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8V49N211NLGI

型号:

8V49N211NLGI

品牌:

IDT[ INTEGRATED DEVICE TECHNOLOGY ]

页数:

33 页

PDF大小:

614 K

Clock Generator for Broadcom Processor  
8V49N211  
DATA SHEET  
General Description  
Features  
The 8V49N211 is a high-performance PLL-based clock generator  
designed to interface with Broadcom XLP2xxx processors. The  
8V49N211 has one 25MHz crystal input to generate output  
frequencies to support XLP Core/DDR3, USB, SGMII/XAUI and  
PCIe reference clocks in a single chip. The 8V49N211 low jitter VCO  
easily meets PCI Express Gen 1, 2 and 3 requirements.  
Fourth Generation FemtoClock® NG PLL technology  
Two LVCMOS clock outputs for core/DDR3 at 133.33MHz or  
66.66MHz  
One LVDS clock output for USB at 100MHz  
Three LVDS clock outputs for SGMII/XAUI at 125MHz  
Five HCSL clock outputs for PCIe at 100MHz  
IDT’s Fourth Generation FemtoClock® NG technology has best in  
class phase noise performance.  
Crystal oscillator interface designed for 25MHz (CL = 12pF)  
frequency, IDT Part #603-25-173  
PCI Express Gen 1 (2.5Gb/s), Gen 2 (5Gb/s) and Gen 3 (8Gb/s)  
jitter compliant  
Full 3.3V operating supply voltage  
Lead-free (RoHS 6) packaging  
-40°C to 85°C ambient operating temperature  
Pin Assignment  
42 41 40 39 38 37 36 35 34 33 32 31 30 29  
GND 43  
44  
28 VDDO_C  
27  
VS S O_A  
nQC4  
QA1 45  
QA0 46  
26 QC4  
25 nQC3  
24 QC3  
23 VS S O_C  
22 nQC2  
21 QC2  
20 VDDO_C  
19 nQC1  
18 QC1  
47  
FS E L 48  
VDDO_A  
BYPAS S  
49  
VDD 50  
GND 51  
8V49N211  
52  
OE _2 53  
54  
OE _1  
OE _3  
17  
nQC0  
16 QC0  
OE _4 55  
GND 56  
15 VDDO_C  
1
2 3 4 5 6 7 8 9 10 11 12 13 14  
56 Lead 8mm x 8mm VFQFN  
REVISION B 05/29/15  
1
©2015 INTEGRATED DEVICE TECHNOLOGY, INC.  
8V49N211 DATA SHEET  
Block Diagram  
REFOUT  
Pullup  
OE_1  
QA0  
QA1  
Bank A  
0 = 133.33MHz  
1 = 66.66MHz  
LVCMOS  
LVCMOS  
(Core/  
DDR3)  
Pulldown  
FSEL  
Pullup  
OE_2  
QB0  
LVDS  
LVDS  
LVDS  
Pulldown  
nQB0  
BYPASS  
(SGMII/  
XAUI/  
RXAUI)  
QB1  
Bank B  
125MHz  
nQB1  
XTAL_IN  
Phase  
Detector +  
Charge  
Pump  
® NG  
FemtoClock  
VCO  
Xtal  
Osc  
25MHz  
QB2  
1
0
nQB2  
XTAL_OUT  
QC0  
nQC0  
HCSL  
HCSL  
QC1  
Feedback  
Divider  
nQC1  
QC2  
HCSL  
HCSL  
Bank C  
100MHz  
nQC2  
IREF  
(PCIe)  
QC3  
nQC3  
QC4  
HCSL  
LVDS  
nQC4  
QC5  
Pullup  
OE_4  
(USB)  
nQC5  
Pullup  
OE_3  
REVISION B 05/29/15  
2
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
Pin Descriptions and Characteristics  
Table 1. Pin Descriptions  
Number  
Name  
GNDA  
Type  
Description  
1
Power  
Power  
Power  
Power  
Analog ground pin.  
Analog power supply pin.  
Power supply ground pins.  
XTAL ground pin.  
2
VDDA  
3, 8, 43, 51, 56  
4
GND  
GND_XTAL  
5
6
XTAL_IN,  
XTAL_OUT  
Parallel resonant crystal interface. XTAL_IN is the input, XTAL_OUT is  
the output.  
Input  
7
VDD_XTAL  
VDDO_REFOUT  
REFOUT  
Power  
Power  
Output  
Power  
Power  
XTAL power supply pin.  
9
REFOUT LVCMOS output supply pin.  
Reference clock output from crystal. LVCMOS/LVTTL interface levels.  
REFOUT LVCMOS output ground pin.  
Digital power supply pin.  
10  
11  
12  
13  
GND_REFOUT  
VDDD  
GNDD  
Digital ground pin.  
HCSL current reference resistor output. An external fixed precision resistor  
(475) from this pin to ground provides a reference current used for HCSL  
outputs.  
14  
IREF  
Input  
15, 20, 28  
VDDO_C  
Power  
Bank C HCSL output supply pins.  
16, 17  
18, 19  
21, 22  
24, 25  
26, 27  
QC0, nQC0  
QC1, nQC1  
QC2, nQC2  
QC3, nQC3  
QC4, nQC4  
Output  
Differential output pairs. HCSL interface levels.  
23  
29  
VSSO_C  
VDDO_C5  
nQC5, QC5  
VSSO_C5  
VSSO_B  
Power  
Power  
Output  
Power  
Power  
Bank C HCSL output ground pin.  
Bank C LVDS QC5, nQC5 output power supply pin.  
Differential output pair. HCSL interface levels.  
Bank C LVDS QC5, nQC5 output ground pin.  
Bank B LVDS output ground pin.  
30, 31  
32  
33, 39  
34, 35  
37, 38  
40, 41  
nQB2, QB2  
nQB1, QB1  
nQB0, QB0  
Output  
Differential output pairs. LVDS interface levels.  
36, 42  
44  
VDDO_B  
VSSO_A  
Power  
Power  
Bank B LVDS output supply pins.  
Bank A LVCMOS output ground pin.  
45  
46  
QA1  
QA0  
Output  
Single-ended LVCMOS/LVTTL outputs.  
47  
48  
VDDO_A  
FSEL  
Power  
Input  
Bank A LVCMOS output supply pin.  
