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SZMMBZH20VAWT1G

型号:

SZMMBZH20VAWT1G

品牌:

ONSEMI[ ONSEMI ]

页数:

5 页

PDF大小:

109 K

MMBZHxxVAWT1G Series,  
SZMMBZHxxVAWT1G Series  
Diodes, Dual 40 Watt Peak  
Power, High Temperature  
SC70 Dual Common Anode Zeners  
www.onsemi.com  
These dual monolithic silicon Zener diodes are designed for  
applications requiring transient overvoltage protection capability. They  
are intended for use in voltage and ESD sensitive equipment such as  
computers, printers, business machines, communication systems,  
medical equipment and other applications. Their dual junction common  
anode design protects two separate lines using only one package. These  
devices are high temperature rated and ideal for use in high reliability  
applications where board space is at a premium.  
SC70  
CASE 419  
STYLE 4  
Features  
CATHODE 1  
CATHODE 2  
3 ANODE  
SC70 Package Allows Either Two Separate Unidirectional  
Configurations or a Single Bidirectional Configuration  
Standard Zener Breakdown Voltage Range: 15 33 V  
Peak Power 40 W @ 1.0 ms (Unidirectional),  
MARKING DIAGRAM  
per Figure 5 Waveform  
ESD Rating:  
Class 3B (> 16 kV) per the Human Body Model  
Class C (> 400 V) per the Machine Model  
XX MG  
G
Low Leakage < 5.0 mA  
1
Flammability Rating UL 94 V0  
XX = Specific Device Code  
175°C T  
Rated for High Temperature, Mission Critical  
J(MAX)  
Applications  
M
G
= Date Code  
= PbFree Package  
(Note: Microdot may be in either location)  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements  
These are PbFree Devices*  
ORDERING INFORMATION  
Mechanical Characteristics:  
Device  
Package  
Shipping  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
Package designed for optimal automated board assembly  
Small package size for high density applications  
Available in 8 mm Tape and Reel  
MMBZHxxVAWT1G  
SC70  
(PbFree)  
3,000 /  
Tape & Reel  
SZMMBZHxxVAWT1G  
SC70  
(PbFree)  
3,000 /  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Use the Device Number to order the 7 inch/3,000 unit reel.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the table on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
December, 2018 Rev. 0  
MMBZH27VAW/D  
MMBZHxxVAWT1G Series, SZMMBZHxxVAWT1G Series  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Power Dissipation @ 1.0 ms (Note 1)  
P
pk  
W
@ T 25°C  
40  
L
Total Power Dissipation on FR5 Board (Note 2)  
°P °  
D
°
@ T = 25°C  
200  
1.6  
mW  
A
Derate above 25°C  
mW/°C  
Thermal Resistance JunctiontoAmbient  
Junction and Storage Temperature Range  
R
315  
°C/W  
°C  
q
JA  
T , T  
J
55 to +175  
stg  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Nonrepetitive current pulse per Figure 5 and derate above T = 25°C per Figure 6.  
A
2. FR5 = 1.0 x 0.75 x 0.62 in.  
ELECTRICAL CHARACTERISTICS  
(T = 25°C unless otherwise noted)  
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)  
Symbol  
Parameter  
I
I
PP  
Maximum Reverse Peak Pulse Current  
I
F
V
C
Clamping Voltage @ I  
PP  
V
RWM  
Working Peak Reverse Voltage  
I
R
Maximum Reverse Leakage Current @ V  
RWM  
V
BR  
Breakdown Voltage @ I  
T
V
C
V
V
BR RWM  
V
I
Test Current  
I
V
F
T
R
T
I
QV  
Maximum Temperature Coefficient of V  
Forward Current  
BR  
BR  
I
F
V
Forward Voltage @ I  
F
F
I
PP  
Z
ZT  
Maximum Zener Impedance @ I  
Reverse Current  
ZT  
I
ZK  
UniDirectional Zener  
Z
ZK  
Maximum Zener Impedance @ I  
ZK  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)  
(V = 0.9 V Max @ I = 10 mA)  
F
F
Breakdown Voltage  
V
@ I (Note 4)  
C
PP  
I
V
@
RWM  
nA  
R
V
(Note 3) (V)  
@ I  
V
I
PP  
V
RWM  
QV  
BR  
T
C
BR  
Device  
mV/5C  
Volts  
12  
Min  
Nom  
15  
Max  
mA  
1.0  
1.0  
1.0  
1.0  
V
A
Marking  
Device*  
MMBZH15VAWT1G  
MMBZH20VAWT1G*  
MMBZH27VAWT1G*  
MMBZH33VAWT1G*  
AJ  
50  
50  
50  
50  
14.25  
19.00  
25.65  
31.35  
15.75  
21.00  
28.35  
34.65  
21  
28  
40  
46  
1.9  
1.4  
12.3  
17.2  
24.3  
30.4  
17  
20  
22  
27  
1.0  
26  
33  
0.87  
3. V measured at pulse test current I at an ambient temperature of 25°C.  
BR  
T
4. Surge current waveform per Figure 5 and derate per Figure 6  
*AECQ release available upon request.  
www.onsemi.com  
2
 
