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SZMM3Z11VST1G

型号:

SZMM3Z11VST1G

品牌:

ONSEMI[ ONSEMI ]

页数:

5 页

PDF大小:

57 K

MM3ZxxxST1G Series,  
SZMM3ZxxxST1G Series  
Zener Voltage Regulators  
300 mW SOD−323 Surface Mount  
Tight Tolerance Portfolio  
http://onsemi.com  
This series of Zener diodes is packaged in a SOD−323 surface  
mount package that has a power dissipation of 300 mW. They are  
designed to provide voltage regulation protection and are especially  
attractive in situations where space is at a premium. They are well  
suited for applications such as cellular phones, hand−held portables,  
and high density PC boards.  
SOD−323  
CASE 477  
STYLE 1  
Specification Features  
Standard Zener Breakdown Voltage Range − 3.3 V to 36 V  
Steady State Power Rating of 300 mW  
1
2
Small Body Outline Dimensions:  
− 0.067x 0.049(1.7 mm x 1.25 mm)  
Low Body Height: 0.035(0.9 mm)  
Cathode  
Anode  
MARKING DIAGRAM  
Package Weight: 4.507 mg/unit  
ESD Rating of Class 3 (> 16 kV) per Human Body Model  
Tight Tolerance V  
Z
XXMG  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
G
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
XX= Specific Device Code  
M = Date Code*  
Compliant*  
G
= Pb−Free Package  
Mechanical Characteristics:  
CASE: Void-free, transfer-molded plastic  
FINISH: All external surfaces are corrosion resistant  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
(Note: Microdot may be in either location)  
*Date Code orientation may vary  
depending upon manufacturing location.  
LEADS: Plated with Pb−Sn or Sn only (Pb−Free)  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
MOUNTING POSITION: Any  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MM3ZxxxST1G  
SOD−323  
(Pb−Free)  
3,000 /  
Tape & Reel  
SZMM3ZxxxST1G SOD−323  
(Pb−Free)  
3,000 /  
Tape & Reel  
MM3ZxxxST3G  
SOD−323  
(Pb−Free)  
10,000 /  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
DEVICE MARKING INFORMATION  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 3 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
December, 2014 − Rev. 23  
MM3Z2V4ST1/D  
MM3ZxxxST1G Series, SZMM3ZxxxST1G Series  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
Total Device Dissipation FR−4 Board,  
P
D
(Note 1) @ T = 25°C  
300  
2.4  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance from Junction−to−Ambient  
Junction and Storage Temperature Range  
R
416  
°C/W  
°C  
q
JA  
T , T  
J
−65 to +150  
stg  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
2
1. FR−4 printed circuit board, single−sided copper, mounting pad 1 cm .  
ELECTRICAL CHARACTERISTICS  
(T = 25°C unless otherwise noted,  
A
V = 0.9 V Max. @ I = 10 mA for all types)  
F
F
Symbol  
Parameter  
I
V
Reverse Zener Voltage @ I  
Reverse Current  
Z
ZT  
I
F
I
ZT  
Z
Maximum Zener Impedance @ I  
Reverse Current  
ZT  
ZK  
ZT  
I
V
Z
V
R
Z
Maximum Zener Impedance @ I  
ZK  
ZK  
V
I
V
F
R
ZT  
I
Reverse Leakage Current @ V  
I
R
R
V
Reverse Voltage  
Forward Current  
R
I
F
V
F
Forward Voltage @ I  
F
QV  
Maximum Temperature Coefficient of V  
Z
Z
Zener Voltage Regulator  
C
Max. Capacitance @V = 0 and f = 1 MHz  
R
http://onsemi.com  
2
 
