter;  
NOTE 2  
tJIT(cc)  
12  
ps  
odc  
Output Duty Cycle  
47  
50  
53  
%
tR / tF  
Output Rise/ Fall Time  
20% to 80%  
650  
840  
1150  
ps  
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device  
is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal  
equilibrium has been reached under these conditions.  
NOTE: Data taken in PLL mode.  
NOTE 1: Refer to the phase noise plot.  
NOTE 2: This parameter is defined in accordance with JEDEC Standard 65.  
NOTE 3: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at VDDO_A/2.  
NOTE 4: Defined as skew between outputs on different devices operating at the same supply voltage, same temperature, same frequency  
and with equal load conditions. Using the same type of inputs on each device, the outputs are measured at VDDO_A/2.  
©2016 Integrated Device Technology, Inc.  
7
Revison C, November 2, 2016  
8V49N231 Datasheet  
Table 6B. LVDS AC Electrical Characteristics, V = V  
= V  
= V  
= V  
= 3.3V ± 5%, T = -40°C to 85°C.  
DD  
DD_XTAL  
DDD  
DDO_B  
DDO_C5 A  
Symbol Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
fOUT  
Output frequency  
100  
125  
MHz  
f
OUT = 100MHz,  
265  
325  
475  
fs  
fs  
Integration Range (12kHz to 20MHz)  
RMS Phase Jitter (Random);  
NOTE 1  
tJIT  
fOUT = 125MHz,  
Integration Range (12kHz to 20MHz)  
311  
n(100)  
n(1k)  
100Hz from carrier  
1kHz from carrier  
10kHz from carrier  
100kHz from carrier  
1MHz from carrier  
10MHz from carrier  
fOUT = 100MHz  
-104  
-126  
-134  
-138  
-147  
-155  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
ps  
n(10k)  
n(100k)  
n(1M)  
n(10M)  
Single-side Band Phase  
Noise for fout = 125MHz  
20  
20  
tJIT(cc)  
Cycle-to-Cycle Jitter; NOTE 2  
fOUT = 125MHz  
ps  
tsk(o)  
odc  
Output Skew; NOTE 2, 3  
Output Duty Cycle  
Output Rise/ Fall Time  
Valid to HZ  
70  
ps  
47  
50  
214  
4
53  
%
tR / tF  
tHZ  
20% to 80%  
100  
450  
ps  
ns  
tVALID  
HZ to valid  
600  
ns  
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device  
is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal  
equilibrium has been reached under these conditions.  
NOTE: Data taken in PLL mode.  
NOTE 1: Refer to the phase noise plots.  
NOTE 2: This parameter is defined in accordance with JEDEC Standard 65.  
NOTE 3: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at the differential crosspoint.  
NOTE 4: Defined as skew between outputs on different devices operating at the same supply voltage, same temperature, same frequency  
and with equal load conditions. Using the same type of inputs on each device, the outputs are measured at differential crosspoint.  
©2016 Integrated Device Technology, Inc.  
8
Revison C, November 2, 2016  
8V49N231 Datasheet  
Table 6C. HCSL AC Electrical Characteristics, V = V  
= V  
= V  
= 3.3V ± 5%, T = -40°C to 85°C  
DDO_C A  
DD  
DD_XTAL  
DDD  
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
fOUT  
Output frequency  
100  
MHz  
RMS Phase Jitter (Random);  
NOTE 1  
fOUT = 100MHz,  
Integration Range (12kHz to 20MHz)  
tJIT  
325  
400  
fs  
n(100)  
n(1k)  
100Hz from carrier  
-105  
-126  
-138  
-139  
-147  
-152  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
1kHz from carrier  
n(10k)  
n(100k)  
n(1M)  
n(10M)  
10kHz from carrier  
Single-side Band Phase  
Noise for fout = 100MHz  
100kHz from carrier  
1MHz from carrier  
10MHz from carrier  
Cycle-to-Cycle Jitter;  
NOTE 2  
tJIT(CC)  
f
OUT = 100MHz  
10  
20  
60  
ps  
tsk(o)  
tHZ  
Output Skew; NOTE 2, 3  
Valid to HZ  
ps  
ns  
ns  
16  
37  
tVALID  
HZ to Valid  
Absolute Maximum Output  
Voltage; NOTE 5, 6  
VMAX  
1150  
mV  
mV  
mV  
mV  
Absolute Minimum Output  
Voltage; NOTE 5, 7  
VMIN  
-150  
250  
Absolute Crossing Voltage;  
NOTE 4, 7, 8  
VCROSS  
VCROSS  
550  
140  
Total Variation of VCROSS  
over all edges; NOTE 5, 8, 9  
VDDO_A  
Rise/Fall Edge Rate;  
NOTE 11, 12  
Measured between  
-150mV to +150mV  
tSLEW  
±
0.6  
47  
4.0  
53  
V/ns  
%
odc  
Output Duty Cycle  
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device  
is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal  
equilibrium has been reached under these conditions.  
