TM
Ce n t r a l
CZT5338
S e m ic o n d u c t o r Co r p .
NPN SILICON
POWER TRANSISTOR
DESCRIPTION:
TheCENTRALSEMICONDUCTORCZT5338
type is an NPN silicon power transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for applications requiring extremely
high current amplification and switching
capability.
POWER TM
223
SOT-223 CASE
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
V
100
100
6.0
5.0
1.0
2.0
V
V
V
A
A
CBO
CEO
EBO
V
V
I
C
B
P
I
W
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
o
T ,T
J stg
JA
-65 to +150
62.5
C
C/W
Θ
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
10
100
100
UNITS
µA
µA
µA
V
I
I
I
V
V
V
=100V
=6.0V
=90V
CBO
EBO
CEO
CEO
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
FE
CB
BE
CE
BV
V
V
V
V
h
h
h
I =50mA
100
C
I =2.0A, I =200mA
0.7
1.2
1.2
1.8
V
V
V
V
C
B
B
B
B
I =5.0A, I =500mA
C
I =2.0A, I =200mA
C
I =5.0A, I =500mA
C
V
=2.0V, I =500mA
30
30
20
CE
CE
CE
C
V
V
=2.0V, I =2.0A
C
120
=2.0V, I =5.0A
FE
C
312