MM3ZxxxST1G Series, SZMM3ZxxxST1G Series  
ELECTRICAL CHARACTERISTICS (V = 0.9 Max @ I = 10 mA for all types)  
F
F
Z
ZT  
Max  
IR @ VR  
d
@ I  
/dt (mV/k)  
VZ  
I = IZT  
Z
I
Z
Z
ZK  
= 5 mA  
Zener Voltage VZ  
ZT1  
@ 10%  
Mod W  
Max  
Test  
Current  
Izt mA  
C pF Max @  
= 0  
= 0.5  
mA W  
Max  
Device  
V
R
Marking  
Min  
2.29  
Max  
2.51  
mA  
V
Min  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
−2.7  
−2.0  
0.4  
Max  
0
f = 1 MHz  
450  
450  
450  
450  
450  
450  
450  
260  
225  
200  
185  
155  
140  
135  
130  
130  
130  
130  
120  
130  
105  
100  
85  
Device*  
MM3Z2V4ST1G  
MM3Z2V7ST1G  
MM3Z3V0ST1G  
MM3Z3V3ST1G  
MM3Z3V6ST1G  
MM3Z3V9ST1G  
MM3Z4V3ST1G  
MM3Z4V7ST1G  
MM3Z5V1ST1G  
MM3Z5V6ST1G  
MM3Z6V2ST1G  
MM3Z6V8ST1G  
MM3Z7V5ST1G  
MM3Z8V2ST1G  
MM3Z9V1ST1G  
MM3Z10VST1G  
MM3Z11VST1G  
MM3Z12VST1G  
MM3Z13VST1G  
MM3Z15VST1G  
MM3Z16VST1G  
MM3Z18VST1G  
MM3Z20VST1G  
MM3Z22VST1G  
MM3Z24VST1G  
MM3Z27VST1G  
MM3Z30VST1G  
MM3Z33VST1G  
MM3Z36VST1G  
MM3Z39VST1G  
T2  
T3  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
2.0  
1000  
1000  
1000  
1000  
1000  
1000  
1000  
800  
500  
200  
100  
160  
160  
160  
160  
160  
160  
80  
100  
100  
100  
95  
90  
90  
90  
80  
60  
40  
10  
15  
15  
15  
15  
15  
20  
25  
30  
40  
40  
45  
55  
55  
70  
80  
80  
80  
90  
130  
50  
20  
1.0  
2.59  
2.81  
1.0  
0
T4  
2.90  
3.11  
10  
1.0  
0
T5  
3.32  
3.53  
5.0  
1.0  
0
T6  
3.49  
3.71  
5.0  
1.0  
0
T7  
3.89  
4.16  
3.0  
1.0  
−2.5  
0
T8  
4.17  
4.43  
3.0  
1.0  
T9  
4.55  
4.75  
3.0  
2.0  
0.2  
1.2  
2.5  
3.7  
4.5  
5.3  
6.2  
7.0  
8.0  
9.0  
10  
TA  
4.98  
5.2  
2.0  
2.0  
TC  
TE  
TF  
5.49  
5.73  
1.0  
2.0  
6.06  
6.33  
3.0  
4.0  
6.65  
6.93  
2.0  
4.0  
1.2  
TG  
TH  
TK  
WB  
WC  
TN  
TQ  
TP  
TU  
TW  
U8  
WP  
WT  
WQ  
WV  
WR  
WU  
WN  
7.28  
7.6  
1.0  
5.0  
2.5  
8.02  
8.36  
0.7  
5.0  
3.2  
8.85  
9.23  
0.5  
6.0  
3.8  
9.80  
10.20  
11.22  
12.24  
13.49  
14.98  
16.51  
18.35  
20.40  
22.47  
24.78  
27.53  
30.69  
33.79  
36.87  
39.78  
0.5  
6.0  
4.5  
10.78  
11.74  
12.91  
14.34  
15.85  
17.56  
19.60  
21.54  
23.72  
26.19  
29.19  
32.15  
35.07  
38.22  
0.1  
8.0  
5.4  
0.1  
8.0  
6.0  
160  
80  
0.1  
8.0  
7.0  
11  
0.1  
11  
8.8  
12.7  
14  
80  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
11.2  
12.6  
14.0  