NOTE: Data taken in PLL mode.  
NOTE 1: Refer to the phase noise plots.  
NOTE 2: This parameter is defined in accordance with JEDEC Standard 65.  
NOTE 3: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at the differential crosspoint.  
NOTE 4: Defined as skew between outputs on different devices operating at the same supply voltage, same temperature, same frequency  
and with equal load conditions. Using the same type of inputs on each device, the outputs are measured at the differential crosspoint.  
NOTE 5: Measurement taken from single-ended waveform.  
NOTE 6: Defined as the maximum instantaneous voltage including overshoot.  
NOTE 7: Defined as the minimum instantaneous voltage including undershoot. See Parameter Measurement Information Section.  
NOTE 8: Measured at crosspoint where the instantaneous voltage value of the rising edge of QCx equals the falling edge of nQCx. See  
Parameter Measurement Information Section.  
NOTE 9: Refers to the total variation from the lowest crosspoint to the highest, regardless of which edge is crossing. Refers to all crosspoints  
for this measurement. See Parameter Measurement Information Section.  
NOTE 12: Defined as the total variation of all crossing voltage of rising QCx and falling nQCx. This is the maximum allowed variance in the  
VCROSS for any particular system. See Parameter Measurement Information Section.  
NOTE 11: Measurement taken from a differential waveform.  
NOTE 12: Measured from -150mV to +150mV on the differential waveform (derived from QCx minus nQCx). The signal must be monotonic  
through the measurement region for rise and fall time. The 300mV measurement window is centered on the differential zero crossing. See  
Parameter Measurement Information Section.  
©2016 Integrated Device Technology, Inc.  
9
Revison C, November 2, 2016  
8V49N231 Datasheet  
Table 6D. PCI Express Jitter Specifications, V = V  
= V  
= V  
= 3.3V ± 5%, T = -40°C to 85°C  
DD  
DD_XTAL  
DDD  
DDO_C  
A
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum PCIe Industry Units  
Specification  
Phase Jitter  
Peak-to-Peak;  
NOTE 1, 4  
ƒ = 100MHz, 25MHz Crystal Input  
Evaluation Band: 0Hz - Nyquist  
(clock frequency/2)  
tj  
9
14  
86  
ps  
(PCIe Gen 1)  
ƒ = 100MHz, 25MHz Crystal Input  
High Band: 1.5MHz - Nyquist  
(clock frequency/2)  
tREFCLK_HF_RMS Phase Jitter  
0.73  
0.04  
0.16  
1.0  
0.5  
0.2  
3.1  
3.0  
0.8  
ps  
ps  
ps  
(PCIe Gen 2)  
RMS; NOTE 2, 4  
tREFCLK_LF_RMS Phase Jitter  
ƒ = 100MHz, 25MHz Crystal Input  
Low Band: 10kHz - 1.5MHz  
(PCIe Gen 2)  
RMS; NOTE 2, 4  
ƒ = 100MHz, 25MHz Crystal Input  
Evaluation Band: 0Hz - Nyquist  
(clock frequency/2)  
tREFCLK_RMS  
(PCIe Gen 3)  
Phase Jitter  
RMS; NOTE 3, 4  
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device  
is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal  
equilibrium has been reached under these conditions. For additional information, refer to the PCI Express Application Note section in the  
datasheet.  
NOTE 1: Peak-to-Peak jitter after applying system transfer function for the Common Clock Architecture. Maximum limit for PCI Express  
Gen 1 is 86ps peak-to-peak for a sample size of 106 clock periods.  
NOTE 2: RMS jitter after applying the two evaluation bands to the two transfer functions defined in the Common Clock Architecture and  
reporting the worst case results for each evaluation band. Maximum limit for PCI Express Generation 2 is 3.1ps RMS for tREFCLK_HF_RMS  
(High Band) and 3.0ps RMS for tREFCLK_LF_RMS (Low Band).  
NOTE 3: RMS jitter after applying system transfer function for the common clock architecture. This specification is based on the PCI Express  
Base Specification Revision 0.7, October 2009 and is subject to change pending the final release version of the specification.  
NOTE 4: This parameter is guaranteed by characterization. Not tested in production.  
©2016 Integrated Device Technology, Inc.  
10  
Revison C, November 2, 2016  
8V49N231 Datasheet  
Typical Phase Noise at 100MHz, Bank C output  
Offset Frequency (HZ)  
©2016 Integrated Device Technology, Inc.  