Pulldown  
Selects QAx output frequency. See Table 3A. Frequency Select Table”.  
REVISION B 05/29/15  
3
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
Number  
49  
Name  
BYPASS  
VDD  
Type  
Pulldown  
Description  
PLL Bypass mode select pin. See Table 3C for function.  
LVCMOS/LVTTL interface levels.  
Input  
Power  
Input  
50  
Power supply pin.  
52, 53,  
54, 55  
OE_1, OE_2  
OE_3, OE_4  
Output enable. LVCMOS/LVTTL interface levels. See Table 3B. OE  
Function Table”.  
Pullup  
NOTE: Pulldown and Pullup refers to an internal input resistor. See Table 2, Pin Characteristics, for typical values.  
Table 2. Pin Characteristics  
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
3.5  
Maximum  
Units  
pF  
CIN  
Input Capacitance  
XTAL_IN, XTAL_OUT not included  
RPULLDOWN Input Pulldown Resistor  
51  
k  
k  
RPULLUP  
Input Pullup Resistor  
51  
QA[0:1]  
V
DDO_A = 3.465V  
14  
ROUT  
Output Impedance  
REFOUT  
VDDO_REFOUT = 3.465V  
30  
Function Tables  
Table 3A. Frequency Select Table  
Table 3B. OE Function Table  
FSEL  
0 (default)  
1
QAx outputs  
133.33MHz  
66.66MHz  
OEx  
0
Output State  
High Impedance  
Enabled  
1(default)  
Table 3C. PLL BYPASS Function Table  
BYPASS  
Operation  
PLL is bypassed. The reference frequency is divided by the selected output dividers in Bank A, Bank B,  
Bank C. AC specifications do not apply in PLL BYPASS mode.  
1
PLL is enabled. The reference frequency is multiplied by the PLL feedback divider and then divided by the  
selected output dividers in Bank A, Bank B, Bank C.  
0 (default)  
REVISION B 05/29/15  
4
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
 
8V49N211 DATA SHEET  
Absolute Maximum Ratings  
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress  
specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC  
Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability.  
Item  
Rating  
Supply Voltage, VDD  
3.63V  
Inputs, VI  
XTAL_IN  
Other Inputs  
0V to 2V  
-0.5V to VDD + 0.5V  
Outputs, VO (LVCMOS)  
-0.5V to VDDO_A + 0.5V  
Outputs, IO (LVDS)  
Continuous Current  
10mA  
15mA  
Outputs, VO (HCSL)  
-0.5V to VDDO_C + 0.5V  
125°C  
Junction Temperature, TJ  
Storage Temperature, TSTG  
-65C to 150C  
DC Electrical Characteristics  
Table 4A. Power Supply DC Characteristics, VDD_X = VDDO_X = 3.3V 5%, TA = -40°C to 85°C  
Symbol Parameter  
VDD_X Power Supply Voltage  
VDDA  
VDDO_X  
IDD_X  
Test Conditions  
Minimum  
3.135  
Typical  
3.3  
Maximum  
3.465  
VDD  
Units  
V
Analog Supply Voltage  
Power Supply Voltage  
Power Supply Current  
Analog Supply Current  
Power Supply Current; NOTE 1  
VDD – 0.1  
3.135  
3.3  
V
3.3  
3.465  
132  
V
118  
52  
mA  
mA  
mA  
IDDA  
58  
IDDO_X  
103  
115  
NOTE: VDD_X denotes, VDD, VDDD, VDD_XTAL.  
NOTE: VDDO_X denotes, VDDO_A, VDDO_B, VDDO_C, VDDO_C5, VDDO_REFOUT.  
NOTE: IDD_X denotes, IDD, IDDD, IDD_XTAL.  
NOTE: IDDO_X denotes, IDDO_A + IDDO_B + IDDO_C + IDDO_C5 + IDDO_REFOUT.  
NOTE: The device has a power sequence requirement, refer to the Application Section.  
NOTE 1: HCSL outputs are disabled, LVDS outputs are terminated with 100and LVCMOS, outputs enabled but without load.  
Table 4B. LVCMOS/LVTTL DC Characteristics, VDD_X = VDDO_A = VDDO_REFOUT = 3.3V 5%, TA = -40°C to 85°C  
Symbol Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
V
VIH  
VIL  
Input High Voltage  
2
VDD + 0.3  
Input Low Voltage  
-0.3  
0.8  
150  
5
V
FSEL, BYPASS  
OE_[4:1]  
VDD = VIN = 3.465V  
µA  
µA  
µA  
µA  
V
IIH  
Input High Current  
V
DD = VIN = 3.465V  
FSEL, BYPASS  
OE_[4:1]  
V
DD = 3.465V, VIN = 0V  
DD = 3.465V, VIN = 0V  
IOH = -12mA  
-5  
IIL  
Input Low Current  
V
-150  
2.6  
VOH  
VOL  
Output High Voltage  
Output High Voltage  
QA[0:1], REFOUT  
QA[0:1], REFOUT  
IOL = 12mA  
0.5  
V
NOTE: VDD_X denotes, VDD, VDDD, VDD_XTAL.  
REVISION B 05/29/15  
5
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
Table 4C. LVDS Output DC Characteristics, VDDO_B = VDDO_C5 = 3.3V 5%, TA = -40°C to 85°C°  
Symbol Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
454  
Units  
mV  
mV  
V
VOD  
Differential Output Voltage  
247  
VOD  
VOS  
VOD Magnitude Change  
Offset Voltage  
50  
1.25  
1.375  
50  
VOS  
VOS Magnitude Change  
mV  
Table 5. Crystal Characteristics  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
Mode of Oscillation  
Fundamental  
Frequency  
25  
12  
MHz  
pF  
Capacitance Loading (CL)  
Equivalent Series Resistance (ESR)  
Shunt Capacitance  
18  
80  
7
pF  
NOTE: IDT Part #603-25-173 recommended.  
