TM
Central
CZTA27
Semiconductor Corp.
NEW
NPN HIGH VOLTAGE
DARLINGTON TRANSISTOR
DESCRIPTION
The CENTRAL SEMICONDUCTOR CZTA27
type is a NPN Silicon Darlington Transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for applications requiring extremely
high gain and high voltage.
SOT-223 CASE
MAXIMUM RATINGS (T =25°C)
UNITS
A
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
I
60
V
CES
EBO
10
V
500
2.0
mA
W
C
Power Dissipation
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
J stg
-65 to +150
62.5
°C
Q
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
V
V
V
=50V
=50V
=10V
100
500
100
nA
nA
nA
V
CBO
CB
CE
EB
I
CES
I
EBO
BV
BV
V
I =100mA
60
60
CBO
CES
C
I =100mA
V
C
I =100mA, I =0.1mA
1.5
2.0
V
CE(SAT)
BE(ON)
C
B
V
h
V
=5.0V, I =100mA
C
=5.0V, I =10mA
C
=5.0V, I =100mA
C
V
CE
CE
CE
CE
V
V
V
10,000
10,000
125
FE
FE
h
f
=5.0V, I =10mA, f=100MHz
C
MHz
T
408
