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CZT2222ABKLEADFREE

型号:

CZT2222ABKLEADFREE

品牌:

CENTRAL[ CENTRAL SEMICONDUCTOR CORP ]

页数:

2 页

PDF大小:

97 K

TM  
Ce n t r a l  
CZT2222A  
S e m ic o n d u c t o r Co r p .  
NPN SILICON TRANSISTOR  
DESCRIPTION  
The  
CENTRAL  
SEMICONDUCTOR  
CZT2222A type is an NPN silicon transistor  
manufactured by the epitaxial planar process,  
epoxy molded in a surface mount package,  
designed for general purpose amplifier and  
switching applications.  
SOT-223 CASE  
o
MAXIMUM RATINGS (T =25 C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
75  
40  
6.0  
600  
2.0  
V
V
V
mA  
W
CBO  
CEO  
EBO  
I
P
C
Power Dissipation  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
o
T ,T  
-65 to +150  
62.5  
C
C/W  
J stg  
Θ
JA  
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
10  
10  
10  
10  
UNITS  
nA  
µA  
nA  
nA  
V
I
I
I
I
V
V
V
V
=60V  
=60V, T =125 C  
=3.0V  
=60V, V =3.0V  
CBO  
CBO  
EBO  
CEV  
CBO  
CEO  
EBO  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
CB  
CB  
EB  
CE  
o
A
EB  
BV  
BV  
BV  
V
V
V
V
h
I =10µA  
75  
40  
6.0  
C
I =10mA  
V
V
V
V
V
V
C
I =10µA  
E
I =150mA, I =15mA  
0.3  
1.0  
1.2  
2.0  
C
B
B
B
B
I =500mA, I =50mA  
C
I =150mA, I =15mA  
0.6  
C
I =500mA, I =50mA  
C
V
=10V, I =0.1mA  
35  
50  
75  
CE  
CE  
CE  
C
h
h
V
V
=10V, I =1.0mA  
C
FE  
=10V, I =10mA  
FE  
C
300  
SYMBOL  
TEST CONDITIONS  
MIN  
100  
50  
40  
300  
MAX  
300  
UNITS  
h
h
h
V
V
=10V, I =150mA  
FE  
FE  
FE  
CE  
CE  
C
=1.0V, I =150mA  
C
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=10V, I =500mA  
C
CE  
CE  
CB  
EB  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CB  
CE  
CC  
CC  
CC  
CC  
f
C
=20V, I =20mA, f=100MHz  
MHz  
pF  
T
C
=10V, I =0, f=1.0MHz  
E
8.0  
25  
ob  
ib  
ie  
ie  
re  
re  
fe  
fe  
C
h
h
h
h
h
h
h
=0.5V, I =0, f=1.0MHz  
pF  
kΩ  
kΩ  
C
=10V, I =1.0mA, f=1.0kHz  
C
2.0  
0.25  
8.0  
1.25  
8.0  
4.0  
300  
375  
35  
200  
150  
4.0  
10  
=10V, I =10mA, f=1.0kHz  
C
-4  
-4  
=10V, I =1.0mA, f=1.0kHz  
C
x10  
x10  
=10V, I =10mA, f=1.0kHz  
C
=10V, I =1.0mA, f=1.0kHz  
C
50  
75  
5.0  
25  
=10V, I =10mA, f=1.0kHz  
C
=10V, I =1.0mA, f=1.0kHz  
C
µmhos  
µmhos  
ps  
oe  
oe  
h
rb’C  
=10V, I =10mA, f=1.0kHz  
C
=10V, I =20mA, f=31.8MHz  
E
c
NF  
=10V, I =100µA, R =1.0k, f=1.0kHz  
dB  
ns  
ns  
ns  
C
S
t
t
t
t
=30V, V =0.5, I =150mA, I =15mA  
d
r
s
f
BE B1  
C
C
=30V, V =0.5, I =150mA, I =15mA  
25  
225  
60  
BE B1  
=30V, I =150mA, I =I =15mA  
C
B1 B2  
B1 B2  
=30V, I =150mA, I =I =15mA  
ns  
C
All dimensions in inches (mm).  
LEAD CODE:  
1) BASE  
2) COLLECTOR  
3) EMITTER  
4) COLLECTOR  
R2  
301  
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