REVISION B 05/29/15  
6
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
AC Electrical Characteristics  
Table 6A. LVCMOS AC Electrical Characteristics, VDD_X = VDDO_A = VDDO_REFOUT = 3.3V 5%, TA = -40°C to 85°C  
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
25  
Maximum  
Units  
MHz  
MHz  
MHz  
REF_OUT  
QA[0:1]  
Output  
Frequency  
fOUT  
FSEL = 1  
FSEL = 0  
66.66  
133.33  
QA[0:1]  
f
OUT = 133.33MHz,  
Integration Range (12kHz to 20MHz)  
0.27  
0.29  
0.40  
0.45  
ps  
ps  
RMS Phase Jitter  
(Random); NOTE 1  
tJIT  
fOUT = 66.66MHz,  
Integration Range (12kHz to 20MHz)  
n(100)  
n(1k)  
100Hz from Carrier  
1kHz from Carrier  
10kHz from Carrier  
100kHz from Carrier  
1MHz from Carrier  
10MHz from Carrier  
fOUT = 133.33MHz  
fOUT = 66.66MHz  
-98  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
ps  
-122  
-134  
-138  
-145  
-153  
Single-side Band Phase  
=
n(10k)  
n(100k)  
n(1M)  
n(10M)  
Noise for fOUT  
133.33MHz  
35  
40  
Cycle-to-Cycle Jitter;  
NOTE 2  
tJIT(cc)  
ps  
Output Skew;  
NOTE 2, 3  
tsk(o)  
QA[0:1]  
30  
ps  
REF_OUT  
QA[0:1]  
47  
40  
53  
60  
%
%
ps  
Output  
Duty Cycle  
odc  
tR / tF  
Output Rise/ Fall Time  
20% to 80%  
275  
800  
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is  
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium  
has been reached under these conditions.  
NOTE: VDD_X denotes, VDD, VDDD, VDD_XTAL.  
NOTE: Characterized using IDT/ Fox Part #603-25-173 crystal.  
NOTE 1: Refer to the phase noise plot.  
NOTE 2: This parameter is defined in accordance with JEDEC Standard 65.  
NOTE 3: Defined as skew between outputs at the same supply voltage and with equal load conditions.  
REVISION B 05/29/15  
7
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
Table 6B. LVDS AC Electrical Characteristics, VDD_X = VDDO_B = VDDO_C5 = 3.3V 5%, TA = -40°C to 85°C  
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
QC5, nQC5  
100  
MHz  
Output  
Frequency  
fOUT  
QB[0:2],  
nQB[0:2]  
125  
0.27  
0.21  
MHz  
ps  
fOUT = 100MHz,  
Integration Range (12kHz to 20MHz)  
0.45  
0.35  
RMS Phase Jitter (Random);  
NOTE 1  
tJIT  
fOUT = 125MHz,  
Integration Range (12kHz to 20MHz)  
ps  
n(100)  
n(1k)  
100Hz from Carrier  
1kHz from Carrier  
10kHz from Carrier  
100kHz from Carrier  
1MHz from Carrier  
10MHz from Carrier  
fOUT = 100MHz  
-93  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
ps  
-122  
-135  
-138  
-146  
-155  
n(10k)  
n(100k)  
n(1M)  
n(10M)  
Single-side Band Phase  
Noise for fOUT = 125MHz  
35  
35  
Cycle-to-Cycle Jitter;  
NOTE 2  
tJIT(cc)  
fOUT = 125MHz  
ps  
OutputSkew; QB[0:2],  
nQB[0:2]  
tsk(o)  
40  
ps  
%
NOTE 2, 3  
QB[0:2],  
nQB[0:2];  
QC5, nQC5  
Output Duty  
Cycle  
odc  
47  
53  
tR / tF  
tDIS  
Output Rise/ Fall Time  
Output Disable Time  
Output Enable Time  
20% to 80%  
100  
450  
ps  
ns  
ns  
50  
tEN  
650  
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is  
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium  
has been reached under these conditions.  
NOTE: VDD_X denotes, VDD, VDDD, VDD_XTAL.  
NOTE: Characterized using IDT/ Fox Part #603-25-173 crystal.  
NOTE 1: Refer to the phase noise plot.  
NOTE 2: This parameter is defined in accordance with JEDEC Standard 65.  
NOTE 3: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at the differential crosspoint.  
REVISION B 05/29/15  
8
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
Table 6C. HCSL AC Electrical Characteristics, V  
= VDDO_C = 3.3V 5%, T = -40°C to 85°C  
A
DD_X  
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
Output  
frequency  
QC[0:4],  
nQC[0:4]  
fOUT  
100  
MHz  
RMS Phase Jitter (Random);  
NOTE 1  
fOUT = 100MHz,  
Integration Range (12kHz to 20MHz)  
tJIT  
0.27  
0.4  
ps  
n(100)  
n(1k)  
100Hz from Carrier  
-101  
-123  
-136  
-140  
-147  
-153  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
1kHz from Carrier  
n(10k)  
n(100k)  
n(1M)  
n(10M)  
10kHz from Carrier  
Single-side Band Phase  
Noise for fOUT = 100MHz  
100kHz from Carrier  
1MHz from Carrier  
10MHz from Carrier  
Cycle-to-Cycle Jitter;  
NOTE 2  
tJIT(CC)  
f
OUT = 100MHz  
50  
70  
ps  
ps  
Output Skew; QC[0:4],  
nQC[0:4]  
tsk(o)  
NOTE 2, 3  
tDIS  
tEN  
Output Disable Time  
Output Enable Time  
30  
55  
ns  
ns  
Absolute Maximum Output  
Voltage; NOTE 4, 5  
VMAX  
1150  
mV  
mV  
mV  
mV  
V/ns  
%
Absolute Minimum Output  
Voltage; NOTE 4, 6  
VMIN  
-150  
200  
Absolute Crossing Voltage;  
NOTE 4, 7, 8  
VCROSS  
VCROSS  
tSLEW  
odc  
550  
140  
4
Total Variation of VCROSS  
over all edges; NOTE 4, 8, 9  
Rise/Fall Edge Rate;  
NOTE 10, 11  
Measured between  
-150mV to +150mV  
0.6  
47  
Output Duty  
Cycle  
QC[0:4].  
nQC[0:4]  
53  
NOTE: VDD_X denotes, VDD, VDDD, VDD_XTAL.  
NOTE: Characterized using IDT/ Fox Part #603-25-173 crystal.  
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is  
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium  
has been reached under these conditions.  
NOTE 1: Refer to the phase noise plot.  
NOTE 2: This parameter is defined in accordance with JEDEC Standard 65.  
NOTE 3: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at the differential crosspoint.  
NOTE 4: Measurement taken from single-ended waveform.  
NOTE 5: Defined as the maximum instantaneous voltage including overshoot.  
