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CZT5401EBK

型号:

CZT5401EBK

品牌:

CENTRAL[ CENTRAL SEMICONDUCTOR CORP ]

页数:

2 页

PDF大小:

534 K

CZT5401E  
www.centralsemi.com  
ENHANCED SPECIFICATION  
SURFACE MOUNT  
PNP SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CZT5401E is a  
PNP Silicon Transistor, packaged in an SOT-223 case,  
designed for general purpose amplifier applications  
requiring high breakdown voltage.  
MARKING: FULL PART NUMBER  
FEATURES:  
High Collector Breakdown Voltage 250V  
Low Leakage Current 50nA MAX  
Low Saturation Voltage 150mV MAX @ 50mA  
Complementary Device: CZT5551E  
SOT-223 Surface Mount Package  
SOT-223 CASE  
APPLICATIONS:  
General purpose switching and amplification  
Telephone applications  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
250  
220  
CBO  
Collector-Emitter Voltage  
V
V
CEO  
EBO  
Emitter-Base Voltage  
V
7.0  
V
Continuous Collector Current  
Power Dissipation  
I
600  
mA  
W
C
P
2.0  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T
T
-65 to +150  
62.5  
°C  
J, stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
50  
UNITS  
nA  
μA  
nA  
V
I
I
I
V
V
V
=120V  
CBO  
CBO  
EBO  
CB  
CB  
EB  
=120V, T =100°C  
A
=3.0V  
50  
50  
BV  
I =100µA  
250  
220  
7.0  
CBO  
C
BV  
I =1.0mA  
V
CEO  
C
BV  
I =10µA  
V
EBO  
E
V
V
V
V
I =10mA, I =1.0mA  
100  
150  
mV  
mV  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
C
B
I =50mA, I =5.0mA  
C
B
I =10mA, I =1.0mA  
1.00  
1.00  
C
B
I =50mA, I =5.0mA  
V
C
B
Enhanced specification  
R1 (1-March 2010)  
CZT5401E  
ENHANCED SPECIFICATION  
SURFACE MOUNT  
PNP SILICON TRANSISTOR  
ELECTRICAL CHARACTERISTICS - Continued: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
100  
100  
75  
MAX  
300  
UNITS  
h
V
V
V
V
V
V
V
V
=5.0V, I =1.0mA  
C
FE  
CE  
CE  
CE  
CE  
CE  
CB  
CE  
CE  
h  
h  
h  
=5.0V, I =10mA  
FE  
FE  
FE  
C
=5.0V, I =50mA  
C
=10V, I =150mA  
25  
C
f
=10V, I =10mA, f=100MHz  
100  
300  
6.0  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
ob  
E
h
=10V, I =1.0mA, f=1.0kHz  
40  
200  
fe  
C
NF  
=5.0V, I =200μA, R =10Ω,  
C S  
f=10Hz to 15.7kHz  
8.0  
dB  
Enhanced specification  
SOT-223 CASE - MECHANICAL OUTLINE  
LEAD CODE:  
1) Base  
2) Collector  
3) Emitter  
4) Collector  
MARKING:  
FULL PART NUMBER  
R1 (1-March 2010)  
www.centralsemi.com  
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