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SZMMBZ15VDLT1G

型号:

SZMMBZ15VDLT1G

描述:

40瓦峰值功率齐纳瞬态电压抑制器[ 40 Watt Peak Power Zener Transient Voltage Suppressors ]

品牌:

ONSEMI[ ONSEMI ]

页数:

5 页

PDF大小:

114 K

MMBZ15VDLT1G,  
MMBZ27VCLT1G,  
SZMMBZ15VDLT1G,  
SZMMBZ27VCLT1G  
40 Watt Peak Power  
Zener Transient Voltage  
Suppressors  
http://onsemi.com  
SOT23 Dual Common Cathode Zeners  
for ESD Protection  
These dual monolithic silicon zener diodes are designed for  
applications requiring transient overvoltage protection capability. They  
are intended for use in voltage and ESD sensitive equipment such as  
computers, printers, business machines, communication systems,  
medical equipment and other applications. Their dual junction common  
cathode design protects two separate lines using only one package.  
These devices are ideal for situations where board space is at a  
premium.  
SOT23  
CASE 318  
STYLE 9  
ANODE 1  
ANODE 2  
3 CATHODE  
The MMBZ27VCLT1G/SZMMBZ27VCLT1G can be used to  
protect a single wire communication network form EMI and ESD  
transient surge voltages.  
MARKING DIAGRAM  
The MMBZ27VCLT1G/SZMMBZ27VCLT1G is recommended by  
the Society of Automotive Engineers (SAE), February 2000, J2411  
“Single Wire Can Network for Vehicle Applications” specification as  
a solution for transient voltage problems.  
XXX MG  
G
1
Specification Features:  
SOT23 Package Allows Either Two Separate Unidirectional  
Configurations or a Single Bidirectional Configuration  
Working Peak Reverse Voltage Range 12.8 V, 22 V  
XXX = 15D or 27C  
M
= Date Code  
G
= PbFree Package  
(Note: Microdot may be in either location)  
Standard Zener Breakdown Voltage Range 15 V, 27 V  
Peak Power 40 W @ 1.0 ms (Bidirectional),  
ORDERING INFORMATION  
per Figure 5 Waveform  
Device  
Package  
Shipping  
ESD Rating of Class 3B (exceeding 16 kV) per the Human  
Body Model  
Low Leakage < 100 nA  
Flammability Rating: UL 94 VO  
MMBZ15VDLT1G  
SOT23  
3,000 /  
(PbFree)  
Tape & Reel  
SZMMBZ15VDLT1G SOT23  
(PbFree)  
3,000 /  
Tape & Reel  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AECQ101 Qualified and  
PPAP Capable  
PbFree Packages are Available*  
MMBZ15VDLT3G  
SOT23  
(PbFree)  
10,000 /  
Tape & Reel  
SZMMBZ15VDLT3G SOT23  
(PbFree)  
10,000 /  
Tape & Reel  
Mechanical Characteristics:  
MMBZ27VCLT1G  
SOT23  
(PbFree)  
3,000 /  
Tape & Reel  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
SZMMBZ27VCLT1G SOT23  
(PbFree)  
3,000 /  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
May, 2012 Rev. 12  
MMBZ15VDLT1/D  
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Power Dissipation @ 1.0 ms (Note 1) @ T 25°C  
P
pk  
40  
Watts  
L
Total Power Dissipation on FR5 Board (Note 2)  
°P °  
D
@ T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance JunctiontoAmbient  
R
556  
°C/W  
q
JA  
Total Power Dissipation on Alumina Substrate (Note 3)  
°P °  
D
°
@ T = 25°C  
300  
2.4  
mW  
A
Derate above 25°C  
mW/°C  
Thermal Resistance JunctiontoAmbient  
Junction and Storage Temperature Range  
Lead Solder Temperature Maximum (10 Second Duration)  
R
417  
55 to +150  
260  
°C/W  
°C  
q
JA  
T , T  
J
stg  
T
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
1. Nonrepetitive current pulse per Figure 5 and derate above T = 25°C per Figure 6.  
A
2. FR5 = 1.0 x 0.75 x 0.62 in.  
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina  
ELECTRICAL CHARACTERISTICS  
(T = 25°C unless otherwise noted)  
A
I
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)  
I
F
Symbol  
Parameter  
I
PP  
Maximum Reverse Peak Pulse Current  
V
C
Clamping Voltage @ I  
PP  
V
C
V
V
V
Working Peak Reverse Voltage  
BR RWM  
RWM  
V
I
V
F
R
T
I
R
Maximum Reverse Leakage Current @ V  
I
RWM  
V
BR  
Breakdown Voltage @ I  
T
I
T
Test Current  
V
Maximum Temperature Coefficient of V  
Forward Current  
BR  
BR  
I
PP  
I
F
UniDirectional TVS  
V
F
Forward Voltage @ I  
F
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)  
(V = 0.9 V Max @ I = 10 mA)  
F
F
Breakdown Voltage  
V
C
@ I (Note 5)  
PP  
V
BR  
(Note 4) (V)  
@ I  
V
C
I
PP  
V
RWM  
I
R
@ V  
V
BR  
T
RWM  
Device  
mV/5C  
12  
Volts  
nA  
Min  
14.3  
Nom  
Max  
mA  
V
A
Marking  
Device*  
MMBZ15VDLT1G/T3G  
15D  
12.8  
100  
15  
15.8  
1.0  
21.2  
1.9  
(V = 1.1 V Max @ I = 200 mA)  
F
F
Breakdown Voltage  
V
C
@ I (Note 5)  
PP  
V
BR  
(Note 4) (V)  
@ I  
V
C
I
PP  
V
RWM  
I
R
@ V  
V
BR  
T
RWM  
Device  
mV/5C  
26  
Volts  
nA  
Min  
Nom  
Max  
mA  
V
A
Marking  
Device*  
MMBZ27VCLT1G/T3G  
27C  
22  
50  
25.65  
27  
28.35  
1.0  
38  
1.0  
4. V measured at pulse test current I at an ambient temperature of 25°C.  
BR  
T
5. Surge current waveform per Figure 5 and derate per Figure 6  
*Include SZ-prefix devices where applicable.  
http://onsemi.com  
2
 