NOTE 6: Defined as the minimum instantaneous voltage including undershoot. See Parameter Measurement Information Section.  
NOTE 7: Measured at crosspoint where the instantaneous voltage value of the rising edge of QCx equals the falling edge of nQCx. See  
Parameter Measurement Information Section.  
NOTE 8: Refers to the total variation from the lowest crosspoint to the highest, regardless of which edge is crossing. Refers to all crosspoint  
for this measurement. See Parameter Measurement Information Section.  
NOTE 9: Defined as the total variation of all crossing voltage of rising QCx and falling nQCx. This is the maximum allowed variance in the  
VCROSS for any particular system. See Parameter Measurement Information Section.  
NOTE 10: Measurement taken from a differential waveform.  
NOTE 11: Measured from -150mV to +150mV on the differential waveform (derived from QCx minus nQCx). The signal must be monotonic  
through the measurement region for rise and fall time. The 300mV measurement window is centered on the differential zero crossing.  
See Parameter Measurement Information Section.  
REVISION B 05/29/15  
9
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
Table 6D. PCI Express Jitter Specifications, V  
= VDDO_C = 3.3V 5%, TA = -40°C to 85°C  
DD_X  
PCIe Industry  
Maximum Specification  
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
Units  
Phase Jitter  
Peak-to-Peak;  
NOTE 1, 4  
ƒ= 100MHz, 25MHz Crystal Input  
Evaluation Band: 0Hz - Nyquist  
(clock frequency/2)  
tj  
7.56  
12.0  
86.0  
ps  
(PCIe Gen 1)  
ƒ= 100MHz, 25MHz Crystal Input  
High Band: 1.5MHz - Nyquist  
(clock frequency/2)  
tREFCLK_HF_RMS  
(PCIe Gen 2)  
Phase Jitter RMS;  
NOTE 2, 4  
0.58  
0.05  
0.11  
1.0  
1.0  
3.1  
3.0  
0.8  
ps  
ps  
ps  
tREFCLK_LF_RMS  
(PCIe Gen 2)  
Phase Jitter RMS; ƒ= 100MHz, 25MHz Crystal Input  
Low Band: 10kHz - 1.5MHz  
NOTE 2, 4  
ƒ= 100MHz, 25MHz Crystal Input  
Evaluation Band: 0Hz - Nyquist  
(clock frequency/2)  
tREFCLK_RMS  
(PCIe Gen 3)  
Phase Jitter RMS;  
NOTE 3, 4  
0.25  
NOTE: VDD_X denotes, VDD, VDDD, VDD_XTAL.  
NOTE: Characterized using IDT/ Fox Part #603-25-173 crystal.  
NOTE: Measurements done on QC[0:4]. nQC[0:4] output pairs.  
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is  
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium  
has been reached under these conditions. For additional information, refer to the PCI Express Application Note section in the datasheet.  
NOTE 1: Peak-to-Peak jitter after applying system transfer function for the Common Clock Architecture. Maximum limit for PCI Express Gen 1  
is 86ps peak-to-peak for a sample size of 106 clock periods.  
NOTE 2: RMS jitter after applying the two evaluation bands to the two transfer functions defined in the Common Clock Architecture and  
reporting the worst case results for each evaluation band. Maximum limit for PCI Express Generation 2 is 3.1ps RMS for tREFCLK_HF_RMS  
(High Band) and 3.0ps RMS for tREFCLK_LF_RMS (Low Band).  
NOTE 3: RMS jitter after applying system transfer function for the common clock architecture. This specification is based on the PCI Express  
Base Specification Revision 0.7, October 2009 and is subject to change pending the final release version of the specification.  
NOTE 4: This parameter is guaranteed by characterization. Not tested in production.  
REVISION B 05/29/15  
10  
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
HCSL Typical Phase Noise at 100MHz  
Offset Frequency (HZ)  
REVISION B 05/29/15  
11  
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
LVDS Typical Phase Noise at 125MHz  
Offset Frequency (HZ)  
REVISION B 05/29/15  
12  
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
LVCMOS Typical Phase Noise at 133.33MHz  
Offset Frequency (HZ)  
REVISION B 05/29/15  
13  
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
Parameter Measurement Information  
1.65V 5V  
1.65V 5V  
Ferrite Bead  
Ferrite Bead  
V
DD_X,  
,
V
V
DD_X,  
V
DDO_X  
3.3V 5%  
DDO_X  
V
V
DDA  
DDA  
1.65V 5V  
VDD_X denotes, VDD, VDDD, VDD_XTAL  
VDDO_X denotes, VDDO_B, VDDO_C5  
VDD_X denotes, VDD, VDDD, VDD_XTAL  
VDDO_X denotes, VDDO_A, VDDO_REFOUT  
LVDS Output Load Test Circuit  
LVCMOS Output Load Test Circuit  
3.3V 5%  
3.3V 5%  
3.3V 5%  
3.3V 5%  
Ferrite Bead  
Ferrite Bead  
Measurement  
Point  
V
V
DD_X,  
V
V
DD_X,  
DDO_C  
DDO_C  
V
V
DDA  
DDA  
2pF  
Measurement  
Point  
GND  
2pF  
VDD_X denotes, VDD, VDDD, VDD_XTAL.  
VDD_X denotes, VDD, VDDD, VDD_XTAL.  
This load condition is used for VMAX, VMIN, VCROSS, VCROSS,  
and tSLEW measurements.  
This load condition is used for current, tjit(cc), tjit(Ø), tsk(o) and  
odc measurements.  
HCSL Output Load Test Circuit  
HCSL Output Load Test Circuit  
nQx  
Qx  
VDDO_X  
Qx  
Qy  
2
nQy  
Qy  
VDDO_X  
2
tsk(o)  
LVCMOS Output Skew  
Output Skew (Differential Outputs)  
REVISION B 05/29/15  
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CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
Parameter Measurement Information, continued  
nQx  
Qx  
tcycle n  
tcycle n+1  
tjit(cc) = tcycle n – tcycle n+1  
|
|
1000 Cycles  
RMS Phase Jitter  
Cycle-to-Cycle Jitter (Differential Output)  
nQx  
80%  
80%  
80%  
80%  
VOD  
20%  
20%  
20%  
20%  
QREFOUT  
QA[0:1]  
Qx  
tR  
tF  
tF  
tR  
LVCMOS Output Rise/Fall Time  
LVDS Output Rise/Fall Time  
nQx  
Qx  
HCSL Output Points for Rise/Fall Edge Rate  
Differential Output Duty Cycle  
REVISION B 05/29/15  
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CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
Parameter Measurement Information, continued  
T
STABLE  
V
RB  
+150mV  
VRB = +100mV  
0.0V  
V
RB = -100mV  
-150mV  
Q - nQ  
V
RB  
T
STABLE  
HCSL Output Measurement Points for Ringback  
REVISION B 05/29/15  
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CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
Applications Information  
Recommendations for Unused Input and Output Pins  
Inputs:  
Outputs:  
LVCMOS Control Pins  
LVCMOS Outputs  
All control pins have internal pullup or pulldown resistors; additional  
resistance is not required but can be added for additional protection.  
