TM
Ce n t r a l
CZT4033
S e m ic o n d u c t o r Co r p .
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CZT4033 type is an PNP silicon transistor
manufacturedbytheepitaxialplanarprocess,
epoxy molded in a surface mount package,
designed for high current general purpose
amplifier applications.
SOT-223 CASE
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Power Dissipation
V
V
V
80
80
5.0
1.0
1.5
2.0
V
V
V
A
A
CBO
CEO
EBO
I
C
I
CM
P
W
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
T ,T
-65 to +150
62.5
C
J stg
o
Θ
C/W
JA
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
50
10
UNITS
I
I
V
V
=60V
=5.0V
nA
nA
V
V
V
V
V
V
V
CBO
EBO
CBO
CEO
EBO
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
FE
FE
FE
T
CB
EB
BV
BV
BV
V
V
V
V
h
h
h
h
f
C
C
I =10µA
80
80
5.0
C
I =10mA
C
I =10µA
E
I =150mA, I =15mA
0.15
0.50
0.90
1.10
C
C
B
B
B
B
I =500mA, I =50mA
I =150mA, I =15mA
C
I =500mA, I =50mA
C
V
=5.0V, I =0.1mA
75
100
70
25
100
CE
CE
CE
CE
CE
CB
EB
C
V
V
V
V
V
V
=5.0V, I =100mA
C
300
=5.0V, I =500mA
C
=5.0V, I =1.0A
C
=10V, I =50mA, f=1.0MHz
MHz
pF
pF
C
=10V, I =0, f=1.0MHz
E
20
110
ob
=0.5V, I =0, f=1.0MHz
ib
C
310
