CZT7090LE
ENHANCED SPECIFICATION
www.centralsemi.com
SURFACE MOUNT
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT7090LE is an
Enhanced Specification Low V PNP Silicon
LOW V
PNP
CE(SAT)
SILICON POWER TRANSISTOR
CE(SAT)
Power Transistor packaged in an industry standard
SOT-223 case. High Collector Current, coupled with a
Low Saturation Voltage, make this an excellent choice
for industrial and consumer applications where electrical
and thermal operational efficiency are top priorities.
MARKING: FULL PART NUMBER
FEATURES:
SOT-223 CASE
APPLICATIONS:
• Low V
PNP Transistor
CE(SAT)
• High Current (I =3.0A MAX)
C
• Power Management / DC-DC Converters
• Portable and Battery Powered Products
• LAN Equipment / Motor Controllers
• V
=0.132V TYP @ I =2.0A
CE(SAT) C
• SOT-223 Surface Mount Package
• Complementary NPN device: CZT3090LE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
V
V
A
A
W
°C
°C/W
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
V
V
V
60
50
6.0
3.0
5.0
♦
♦
CBO
CEO
EBO
I
C
I
CM
P
T
2.0
D
T
-65 to +150
62.5
J, stg
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C)
A
TEST CONDITIONS
MIN
TYP
MAX
UNITS
nA
µA
nA
V
V
V
mV
mV
mV
V
♦SI YMBOL
V
V
V
=50V
=50V, T =100°C
=5.0V
50
10
50
CBO
CBO
CB
CB
EB
I
A
I
♦
EBO
♦BV
I =100μA
60
50
6.0
CBO
CEO
EBO
CE(SAT)
CE(SAT)
CE(SAT)
BE(SAT)
FE
FE
FE
FE
FE
C
BV
I =10mA
C
♦
BV
V
I =100μA
E
♦
I =500mA, I =5.0mA
76
124
132
0.888
363
314
281
228
177
175
250
300
1.0
♦
C
B
♦V
I =1.0A, I =10mA
C B
♦
V
I =2.0A, I =50mA
C B
V
h
h
I =2.0A, I =100mA
C B
V
=2.0V, I =10mA
300
250
250
150
100
800
CE
CE
CE
CE
CE
CB
CE
C
V
V
V
V
V
V
=2.0V, I =500mA
C
♦h
=2.0V, I =1.0A
C
h
=2.0V, I =2.0A
C
h
C
f
=2.0V, I =3.0A
C
=10V, I =0, f=1.0MHz
=5.0V, I =50mA, f=50MHz
35
pF
MHz
ob
E
C
100
T
♦ Enhanced specification
R1 (1-March 2010)