A 1kresistor can be used.  
All unused LVCMOS outputs can be left floating. There should be no  
trace attached.  
LVDS Outputs  
All unused LVDS outputs can be either left floating or terminated with  
100across. If they are left floating, there should be no trace  
attached.  
HCSL Outputs  
All unused differential outputs can be left floating. We recommend  
that there is no trace attached. Both sides of the differential output  
pair should either be left floating or terminated.  
Power Supply Sequence Requirement  
The 8V49N211 has a power supply sequence requirement.  
This device requires that VDD, VDDA, VDD_XTAL, and VDDD are powered simultaneously.  
This device has been characterized using the recommended power supply filtering techniques in the Schematic Example.  
REVISION B 05/29/15  
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CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
Overdriving the XTAL Interface  
The XTAL_IN input can be overdriven by an LVCMOS driver or by one  
side of a differential driver through an AC coupling capacitor. The  
XTAL_OUT pin can be left floating. The amplitude of the input signal  
should be between 500mV and 1.8V and the slew rate should not be  
less than 0.2V/nS. For 3.3V LVCMOS inputs, the amplitude must be  
reduced from full swing to at least half the swing in order to prevent  
signal interference with the power rail and to reduce internal noise.  
Figure 1A shows an example of the interface diagram for a high  
speed 3.3V LVCMOS driver. This configuration requires that the sum  
of the output impedance of the driver (Ro) and the series resistance  
(Rs) equals the transmission line impedance. In addition, matched  
termination at the crystal input will attenuate the signal in half. This  
can be done in one of two ways. First, R1 and R2 in parallel should  
equal the transmission line impedance. For most 50applications,  
R1 and R2 can be 100. This can also be accomplished by removing  
R1 and changing R2 to 50. The values of the resistors can be  
increased to reduce the loading for a slower and weaker LVCMOS  
driver. Figure 1B shows an example of the interface diagram for an  
LVPECL driver. This is a standard LVPECL termination with one side  
of the driver feeding the XTAL_IN input. It is recommended that all  
components in the schematics be placed in the layout. Though some  
components might not be used, they can be utilized for debugging  
purposes. The datasheet specifications are characterized and  
guaranteed by using a quartz crystal as the input.  
VCC  
XTAL_OUT  
R1  
100  
C1  
Rs  
Zo = 50 ohms  
Ro  
XTAL_IN  
.1uf  
R2  
100  
Zo = Ro + Rs  
LVCMOS Driver  
Figure 1A. General Diagram for LVCMOS Driver to XTAL Input Interface  
XTAL_OUT  
C2  
Zo = 50 ohms  
XTAL_I N  
.1uf  
Zo = 50 ohms  
R1  
50  
R2  
50  
LVPECL Driver  
R3  
50  
Figure 1B. General Diagram for LVPECL Driver to XTAL Input Interface  
REVISION B 05/29/15  
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CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
LVDS Driver Termination  
For a general LVDS interface, the recommended value for the  
termination impedance (ZT) is between 90and 132. The actual  
value should be selected to match the differential impedance (Z0) of  
your transmission line. A typical point-to-point LVDS design uses a  
100parallel resistor at the receiver and a 100differential  
transmission-line environment. In order to avoid any  
standard termination schematic as shown in Figure 2A can be used  
with either type of output structure. Figure 2B, which can also be  
used with both output types, is an optional termination with center tap  
capacitance to help filter common mode noise. The capacitor value  
should be approximately 50pF. If using a non-standard termination, it  
is recommended to contact IDT and confirm if the output structure is  
current source or voltage source type. In addition, since these  
outputs are LVDS compatible, the input receiver’s amplitude and  
common-mode input range should be verified for compatibility with  
the output.  
transmission-line reflection issues, the components should be  
surface mounted and must be placed as close to the receiver as  
possible. IDT offers a full line of LVDS compliant devices with two  
types of output structures: current source and voltage source. The  
ZO ZT  
LVDS  
Receiver  
LVDS  
Driver  
ZT  
Figure 2A. Standard Termination  
ZT  
ZO ZT  
LVDS  
Receiver  
LVDS  
Driver  
2
ZT  
2
C
Figure 2B. Optional Termination  
LVDS Termination  
REVISION B 05/29/15  
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CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
Recommended Termination  
Figure 3A is the recommended source termination for applications  
where the driver and receiver will be on a separate PCBs. This  
termination is the standard for PCI Express™and HCSL output types.  
All traces should be 50impedance single-ended or 100Ω  
differential.  
Rs  
0.5" Max  
L1  
0-0.2"  
L2  
1-14"  
L4  
0.5 - 3.5"  
L5  
22 to 33 +/-5%  
L1  
L2  
L4  
L5  
PCI Express  
Connector  
PCI Express  
Driver  
PCI Express  
Add-in Card  
0-0.2" L3  
L3  
49.9 +/- 5%  
Rt  
Figure 3A. Recommended Source Termination (where the driver and receiver will be on separate PCBs)  
Figure 3B is the recommended termination for applications where a  
point-to-point connection can be used. A point-to-point connection  
contains both the driver and the receiver on the same PCB. With a  
matched termination at the receiver, transmission-line reflections will  
be minimized. In addition, a series resistor (Rs) at the driver offers  
flexibility and can help dampen unwanted reflections. The optional  
resistor can range from 0to 33. All traces should be 50Ω  
impedance single-ended or 100differential.  
