TM
CZT3904 NPN
CZT3906 PNP
Ce n t r a l
S e m ic o n d u c t o r Co r p .
COMPLEMENTARY
DESCRIPTION:
SILICON TRANSISTORS
The CENTRAL SEMICONDUCTOR
CZT3904,CZT3906typesarecomplementary
silicon transistors manufactured by the
epitaxial planar process, epoxy molded in a
surface mount package, designed for small
signal general purpose and switching
applications.
SOT-223 CASE
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
CZT3904
CZT3906
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
60
40
6.0
40
40
5.0
V
V
V
mA
W
CBO
CEO
EBO
I
P
200
2.0
C
Power Dissipation
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
T ,T
-65 to +150
62.5
C
C/W
J stg
o
Θ
JA
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
CZT3904
CZT3906
SYMBOL
TEST CONDITIONS
=30V, V =3.0V
MIN MAX
MIN MAX
UNITS
nA
V
I
V
50
50
CEV
CE
EB
BV
BV
BV
V
V
V
V
h
h
h
h
h
I =10µA
60
40
6.0
40
40
5.0
CBO
CEO
EBO
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
I =1.0mA
V
V
V
V
V
V
C
I =10µA
E
I =10mA, I =1.0mA
0.20
0.30
0.25
0.40
C
C
B
B
B
B
I =50mA, I =5.0mA
I =10mA, I =1.0mA
0.65
0.85
0.95
0.65
0.85
0.95
C
I =50mA, I =5.0mA
C
V
=1.0V, I =0.1mA
40
70
60
80
CE
CE
CE
CE
CE
C
V
V
V
V
=1.0V, I =1.0mA
C
FE
FE
FE
=1.0V, I =10mA
100
60
300
100
60
300
C
=1.0V, I =50mA
C
=1.0V, I =100mA
30
30
FE
C
308