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G  
TYPICAL CHARACTERISTICS  
MMBZ15VDLT1G, SZMMBZ15VDLT1G  
MMBZ27VCLT1G, SZMMBZ27VCLT1G  
17  
16  
15  
29  
28  
27  
BIDIRECTIONAL  
BIDIRECTIONAL  
14  
13  
26  
UNIDIRECTIONAL  
25  
-ꢀ55  
-ꢀ40  
+ꢀ25  
+ꢀ85  
+ꢀ125  
+ꢀ25  
+ꢀ85  
+ꢀ125  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 1. Typical Breakdown Voltage  
versus Temperature  
Figure 2. Typical Breakdown Voltage  
versus Temperature  
1000  
100  
10  
300  
250  
200  
ALUMINA SUBSTRATE  
150  
100  
50  
1
FR-5 BOARD  
0.1  
0.01  
0
-ꢀ40  
+ꢀ25  
+ꢀ85  
+ꢀ125  
0
25  
50  
75  
100  
125  
150  
175  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 3. Typical Leakage Current  
versus Temperature  
Figure 4. Steady State Power Derating Curve  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
PULSE WIDTH (t ) IS DEFINED  
P
AS THAT POINT WHERE THE  
PEAK CURRENT DECAYS TO  
t 10 ms  
r
50% OF I .  
PP  
PEAK VALUEꢁ—ꢁI  
PP  
100  
50  
0
I
PP  
HALF VALUEꢁ—  
2
t
P
0
1
2
3
4
0
25  
50  
75  
100  
125  
150  
175  
200  
T , AMBIENT TEMPERATURE (°C)  
A
t, TIME (ms)  
Figure 5. Pulse Waveform  
Figure 6. Pulse Derating Curve  
http://onsemi.com  
3
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G  
TYPICAL APPLICATIONS  
V
Batt  
Single Wire  
CAN Transceiver  
47 mH  
Bus  
Loss of  
Ground  
Protection  
Circuit  
R
Load  
9.09 kW 1%  
*
Load  
C
Load  
GND  
220 pF 10%  
*ESD Protection MMBZ27VCLT1G or equivalent. May be  
located in each ECU (C needs to be reduced accordingly)  
Load  
or at a central point near the DLC.  
Figure 7. Single Wire CAN Network  
Figure is the recommended solution for transient EMI/ESD protection. This circuit is shown in the  
Society of Automotive Engineers February, 2000 J2411 “Single Wire CAN Network for Vehicle Applications” specification  
(Figure 6, page 11). Note: the dual common anode zener configuration shown above is electrically equivalent to a dual common  
cathode zener configuration.  
http://onsemi.com  
4
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G  
PACKAGE DIMENSIONS  
SOT23 (TO236)  
CASE 31808  
ISSUE AP  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH  
SEE VIEW C  
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM  
3
THICKNESS OF BASE MATERIAL.  
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
H
E
MILLIMETERS  
INCHES  
E
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.09  
2.80  
1.20  
1.78  
0.10  
0.35  
NOM  
1.00  
0.06  
0.44  
0.13  
2.90  
1.30  
1.90  
0.20  
0.54  
MAX  
MIN  
NOM  
0.040  
0.002  
0.018  
0.005  
0.114  
0.051  
0.075  
0.008  
0.021  
MAX  
0.044  
0.004  
0.020  
0.007  
0.120  
0.055  
0.081  
0.012  
0.029  
1.11  
0.10  
0.50  
0.18  
3.04  
1.40  
2.04  
0.30  
0.69  
0.035  
0.001  
0.015  
0.003  
0.110  
0.047  
0.070  
0.004  
0.014  
c
1
2
b
0.25  
e
q
H
q
2.10  
0°  
2.40  
−−−  
2.64  
10°  
0.083  
0°  
0.094  
−−−  
0.104  
10°  
A
E
L
STYLE 9:  
PIN 1. ANODE  
2. ANODE  
A1  
L1  
VIEW C  
3. CATHODE  
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
0.8  
0.031  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81358171050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
MMBZ15VDLT1/D  
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