Rs  
0.5" Max  
L1  
0-18"  
L2  
0-0.2"  
L3  
0 to 33  
0 to 33  
L1  
L2  
L3  
PCI Express  
Driver  
49.9 +/- 5%  
Rt  
Figure 3B. Recommended Termination (where a point-to-point connection can be used)  
REVISION B 05/29/15  
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CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
VFQFN EPAD Thermal Release Path  
In order to maximize both the removal of heat from the package and  
the electrical performance, a land pattern must be incorporated on  
the Printed Circuit Board (PCB) within the footprint of the package  
corresponding to the exposed metal pad or exposed heat slug on the  
package, as shown in Figure 4. The solderable area on the PCB, as  
defined by the solder mask, should be at least the same size/shape  
as the exposed pad/slug area on the package to maximize the  
thermal/electrical performance. Sufficient clearance should be  
designed on the PCB between the outer edges of the land pattern  
and the inner edges of pad pattern for the leads to avoid any shorts.  
and dependent upon the package power dissipation as well as  
electrical conductivity requirements. Thus, thermal and electrical  
analysis and/or testing are recommended to determine the minimum  
number needed. Maximum thermal and electrical performance is  
achieved when an array of vias is incorporated in the land pattern. It  
is recommended to use as many vias connected to ground as  
possible. It is also recommended that the via diameter should be 12  
to 13mils (0.30 to 0.33mm) with 1oz copper via barrel plating. This is  
desirable to avoid any solder wicking inside the via during the  
soldering process which may result in voids in solder between the  
exposed pad/slug and the thermal land. Precautions should be taken  
to eliminate any solder voids between the exposed heat slug and the  
land pattern. Note: These recommendations are to be used as a  
guideline only. For further information, please refer to the Application  
Note on the Surface Mount Assembly of Amkor’s  
While the land pattern on the PCB provides a means of heat transfer  
and electrical grounding from the package to the board through a  
solder joint, thermal vias are necessary to effectively conduct from  
the surface of the PCB to the ground plane(s). The land pattern must  
be connected to ground through these vias. The vias act as “heat  
pipes”. The number of vias (i.e. “heat pipes”) are application specific  
Thermally/Electrically Enhance Leadframe Base Package, Amkor  
Technology.  
SOLDER  
SOLDER  
PIN  
EXPOSED HEAT SLUG  
PIN  
PIN PAD  
GROUND PLANE  
LAND PATTERN  
(GROUND PAD)  
PIN PAD  
THERMAL VIA  
Figure 4. P.C. Assembly for Exposed Pad Thermal Release Path – Side View (drawing not to scale)  
REVISION B 05/29/15  
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CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
PCI Express Application Note  
PCI Express jitter analysis methodology models the system  
response to reference clock jitter. The block diagram below shows the  
most frequently used Common Clock Architecture in which a copy of  
the reference clock is provided to both ends of the PCI Express Link.  
In the jitter analysis, the transmit (Tx) and receive (Rx) serdes PLLs  
are modeled as well as the phase interpolator in the receiver. These  
transfer functions are called H1, H2, and H3 respectively. The overall  
system transfer function at the receiver is:  
Hts= H3s  H1sH2s  
The jitter spectrum seen by the receiver is the result of applying this  
system transfer function to the clock spectrum X(s) and is:  
Ys= Xs  H3s  H1sH2s  
In order to generate time domain jitter numbers, an inverse Fourier  
Transform is performed on X(s)*H3(s) * [H1(s) - H2(s)].  
PCIe Gen 2A Magnitude of Transfer Function  
PCI Express Common Clock Architecture  
For PCI Express Gen 1, one transfer function is defined and the  
evaluation is performed over the entire spectrum: DC to Nyquist (e.g  
for a 100MHz reference clock: 0Hz – 50MHz) and the jitter result is  
reported in peak-peak.  
PCIe Gen 2B Magnitude of Transfer Function  
For PCI Express Gen 3, one transfer function is defined and the  
evaluation is performed over the entire spectrum. The transfer  
function parameters are different from Gen 1 and the jitter result is  
reported in RMS.  
PCIe Gen 1 Magnitude of Transfer Function  
For PCI Express Gen 2, two transfer functions are defined with 2  
evaluation ranges and the final jitter number is reported in RMS. The  
two evaluation ranges for PCI Express Gen 2 are 10kHz – 1.5MHz  
(Low Band) and 1.5MHz – Nyquist (High Band). The plots show the  
individual transfer functions as well as the overall transfer function Ht.  
PCIe Gen 3 Magnitude of Transfer Function  
For a more thorough overview of PCI Express jitter analysis  
methodology, please refer to IDT Application Note PCI Express  
Reference Clock Requirements.  
REVISION B 05/29/15  
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CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
Schematic Layout  
Figure 5 shows an example 8V49N211 application schematic. The  
schematic example focuses on functional connections and is not  
configuration specific. Refer to the pin description and functional  
tables in the datasheet to ensure the logic control inputs are properly  
set. Input and output terminations shown are intended as examples  
only and may not represent the exact user configuration.  
reached. The ground connection of the tuning capacitors should first  
be made between the capacitors on the top layer, then a single  
ground via is dropped to connect the tuning cap ground to the ground  
plane as close to the 8V49N211 as possible as shown in the  
schematic.  
The schematic example shows two different HCSL output  
terminations; the standard termination for the case in which the  
HCSL receiver is on the same PCB as the 8V49N211 as well as the  
termination for an attached PCIe add-in card.  
In this example a 12pF parallel resonant 25MHz crystal (IDT/ FOX  
Part #603-25-173) is used with the recommended load caps C1 = C2  
= 2pF. Use a single point ground connection for the two load caps as  
shown in the schematic. The load caps are recommended for  
frequency accuracy, but these may be adjusted for different board  
layouts. Crystals with different load capacities may be used, but the  
load capacitors will have to be changed accordingly. If different  
crystal types are used, please consult IDT for recommendations.  
As with any high speed analog circuitry, the power supply pins are  
vulnerable to random noise. To achieve optimum jitter performance,  
power supply isolation is required. The 8V49N211 provides separate  
VDD, VDDD, VDDA, VDD_XTAL and VDDO_REF, VDDO_A, VDDO_B,  
VDDO_C, and VDDO_C5 pins to isolate any high speed switching noise  
at the outputs from coupling into the internal PLL.  