11  
Revison C, November 2, 2016  
8V49N231 Datasheet  
Typical Phase Noise at 125MHz, Bank B output  
Offset Frequency (HZ)  
©2016 Integrated Device Technology, Inc.  
12  
Revison C, November 2, 2016  
8V49N231 Datasheet  
Typical Phase Noise at 133.33MHz, Bank A output  
Offset Frequency (HZ)  
©2016 Integrated Device Technology, Inc.  
13  
Revison C, November 2, 2016  
8V49N231 Datasheet  
Parameter Measurement Information  
2.04V±5%  
0.9V±5%  
3.3V 5ꢀ  
1.8V 5ꢀ  
2.04V±5%  
Ferrite  
Bead  
V
DDO_A  
SCOPE  
V
V
V
V
DD  
V
V
V
DD  
DDD  
DD_XTAL  
V
DDD  
DD_XTAL  
DDO_X  
V
DDA  
DDO_A  
V
DDA  
Qx  
V
DDO_X  
GND_X  
-0.9V±5%  
VDDO_x denotes VDDO_B, VDDO_C, VDDO_5  
VDDO_x denotes VDDO_B, VDDO_C, VDDO_5  
LVCMOS Output Load Test Circuit  
LVDS Output Load Test Circuit  
3.3V±5%  
3.3V±5%  
1.8V±5%  
3.3V±5%  
1.8V±5%  
3.3V±5%  
Measurement  
Point  
V
V
V
V
V
DDO_A  
V
DD  
DDD  
DD_XTAL  
DDO_X  
V
V
V
V
V
DD  
DDO_A  
V
DDA  
DDD  
DD_XTAL  
DDO_X  
DDA  
2pF  
Measurement  
Point  
IREF  
IREF  
GND  
0V  
GND  
0V  
2pF  
0V  
0V  
VDDO_x denotes VDDO_B, VDDO_C, VDDO_5  
VDDO_x denotes VDDO_B, VDDO_C, VDDO_5  
HCSL Output Load Test Circuit  
HCSL Output Load Test Circuit  
nQx  
Qx  
VDDO_A  
2
Qx  
nQy  
Qy  
VDDO_A  
2
Qy  
tsk(o)  
LVCMOS Output Skew  
Output Skew (Differential Outputs)  
©2016 Integrated Device Technology, Inc.  
14  
Revison C, November 2, 2016  
8V49N231 Datasheet  
Parameter Measurement Information, continued  
nQXx  
QXx  
VDDO_A  
2
VDDO_A  
2
VDDO_A  
2
QAx  
tcycle n  
tcycle n+1  
tcycle n  
tcycle n+1  
tjit(cc) = tcycle n – tcycle n+1  
|
|
tjit(cc) = tcycle n – tcycle n+1  
|
|
1000 Cycles  
1000 Cycles  
Cycle-to-Cycle Jitter (LVCMOS Output)  
Cycle-to-Cycle Jitter (Differential Output)  
nQXx  
80%  
tF  
80%  
tR  
80%  
80%  
tR  
VOD  
20%  
20%  
20%  
20%  
QAx  
QXx  
tF  
LVCMOS Output Rise/Fall Time  
LVDS Output Rise/Fall Time  
nQBx,  
nQC5  
VDDO_A  
2
QAx  
QBx,  
QC5  
tPW  
tPERIOD  
tPW  
tPERIOD  
x 100%  
odc =  
LVCMOS Output Duty Cycle  
Differential Output Duty Cycle  
HCSL Output Points for Rise/Fall Edge Rate  
Differential Measurement Points for Duty Cycle/Period  
©2016 Integrated Device Technology, Inc.  
15  
Revison C, November 2, 2016  
8V49N231 Datasheet  
Parameter Measurement Information, continued  
Differential Output Voltage Setup  
Offset Voltage Setup  
Single-ended Measurement Points for Delta Crosspoint  
Single-ended Measurement Points for Absolute  
Crosspoint/Swing  
RMS Phase Jitter  
©2016 Integrated Device Technology, Inc.  
16  
Revison C, November 2, 2016  
8V49N231 Datasheet  
Applications Information  
Overdriving the XTAL Interface  
The XTAL_IN input can be overdriven by an LVCMOS driver or by  
one side of a differential driver through an AC coupling capacitor. The  
XTAL_OUT pin can be left floating. The amplitude of the input signal  
should be between 500mV and 1.8V and the slew rate should not be  
less than 0.2V/ns. For 3.3V LVCMOS inputs, the amplitude must be  
reduced from full swing to at least half the swing in order to prevent  
signal interference with the power rail and to reduce internal noise.  