MMBZHxxVAWT1G Series, SZMMBZHxxVAWT1G Series  
TYPICAL CHARACTERISTICS  
18  
15  
12  
9
1000  
100  
10  
1
6
3
0
0.1  
0.01  
40  
0
+50  
+100  
+150  
40  
+25  
+85  
+125  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 1. Typical Breakdown Voltage  
versus Temperature  
Figure 2. Typical Leakage Current  
versus Temperature  
(Upper curve for each voltage is bidirectional mode,  
lower curve is unidirectional mode)  
320  
300  
280  
240  
200  
160  
120  
80  
250  
200  
ALUMINA SUBSTRATE  
5.6 V  
150  
100  
50  
15 V  
FR5 BOARD  
40  
0
0
0
1
2
3
0
25  
50  
75  
100  
125  
150  
175  
BIAS (V)  
TEMPERATURE (°C)  
Figure 3. Typical Capacitance versus Bias Voltage  
(Upper curve for each voltage is unidirectional mode,  
lower curve is bidirectional mode)  
Figure 4. Steady State Power Derating Curve  
www.onsemi.com  
3
MMBZHxxVAWT1G Series, SZMMBZHxxVAWT1G Series  
TYPICAL CHARACTERISTICS  
100  
PULSE WIDTH (t ) IS DEFINED  
P
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
AS THAT POINT WHERE THE  
PEAK CURRENT DECAYS TO  
t 10 ms  
r
50% OF I .  
PP  
100  
PEAK VALUE I  
PP  
I
PP  
HALF VALUE −  
2
50  
0
t
P
0
1
2
3
4
0
25  
50  
75  
100  
125  
150 175 200  
t, TIME (ms)  
T , AMBIENT TEMPERATURE (°C)  
A
Figure 5. Pulse Waveform  
Figure 6. Pulse Derating Curve  
100  
100  
10  
1
RECTANGULAR  
WAVEFORM, T = 25°C  
RECTANGULAR  
WAVEFORM, T = 25°C  
A
A
BIDIRECTIONAL  
BIDIRECTIONAL  
10  
UNIDIRECTIONAL  
UNIDIRECTIONAL  
1
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
1000  
PW, PULSE WIDTH (ms)  
PW, PULSE WIDTH (ms)  
Figure 7. Maximum Nonrepetitive Surge  
Figure 8. Maximum Nonrepetitive Surge  
Power, Ppk versus PW  
Power, Ppk(NOM) versus PW  
Power is defined as V  
x I (pk) where V  
is  
Power is defined as V (NOM) x I (pk) where  
Z Z  
RSM  
Z
RSM  
the clamping voltage at I (pk).  
V (NOM) is the nominal Zener voltage measured at  
Z
Z
the low test current used for voltage classification.  
www.onsemi.com  
4
MMBZHxxVAWT1G Series, SZMMBZHxxVAWT1G Series  
PACKAGE DIMENSIONS  
SC70 (SOT323)  
CASE 41904  
ISSUE N  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
D
e1  
MILLIMETERS  
INCHES  
DIM  
A
A1  
A2  
b
c
D
E
e
e1  
L
MIN  
0.80  
0.00  
NOM  
0.90  
0.05  
0.70 REF  
0.35  
0.18  
2.10  
1.24  
1.30  
0.65 BSC  
0.38  
MAX  
1.00  
0.10  
MIN  
0.032  
0.000  
NOM  
0.035  
0.002  
0.028 REF  
0.014  
0.007  
0.083  
0.049  
0.051  
0.026 BSC  
0.015  
MAX  
0.040  
0.004  
3
E
H
E
1
2
0.30  
0.10  
1.80  
1.15  
1.20  
0.40  
0.25  
2.20  
1.35  
1.40  
0.012  
0.004  
0.071  
0.045  
0.047  
0.016  
0.010  
0.087  
0.053  
0.055  
b
e
0.20  
2.00  
0.56  
2.40  
0.008  
0.079  
0.022  
0.095  
H
2.10  
0.083  
E
c
STYLE 4:  
A
A2  
PIN 1. CATHODE  
2. CATHODE  
3. ANODE  
0.05 (0.002)  
L
A1  
SOLDERING FOOTPRINT*  
0.65  
0.025  
0.65  
0.025  
1.9  
0.075  
0.9  
0.035  
0.7  
0.028  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
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For additional information, please contact your local  
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MMBZH27VAW/D  
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