15.4  
16.8  
18.9  
21.0  
23.2  
25.2  
27.3  
10.4  
12.4  
14.4  
16.4  
18.4  
21.4  
24.4  
27.4  
30.4  
33.4  
80  
16  
100  
100  
120  
300  
300  
300  
500  
500  
18  
20  
85  
22  
80  
25.3  
29.4  
33.4  
37.4  
41.2  
70  
70  
70  
70  
45  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
*Include SZ-prefix devices where applicable.  
http://onsemi.com  
3
MM3ZxxxST1G Series, SZMM3ZxxxST1G Series  
TYPICAL CHARACTERISTICS  
1000  
100  
1000  
T = 25°C  
Z(AC)  
f = 1 kHz  
J
I
= 0.1 I  
Z(DC)  
100  
I = 1 mA  
Z
150°C  
10  
10  
5 mA  
75°C 25°C  
0.5 0.6  
0°C  
0.8  
1.0  
1.0  
3.0  
10  
0.4  
0.7  
0.9  
1.0  
1.1  
1.2  
V , NOMINAL ZENER VOLTAGE  
Z
V , FORWARD VOLTAGE (V)  
F
Figure 1. Effect of Zener Voltage on  
Zener Impedance  
Figure 2. Typical Forward Voltage  
1000  
100  
1000  
100  
10  
T = 25°C  
A
1 V BIAS  
0 V BIAS  
BIAS AT  
1.0  
+150°C  
50% OF V NOM  
Z
0.1  
0.01  
10  
+25°C  
55°C  
0.001  
0.0001  
1.0  
0.00001  
4.0  
10  
0
5.0  
V , NOMINAL ZENER VOLTAGE (V)  
10  
V , NOMINAL ZENER VOLTAGE (V)  
Z
Z
Figure 3. Typical Capacitance  
Figure 4. Typical Leakage Current  
100  
10  
100  
80  
T = 25°C  
A
60  
1.0  
40  
0.1  
20  
0
0.01  
0
2.0  
4.0  
6.0  
8.0  
10  
0
25  
50  
75  
100  
125  
150  
V , ZENER VOLTAGE (V)  
Z
TEMPERATURE (°C)  
Figure 6. Steady State Power Derating  
Figure 5. Zener Voltage versus Zener Current  
(VZ Up to 9 V)  
http://onsemi.com  
4
MM3ZxxxST1G Series, SZMM3ZxxxST1G Series  
PACKAGE DIMENSIONS  
SOD−323  
CASE 477−02  
ISSUE H  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING  
WITH SOLDER PLATING.  
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
5. DIMENSION L IS MEASURED FROM END OF  
RADIUS.  
H
E
D
1
E
b
2
MILLIMETERS  
DIM MIN NOM MAX  
0.80  
INCHES  
NOM MAX  
1.00 0.031 0.035 0.040  
0.10 0.000 0.002 0.004  
0.006 REF  
MIN  
A
0.90  
0.05  
A1 0.00  
A3  
0.15 REF  
0.32  
0.12 0.177 0.003 0.005 0.007  
1.70  
1.25  
A3  
A
b
C
D
E
L
0.25  
0.089  
1.60  
1.15  
0.08  
2.30  
0.4 0.010 0.012 0.016  
1.80 0.062 0.066 0.070  
1.35 0.045 0.049 0.053  
0.003  
H
2.50  
2.70 0.090 0.098 0.105  
E
L
A1  
C
STYLE 1:  
PIN 1. CATHODE  
2. ANODE  
NOTE 5  
NOTE 3  
SOLDERING FOOTPRINT*  
0.63  
0.025  
0.83  
0.033  
1.60  
0.063  
2.85  
0.112  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
MM3Z2V4ST1/D  
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