Figure 1A shows an example of the interface diagram for a high  
speed 3.3V LVCMOS driver. This configuration requires that the sum  
of the output impedance of the driver (Ro) and the series resistance  
(Rs) equals the transmission line impedance. In addition, matched  
termination at the crystal input will attenuate the signal in half. This  
can be done in one of two ways. First, R1 and R2 in parallel should  
equal the transmission line impedance. For most 50applications,  
R1 and R2 can be 100. This can also be accomplished by removing  
R1 and changing R2 to 50. The values of the resistors can be  
increased to reduce the loading for a slower and weaker LVCMOS  
driver. Figure 1B shows an example of the interface diagram for an  
LVPECL driver. This is a standard LVPECL termination with one side  
of the driver feeding the XTAL_IN input. It is recommended that all  
components in the schematics be placed in the layout. Though some  
components might not be used, they can be utilized for debugging  
purposes. The datasheet specifications are characterized and  
guaranteed by using a quartz crystal as the input.  
VCC  
XTAL_OUT  
R1  
100  
C1  
Rs  
Zo = 50 ohms  
Ro  
XTAL_IN  
.1uf  
R2  
100  
Zo = Ro + Rs  
LVCMOS Driver  
Figure 1A. General Diagram for LVCMOS Driver to XTAL Input Interface  
XTAL_OUT  
C2  
Zo = 50 ohms  
XTAL_I N  
.1uf  
Zo = 50 ohms  
R1  
50  
R2  
50  
LVPECL Driver  
R3  
50  
Figure 1B. General Diagram for LVPECL Driver to XTAL Input Interface  
©2016 Integrated Device Technology, Inc.  
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Revison C, November 2, 2016  
8V49N231 Datasheet  
Recommendations for Unused Input and Output Pins  
Inputs:  
Outputs:  
LVCMOS Control Pins  
LVCMOS Outputs  
All control pins have internal pullup or pulldown resistors; additional  
resistance is not required but can be added for additional protection.  
A 1kresistor can be used.  
All unused LVCMOS outputs can be left floating. There should be no  
trace attached.  
LVDS Outputs  
All unused LVDS outputs can be either left floating or terminated with  
100across. If they are left floating, there should be no trace  
attached.  
HCSL Outputs  
All unused differential outputs can be left floating. We recommend  
that there is no trace attached. Both sides of the differential output  
pair should either be left floating or terminated.  
LVDS Driver Termination  
For a general LVDS interface, the recommended value for the  
termination impedance (ZT) is between 90and 132. The actual  
value should be selected to match the differential impedance (Z0) of  
your transmission line. A typical point-to-point LVDS design uses a  
100parallel resistor at the receiver and a 100differential  
transmission-line environment. In order to avoid any  
transmission-line reflection issues, the components should be  
surface mounted and must be placed as close to the receiver as  
possible. IDT offers a full line of LVDS compliant devices with two  
types of output structures: current source and voltage source. The  
standard termination schematic as shown in Figure 2A can be used  
with either type of output structure. Figure 2B, which can also be  
used with both output types, is an optional termination with center tap  
capacitance to help filter common mode noise. The capacitor value  
should be approximately 50pF. If using a non-standard termination, it  
is recommended to contact IDT and confirm if the output structure is  
current source or voltage source type. In addition, since these  
outputs are LVDS compatible, the input receiver’s amplitude and  
common-mode input range should be verified for compatibility with  
the output.  
ZO ZT  
LVDS  
Receiver  
LVDS  
Driver  
ZT  
Figure 2A. Standard Termination  
ZT  
ZO ZT  
LVDS  
LVDS  
2
ZT  
2
Receiver  
Driver  
C
Figure 2B. Optional Termination  
LVDS Termination  
©2016 Integrated Device Technology, Inc.  
18  
Revison C, November 2, 2016  
8V49N231 Datasheet  
Recommended Termination  
Figure 3A is the recommended source termination for applications  
where the driver and receiver will be on a separate PCBs. This  
termination is the standard for PCI Express™ and HCSL output  
types. All traces should be 50impedance single-ended or 100  
differential.  
Rs  
0.5" Max  
L1  
0-0.2"  
L2  
1-14"  
L4  
0.5 - 3.5"  
L5  
22 to 33 +/-5%  
L1  
L2  
L4  
L5  
PCI Express  
Connector  
PCI Express  
Driver  
PCI Express  
Add-in Card  
0-0.2" L3  
L3  
49.9 +/- 5%  
Rt  
Figure 3A. Recommended Source Termination (where the driver and receiver will be on separate PCBs)  
Figure 3B is the recommended termination for applications where a  
point-to-point connection can be used. A point-to-point connection  
contains both the driver and the receiver on the same PCB. With a  
matched termination at the receiver, transmission-line reflections will  
be minimized. In addition, a series resistor (Rs) at the driver offers  
flexibility and can help dampen unwanted reflections. The optional  
resistor can range from 0to 33. All traces should be 50  
impedance single-ended or 100differential.  