Crystal layout is very important to minimize capacitive coupling  
between the crystal pads and leads and other metal in the circuit  
board. Capacitive coupling to other conductors has two adverse  
effects; it reduces the oscillator frequency leaving less tuning margin  
and noise coupling from power planes and logic transitions on signal  
traces can pull the phase of the crystal resonance, inducing jitter.  
Routing I2C under the crystal is a very common layout error, based  
on the assumption that it is a low frequency signal and will not affect  
the crystal oscillation. In fact, I2C transition times are short enough to  
capacitively couple into the crystal if they are routed close enough to  
the crystal traces.  
In order to achieve the best possible filtering, it is highly  
recommended that the 0.1µF capacitors be placed on the 8V49N211  
side of the PCB as close to the power pins as possible. This is  
represented by the placement of these capacitors in the schematic.  
If space is limited, the ferrite beads, 10µF capacitors and the 0.1µF  
capacitors connected directly to 3.3V can be placed on the opposite  
side of the PCB. If space permits, place all filter components on the  
device side of the board.  
Power supply filter recommendations are a general guideline to be  
used for reducing external noise from coupling into the devices. The  
filter performance is designed for a wide range of noise frequencies.  
This low-pass filter starts to attenuate noise at approximately 10kHz.  
If a specific frequency noise component is known, such as switching  
power supplies frequencies, it is recommended that component  
values be adjusted and if required, additional filtering be added.  
Additionally, good general design practices for power plane voltage  
stability suggests adding bulk capacitance in the local area of all  
devices.  
In layout, all capacitive coupling to the crystal from any signal trace is  
to be minimized, that is to the XTAL_IN and XTAL_OUT pins, traces  
to the crystal pads, the crystal pads and the tuning capacitors. Using  
a crystal on the top layer as an example, void all signal and power  
layers under the crystal connections between the top layer and the  
ground plane used by the 8V49N211. Then calculate the parasitic  
capacity to the ground and determine if it is large enough to preclude  
tuning the oscillator. If the coupling is excessive, particularly if the first  
layer under the crystal is a ground plane, a layout option is to void the  
ground plane and all deeper layers until the next ground plane is  
REVISION B 05/29/15  
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CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
Place each 0.1uF bypass cap directly adjacent to the respective VDD, VDD_XTAL, VDDA or VDDO_x pin.  
3.3V  
FB1  
3.3V  
1
2
FB3  
2
1
BLM18BB221SN 1  
U1  
C7  
0.1uF  
C8  
10 uF  
BLM18BB221SN1  
42  
36  
15  
20  
28  
29  
VD DO_B  
VD DO_B  
VDD O_C  
VDD O_C  
VDD O_C  
VD DO_C5  
C21  
C20  
0. 1u F  
C17  
0. 1u F  
10uF  
VDD  
50  
12  
C16  
0. 1u F  
VDD  
C10  
0. 1u F  
C25  
0.1uF  
VDD D  
C24  
0. 1 uF  
C11  
0.1uF  
C23  
0. 1u F  
C22  
0.1uF  
FB2  
BLM18BB221SN 1  
R17  
C28  
0. 1u F  
R1  
Zo = 50  
10  
46  
45  
REFOUT  
REFOUT  
QA0  
VDD A  
2
VDD A  
20  
2
C9  
10uF  
C12  
0.1uF  
R21  
R16  
QA0  
QA1  
LVCMOS Receiver  
LVCMOS Termination  
7
VDD_XTAL  
VDD _XTAL  
33  
10  
C6  
C13  
0.1uF  
R20  
Zo = 50  
10uF  
QA1  
3.3V  
33  
FB4  
1
2
LVCMOS Receiver  
BLM18BB221SN1  
Zo = 50 Ohm  
Zo = 50 Ohm  
C14  
0.1uF  
C15  
10 uF  
+
41  
40  
QB0  
QB0  
R2  
100  
9
nQB0  
VDD O_RE FOU T  
VDD O_A  
nQ B0  
-
47  
C19  
0. 1uF  
LVDS Rec eiv er  
38  
37  
C18  
0. 1u F  
QB1  
QB1  
nQB1  
LVDS Termination  
nQ B1  
R19  
0
IDT/ FOX  
XTAL_IN  
Part #603-25-173  
Zo = 50 Ohm  
crystal  
5
6
35  
34  
QB2  
XT A L_ IN  
QB2  
+
-
4
2
X1  
nQB2  
R3  
100  
nQ B2  
1
3
XT A L_ OU T  
XT A L_ OU T  
Zo = 50 Ohm  
25MHz(12pF)  
LVDS Receiver  
C26  
2pF  
C27  
2p F  
R18  
14  
0" to 18"  
IR EF  
R8  
R7  
33  
Zo = 50  
47 5  
16  
17  
QC0  
nQC0  
QC0  
nQC0  
+
-
52  
53  
54  
55  
OE_ 1  
OE_ 2  
OE_ 3  
OE_ 4  
OE_ 1  
OE_ 2  
OE_ 3  
OE_ 4  
33  
Zo = 50  
18  
19  
QC1  
nQC1  
Optional  
QC1  
nQC1  
49  
48  
BYPASS  
FSEL  
HCSL Receiver  
BYPASS  
FSEL  
R13  
50  
R10  
50  
13  
1
4
3
8
43  
51  
56  
11  
23  
32  
33  
39  
44  
PCI Express  
P oi nt- to-P oi nt  
Connection  
GN DD  
GN DA  
GN D_ XT AL  
GN D  
GN D  
GN D  
GN D  
GN D  
GN D_REF OU T  
VSSO_C  
VSSO_C5  
VSSO_B  
VSSO_B  
VSSO_A  
21  
22  
QC2  
nQC2  
QC2  
nQC2  
HCSL Termination  
24  
25  
QC3  
nQC3  
QC3  
nQC3  
0.5" to 3.5"  
Zo = 50  
1" to 14"  
Zo = 50  
R11 33  
+
26  
27  
QC4  
nQC4  
QC4  
nQC4  
R14 33  
Zo = 50  
Zo = 50  
-
31  
30  
QC5  
nQC5  
R12  
50  
R9  
50  
HCSL Receiver  
QC5  
nQC5  
57  
e_PAD  
PCI Express Add-In Card  
Logic Control Input Ex ampl es  
Set Logic  
Input to '1'  
Set Logic  
Input to '0'  
VDD  
VDD  
Zo = 50 Ohm  
Zo = 50 Ohm  
RU1  
1k  
RU 2  
No t In st a ll  
+
R15  
100  
To Logic  
Input  
pins  
To Logic  
Input  
pins  
-
LVDS Receiver  
RD1  
Not I nstall  
RD 2  
1k  
Figure 5. 8V49N211 Schematic Example  
REVISION B 05/29/15  
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CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
Power Considerations  
This section provides information on power dissipation and junction temperature for the 8V49N211.  
