TM
Ce n t r a l
CZT3019
S e m ic o n d u c t o r Co r p .
NPN SILICON TRANSISTOR
DESCRIPTION:
TheCENTRALSEMICONDUCTORCZT3019
typeisanNPNsilicontransistormanufactured
by the epitaxial planar process, epoxy molded
inasurfacemountpackage, designedforhigh
currentgeneralpurposeamplifierapplications.
SOT-223 CASE
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Power Dissipation
V
V
V
120
80
7.0
1.0
1.5
2.0
V
V
V
A
A
CBO
CEO
EBO
I
C
I
CM
P
W
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
o
T ,T
-65 to +150
62.5
C
C/W
J stg
Θ
JA
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
10
10
UNITS
I
I
V
V
=90V
=5.0V
nA
nA
V
V
V
V
V
V
CBO
EBO
CBO
CEO
EBO
CE(SAT)
CE(SAT)
BE(SAT)
FE
FE
FE
FE
CB
EB
BV
BV
BV
V
V
V
h
h
I =100µA
120
80
7.0
C
I =30mA
C
I =100µA
E
I =150mA, I =15mA
0.2
0.5
1.1
C
B
B
B
C
I =500mA, I =50mA
C
I =150mA, I =15mA
C
V
=10V, I =0.1mA
50
90
100
50
CE
CE
CE
CE
CE
V
V
V
V
=10V, I =10mA
C
h
h
h
=10V, I =150mA
300
C
=10V, I =500mA
C
=10V, I =1.0A
15
FE
C
306