Rs  
0.5" Max  
L1  
0-18"  
L2  
0-0.2"  
L3  
0 to 33  
0 to 33  
L1  
L2  
L3  
PCI Express  
Driver  
49.9 +/- 5%  
Rt  
Figure 3B. Recommended Termination (where a point-to-point connection can be used)  
©2016 Integrated Device Technology, Inc.  
19  
Revison C, November 2, 2016  
8V49N231 Datasheet  
VFQFN EPAD Thermal Release Path  
In order to maximize both the removal of heat from the package and  
the electrical performance, a land pattern must be incorporated on  
the Printed Circuit Board (PCB) within the footprint of the package  
corresponding to the exposed metal pad or exposed heat slug on the  
package, as shown in Figure 4. The solderable area on the PCB, as  
defined by the solder mask, should be at least the same size/shape  
as the exposed pad/slug area on the package to maximize the  
thermal/electrical performance. Sufficient clearance should be  
designed on the PCB between the outer edges of the land pattern  
and the inner edges of pad pattern for the leads to avoid any shorts.  
and dependent upon the package power dissipation as well as  
electrical conductivity requirements. Thus, thermal and electrical  
analysis and/or testing are recommended to determine the minimum  
number needed. Maximum thermal and electrical performance is  
achieved when an array of vias is incorporated in the land pattern. It  
is recommended to use as many vias connected to ground as  
possible. It is also recommended that the via diameter should be 12  
to 13mils (0.30 to 0.33mm) with 1oz copper via barrel plating. This is  
desirable to avoid any solder wicking inside the via during the  
soldering process which may result in voids in solder between the  
exposed pad/slug and the thermal land. Precautions should be taken  
to eliminate any solder voids between the exposed heat slug and the  
land pattern. Note: These recommendations are to be used as a  
guideline only. For further information, please refer to the Application  
Note on the Surface Mount Assembly of Amkor’s  
While the land pattern on the PCB provides a means of heat transfer  
and electrical grounding from the package to the board through a  
solder joint, thermal vias are necessary to effectively conduct from  
the surface of the PCB to the ground plane(s). The land pattern must  
be connected to ground through these vias. The vias act as “heat  
pipes”. The number of vias (i.e. “heat pipes”) are application specific  
Thermally/Electrically Enhance Leadframe Base Package, Amkor  
Technology.  
SOLDER  
SOLDER  
PIN  
PIN  
EXPOSED HEAT SLUG  
PIN PAD  
GROUND PLANE  
LAND PATTERN  
(GROUND PAD)  
PIN PAD  
THERMAL VIA  
Figure 4. P.C. Assembly for Exposed Pad Thermal Release Path – Side View (drawing not to scale)  
©2016 Integrated Device Technology, Inc.  
20  
Revison C, November 2, 2016  
8V49N231 Datasheet  
PCI Express Application Note  
PCI Express jitter analysis methodology models the system  
response to reference clock jitter. The block diagram below shows  
the most frequently used Common Clock Architecture in which a  
copy of the reference clock is provided to both ends of the PCI  
Express Link.  
In the jitter analysis, the transmit (Tx) and receive (Rx) serdes PLLs  
are modeled as well as the phase interpolator in the receiver. These  
transfer functions are called H1, H2, and H3 respectively. The overall  
system transfer function at the receiver is:  
Hts= H3s  H1s– H2s  
The jitter spectrum seen by the receiver is the result of applying this  
system transfer function to the clock spectrum X(s) and is:  
Ys= Xs  H3s  H1s– H2s  
PCIe Gen 2A Magnitude of Transfer Function  
In order to generate time domain jitter numbers, an inverse Fourier  
Transform is performed on X(s)*H3(s) * [H1(s) - H2(s)].  
PCI Express Common Clock Architecture  
For PCI Express Gen 1, one transfer function is defined and the  
evaluation is performed over the entire spectrum: DC to Nyquist (e.g  
for a 100MHz reference clock: 0Hz – 50MHz) and the jitter result is  
reported in peak-peak.  
PCIe Gen 2B Magnitude of Transfer Function  
For PCI Express Gen 3, one transfer function is defined and the  
evaluation is performed over the entire spectrum. The transfer  
function parameters are different from Gen 1 and the jitter result is  
reported in RMS.  
PCIe Gen 1 Magnitude of Transfer Function  
For PCI Express Gen 2, two transfer functions are defined with 2  
evaluation ranges and the final jitter number is reported in rms. The  
two evaluation ranges for PCI Express Gen 2 are 10kHz – 1.5MHz  
(Low Band) and 1.5MHz – Nyquist (High Band). The plots show the  
individual transfer functions as well as the overall transfer function Ht.  