Equations and example calculations are also provided.  
1. Power Dissipation.  
The total power dissipation for the 8V49N211 is the sum of the core power plus the power dissipation due to the loading.  
The following is the power dissipation for VDD_MAX = 3.3V + 5% = 3.465V, which gives worst case results at 85°C.  
NOTE: Please refer to Section 3 for details on calculating power dissipated in the outputs.  
Power (core)MAX = VDD_MAX * (IDD_X_MAX + IDDA_MAX) = 3.465V * (132mA + 58mA) = 658.35mW  
HCSL Output Power (output)MAX = 44.5mW/Loaded Output pair  
If all outputs are loaded, the total power is 5 * 44.5mW = 222.5mW  
LVDS and LVCMOS Outputs Power (output)MAX = 3.465V * 115mA = 398.475mW  
Total Power_MAX = 658.35mW + 222.5mW + 398.475mW = 1279.325mW  
2. Junction Temperature.  
Junction temperature, Tj, the temperature at the junction of the bond wire and bond pad, directly affects the reliability of the device. The  
maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond  
wire and bond pad temperature remains below 125°C.  
The equation for Tj is as follows: Tj = JA * Pd_total + TA  
Tj = Junction Temperature  
JA = Junction-to-Ambient Thermal Resistance  
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)  
TA = Ambient Temperature  
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance JA must be used. Assuming no air flow and  
a multi-layer board, the appropriate value is 30.5°C/W per Table 7 below.  
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:  
85°C + 1.279W * 30.5°C/W = 124°C. This is below the limit of 125°C.  
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of  
board (multi-layer).  
Table 7. Thermal Resistance qJA for 56 Lead VFQFN, Forced Convection  
JA vs. Air Flow  
Meters per Second  
0
1
2
Multi-Layer PCB, JEDEC Standard Test Boards  
30.5°C/W  
26.4°C/W  
24.7°C/W  
REVISION B 05/29/15  
25  
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
3. Calculations and Equations.  
The purpose of this section is to calculate power dissipation on the IC per HCSL output pairs.  
HCSL output driver circuit and termination are shown in Figure 6.  
VDD  
IOUT = 17mA  
VOUT  
RREF  
4751%  
=
RL  
50  
IC  
Figure 6. HCSL Driver Circuit and Termination  
HCSL is a current steering output which sources a maximum of 17mA of current per output. To calculate worst case on-chip power dissipation,  
use the following equations which assume a 50load to ground.  
The highest power dissipation occurs at VDD  
_
.
MAX  
Power= (VDD_MAX – VOUT) * IOUT  
since VOUT = IOUT * RL  
Power= (VDD_MAX – IOUT * RL) * IOUT  
= (3.465V – 17mA * 50) * 17mA  
Total Power Dissipation per output pair = 44.5mW  
REVISION B 05/29/15  
26  
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
Reliability Information  
Table 8. vs. Air Flow Table for a 56 Lead VFQFN  
JA  
JA vs. Air Flow  
Meters per Second  
0
1
2
Multi-Layer PCB, JEDEC Standard Test Boards  
30.5 °C/W  
26.4°C/W  
24.7°C/W  
Transistor Count  
The transistor count for 8V49N211 is: 174,888  
REVISION B 05/29/15  
27  
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
56 Lead VFQFN Package Outline and Package Dimensions  
REVISION B 05/29/15  
28  
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
56 Lead VFQFN Package Outline and Package Dimensions, continued  
REVISION B 05/29/15  
29  
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
56 Lead VFQFN Package Outline and Package Dimensions, continued  
REVISION B 05/29/15  
30  
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
Ordering Information  
Table 9. Ordering Information Table  
Part/Order Number  
8V49N211NLGI  
Marking  
Package  
Shipping Packaging  
Tray  
Temperature  
-40C to 85C  
-40C to 85C  
IDT8V49N211NLGI  
IDT8V49N211NLGI  
Lead-Free, 56-lead VFQFN  
Lead-Free, 56-lead VFQFN  
8V49N211NLGI8  
Tape & Reel  
REVISION B 05/29/15  
31  
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
8V49N211 DATA SHEET  
Revision History Sheet  
Rev  
Table  
Page  
Description of Change  
Date  
1
6
Features Section - updated Crystal bullet.  
T5  
Crystal Characteristics Table - added note.  
T6A  
T6B  
T6C  
T6D  
7
LVCMOS AC Electrical Characteristics Table - updated Crystal note.  
LVDS AC Electrical Characteristics Table - updated Crystal note.  
HCSL AC Electrical Characteristics Table - updated Crystal note.  
PCI Express Jitter Specifications Table - updated Crystal note.  
Schematic Layout - Updated first sentence in second paragraph.  
Schematic Example - updated Crystal information.  
8
B
5/29/15  
9
10  
23  
24  
CLOCK GENERATOR FOR BROADCOM PROCESSOR  
32  
REVISION B 05/29/15  
Corporate Headquarters  
6024 Silver Creek Valley Road  
San Jose, CA 95138 USA  
Sales  
Tech Support  
email: clocks@idt.com  
1-800-345-7015 or 408-284-8200  
Fax: 408-284-2775  
www.IDT.com  
DISCLAIMER Integrated Device Technology, Inc. (IDT) and its subsidiaries reserve the right to modify the products and/or specifications described herein at any time and at IDT’s sole discretion. All information in  
this document, including descriptions of product features and performance, is subject to change without notice. Performance specifications and the operating parameters of the described products are determined  
in the independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether  
express or implied, including, but not limited to, the suitability of IDT’s products for any particular purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This  
document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties.  
IDT’s products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably  
expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT.  
Integrated Device Technology, IDT and the IDT logo are registered trademarks of IDT. Product specification subject to change without notice. Other trademarks and service marks used herein, including protected  
names, logos and designs, are the property of IDT or their respective third party owners.  
Copyright ©2015 Integrated Device Technology, Inc. All rights reserved.  
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