PCIe Gen 3 Magnitude of Transfer Function  
For a more thorough overview of PCI Express jitter analysis  
methodology, please refer to IDT Application Note PCI Express  
Reference Clock Requirements.  
©2016 Integrated Device Technology, Inc.  
21  
Revison C, November 2, 2016  
8V49N231 Datasheet  
Schematic Layout  
Figure 5 shows an example 8V49N231 application schematic. The  
schematic example focuses on functional connections and is not  
configuration specific. Refer to the pin description and functional  
tables in the datasheet to ensure the logic control inputs are properly  
set. Input and output terminations shown are intended as examples  
only and may not represent the exact user configuration.  
under the crystal, then void enough power and signal planes to  
minimize the coupling capacity. Ensure that the ground under the  
crystal is the same ground as used for the tuning caps and the  
oscillator.  
As with any high speed analog circuitry, the power supply pins are  
vulnerable to random noise. To achieve optimum jitter performance,  
power supply isolation is required. The 8V49N231 provides separate  
The schematic example shows two different HCSL output  
terminations; the standard termination for the case in which the  
HCSL receiver is on the same PCB as the 8V49N231 as well as the  
termination for an attached PCIe add-in card.  
V
V
DD, VDDD, VDDA, VDD_XTAL and VDDO_REF, VDDO_A, VDDO_B  
DDO_C, and VDDO_C5 pins to isolate any high speed switching noise  
,
at the outputs from coupling into the internal PLL.  
In this example a 12pF parallel resonant 25MHz crystal is used with  
load caps C1 = C2 = 10pF. Crystals with other load capacitance  
specifications can be used, for example, a CL=18pF crystal can be  
used with two 22pF tuning capacitors. Depending on the parasitics of  
the printed circuit board layout, the values of C1 and C2 might require  
a slight adjustment to optimize the frequency accuracy. For this  
device, the crystal tuning capacitors are required for proper  
operation.  
In order to achieve the best possible filtering, it is highly  
recommended that the 0.1µF capacitors be placed on the 8V49N231  
side of the PCB as close to the power pins as possible. This is  
represented by the placement of these capacitors in the schematic.  
If space is limited, the ferrite beads, 10µf capacitors and the 0.1µF  
capacitors connected directly to 3.3V can be placed on the opposite  
side of the PCB. If space permits, place all filter components on the  
device side of the board.  
Crystal layout is very important to minimize capacitive coupling  
between the crystal pads and leads and other metal in the circuit  
board. Capacitive coupling to other conductors has two adverse  
effects. The first is that it reduces the oscillator frequency, leaving  
less tuning margin. Second, noise on power planes and logic  
transitions on signal traces can pull the phase of voltages on the  
XTAL_IN and XTAL_OUT pins of the oscillator.  
Power supply filter recommendations are a general guideline to be  
used for reducing external noise from coupling into the devices. The  
filter performance is designed for a wide range of noise frequencies.  
This low-pass filter starts to attenuate noise at approximately 10 kHz.  
If a specific frequency noise component is known, such as switching  
power supplies frequencies, it is recommended that component  
values be adjusted and if required, additional filtering be added.  
Additionally, good general design practices for power plane voltage  
stability suggests adding bulk capacitance in the local area of all  
devices.  
Using a crystal on the top layer as an example, void all signal and  
power layers under the crystal, XTAL_IN, XTAL_OUT and the input  
pins of the 8V49N231 between the top layer and the ground plane for  
the 8V49N231. If the ground plane for the 8V49N231 is the first layer  
©2016 Integrated Device Technology, Inc.  
22  
Revison C, November 2, 2016  
8V49N231 Datasheet  
3.3V  
3.3V  
FB1  
FB3  
1
2
2
1
U1  
BLM18BB221SN1  
BLM18BB221SN1  
9
C7  
0.1uF  
C8  
10uF  
C27  
0.1uF  
VDDO_A  
VDDO_A  
C21  
10uF  
C20  
0.1uF  
55  
C17  
0.1uF  
12  
49  
36  
42  
VDD  
VDDD  
VDDO_B  
VDDO_B  
VDD  
15  
20  
28  
C10  
0.1uF  
VDDO_C  
VDDO_C  
VDDO_C  
3.3V  
C26  
0.1uF  
C16  
0.1uF  
C11  
0.1uF  
29  
C23  
0.1uF  
C24  
0.1uF  
C25  
0.1uF  
VDDO_C5  
Place 0.1uF bypass cap  
directly adjacent to the  
corresponding VDDO pin.  
C28  
0.1uF  
FB2  
BLM18BB221SN1  
C22  
0.1uF  
R1  
Zo = 50 Ohm  
54  
53  
R17  
QA0  
QA0  
QA1  
2
VDDA  
VDDA  
33  
1
QA1  
C9  
10uF  
C12  
0.1uF  
LVCMOS Termination  
LVCMOS Receiver  
R16  
VDD_XTAL  
7
Zo = 50 Ohm  
VDD_XTAL  
+
41  
40  
10  
C6  
10uF  
QB0  
QB0  
C13  
0.1uF  
R2  
100  
nQB0  
nQB0  
Zo = 50 Ohm  
-
FOX 603-25-173  
5
6
LVDS Receiver  
XTAL_IN  
XTAL_IN  
38  
37  
QB1  
nQB1  
1
QB1  
nQB1  
25 MHz  
(12pF)  
LVDS Termination  
2
4
Zo = 50 Ohm  
X2  
XTAL_OUT  
XTAL_OUT  
35  
34  
QB2  
QB2  
+
3
C1  
10pF  
nQB2  
R3  
100  
C2  
10pF  
nQB2  
Zo = 50 Ohm  
-
LVDS Receiver  
0" to 18"  
14  
IREF  
R18  
475  
R8  
R7  
33  
33  
Zo = 50 Ohm  
16  
17  
QC0  
QC0  
+
nQC0  
nQC0  
51  
50  
44  
45  
46  
47  
BYPASS  
Zo = 50 Ohm  
BYPASS  
FSEL  
-
FSEL  
OE_1  
Optional  
18  
19  
QC1  
nQC1  
HCSL_Receiver  
OE_1  
OE_2  
OE_3  
OE_4  
QC1  
nQC1  
R13  
50  
R10  
50  
OE_2  
OE_3  
OE_4  
PCI Express  
Point-to-Point  
Connection  
21  
22  
QC2  
nQC2  
QC2  
nQC2  
HCSL Termination  
10  
52  
nc  
nc  
11  
4
24  
25  
QC3  
nQC3  
GND_REFOUT  
GND_XTAL  
QC3  
nQC3  
1" to 14"  
13  
3
8
43  
48  
56  
GNDD  
GND  
GND  
GND  
GND  
GND  
0.5" to 3.5"  
R11  
33  
33  
Zo = 50 Ohm  
Zo = 50 Ohm  
26  
27  
QC4  
QC4  
+
nQC4  
nQC4  
R14  
Zo = 50 Ohm  
Zo = 50 Ohm  
1
33  
39  
23  
32  
GNDA  
-
VSSO_B  
VSSO_B  
VSSO_C  
VSSO_C5  
31  
30  
QC5  
R12  
50  
R9  
50  
HCSL_Receiver  
QC5  
nQC5  
PCI Express Add-In Card  
nQC5  
57  
ePAD  
Zo = 50 Ohm  
+
R15  
100  
Logic Control Input Examples  
Zo = 50 Ohm  
-
Set Logic  
Input to '1'  
Set Logic  
Input to '0'  
VDD  
VDD  
LVDS Receiver  
RU1  
1k  
RU2  
Not Install  
To Logic  
Input  
pins  
To Logic  
Input  
pins  
RD1  
Not Install  
RD2  
1k  
Figure 5. 8V49N231 Schematic Example  
©2016 Integrated Device Technology, Inc.  
23  
Revison C, November 2, 2016  
8V49N231 Datasheet  
Power Considerations  
This section provides information on power dissipation and junction temperature for the 8V49N231.  
Equations and example calculations are also provided.  
1. Power Dissipation.  
The total power dissipation for the 8V49N231 is the sum of the core power plus analog power plus the power dissipation due to loading.  
The following is the power dissipation for VDD = 3.3V + 5% = 3.465V, which gives worst case results at 85°C.  
NOTE: Please refer to Section 3 for details on calculating power dissipated in the outputs.  
Power (coreM) AX = VDD_MAX * (IDD_MAX + IDDA_MAX) = 3.465V * (132mA + 58mA) = 658.35mW  
The maximum current at 85°C is as follows  
IDD_MAX = 132mA  
IDDA_max = 58mA  
IDDO_A = 15mA  
IDDO_x = 97mA  
(IDDO_x denote IDDO_B+IDDO_C+IDDO_C5)  
HCSL Output Power (outputM) AX = 44.5mW/Loaded Output pair  
If all outputs are loaded, the total power is 5 * 44.5mW = 222.5mW  
LVDS and LVCMOS Outputs Power (output)MAX = 3.465V * 97mA + 1.89V * 15mA = 364.455mW  
Total Power_MAX = 658.35mW + 222.5mW + 364.455mW = 1245.31mW  
2. Junction Temperature.  
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad directly affects the reliability of the device. The  
maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond  
wire and bond pad temperature remains below 125°C.  
The equation for Tj is as follows: Tj = JA * Pd_total + TA  
Tj = Junction Temperature  
JA = Junction-to-Ambient Thermal Resistance  
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)  
TA = Ambient Temperature  
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance JA must be used. Assuming no air flow and  
a multi-layer board, the appropriate value is 30.5°C/W per Table 7 below.  
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:  
85°C + 1.25W * 30.5°C/W = 123°C. This is below the limit of 125°C.  
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of  
board (multi-layer).  
Table 7. Thermal Resistance for 56-Lead VFQFN, Forced Convection  
JA  
JA vs. Air Flow  
Meters per Second  
0
1
2
Multi-Layer PCB, JEDEC Standard Test Boards  
30.5°C/W  
26.4°C/W  
24.7°C/W  
©2016 Integrated Device Technology, Inc.  
24  
Revison C, November 2, 2016  
8V49N231 Datasheet  
3. Calculations and Equations.  
The purpose of this section is to calculate power dissipation on the IC per HCSL output pairs.  
HCSL output driver circuit and termination are shown in Figure 6.  
VDDO  
IOUT = 17mA  
VOUT  
RREF  
=
475  
± 1%  
RL  
50Ω  
IC  
Figure 6. HCSL Driver Circuit and Termination  
HCSL is a current steering output which sources a maximum of 17mA of current per output. To calculate worst case on-chip power dissipation,  
use the following equations which assume a 50load to ground.  
The highest power dissipation occurs at VDD MAX.  
_
Power = (VDD_MAX – VOUT) * IOUT  
since VOUT = IOUT * RL  
Power = (VDD_MAX – IOUT * RL) * IOUT  
= (3.465V – 17mA * 50) * 17mA  
Total Power Dissipation per output pair = 44.5mW  
©2016 Integrated Device Technology, Inc.  
25  
Revison C, November 2, 2016  
8V49N231 Datasheet  
Reliability Information  
Table 8. vs. Air Flow Table for a 56-Lead VFQFN  
JA  
JA vs. Air Flow  
Meters per Second  
0
1
2
Multi-Layer PCB, JEDEC Standard Test Boards  
30.5 °C/W  
26.4°C/W  
24.7°C/W  
Transistor Count  
The transistor count for 8V49N231 is: 178,395  
©2016 Integrated Device Technology, Inc.  
26  
Revison C, November 2, 2016  
8V49N231 Datasheet  
56-Lead VFQFN Package Outline and Package Dimensions  
©2016 Integrated Device Technology, Inc.  
27  
Revison C, November 2, 2016  
8V49N231 Datasheet  
56-Lead VFQFN Package Outline and Package Dimensions, continued  
©2016 Integrated Device Technology, Inc.  
28  
Revison C, November 2, 2016  
8V49N231 Datasheet  
56-Lead VFQFN Package Outline and Package Dimensions, continued  
©2016 Integrated Device Technology, Inc.  
29  
Revison C, November 2, 2016  
8V49N231 Datasheet  
56-Lead VFQFN Package Outline and Package Dimensions, continued  
©2016 Integrated Device Technology, Inc.  
30  
Revison C, November 2, 2016  
8V49N231 Datasheet  
Ordering Information  
Table 9. Ordering Information Table  
Part/Order Number  
8V49N231NLGI  
Marking  
Package  
Shipping Packaging  
Tray  
Temperature  
-40C to 85C  
-40C to 85C  
IDT8V49N231NLGI  
IDT8V49N231NLGI  
Lead-Free, 56-lead VFQFN  
Lead-Free, 56-lead VFQFN  
8V49N231NLGI8  
Tape & Reel  
Revision History Sheet  
Rev  
Table  
Page  
Description of Change  
Updated Application Schematics.  
Date  
23  
B
Deleted part number prefix/suffix throughout the datasheet.  
Updated datasheet header/footer.  
7/24/15  
C
23  
Application Schematic, IDT crystal part number was replaced by FOX part number.  
11/2/16  
Corporate Headquarters  
6024 Silver Creek Valley Road  
San Jose, CA 95138 USA  
www.IDT.com  
Sales  
Tech Support  
www.IDT.com/go/support  
1-800-345-7015 or 408-284-8200  
Fax: 408-284-2775  
www.IDT.com/go/sales  
DISCLAIMER Integrated Device Technology, Inc. (IDT) reserves the right to modify the products and/or specifications described herein at any time, without notice, at IDT's sole discretion. Performance spec-  
ifications and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed in customer products. The information  
contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT's products for any particular purpose, an implied  
warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of  
IDT or any third parties.  
IDT's products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be rea-  
sonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT.  
Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are the property  
of IDT or their respective third party owners. For datasheet type definitions and a glossary of common terms, visit www.idt.com/go/glossary. Integrated Device Technology, Inc. All rights reserved.  
©2016 Integrated Device Technology, Inc  
31  
Revison C, November 2, 2016  
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