IW4040B
MAXIMUM RATINGS*
Symbol
Parameter
Value
-0.5 to +20
-0.5 to VCC +0.5
-0.5 to VCC +0.5
±10
Unit
V
VCC
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
V
IN
V
VOUT
IIN
V
mA
PD
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
500*1
100
mW
mW
Power Dissipation per Output Transistor
Storage Temperature
P
tot
Tstg
TL
-65 to +150
260
°C
°C
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
*1 For TA=-55 to 100°C (package plastic DIP), for TA=-55 to 65°C (package SOIC)
+Derating - Plastic DIP: - 12 mW/°C from 100°Ñ to 125°C
SOIC Package: : - 7 mW/°C from 65°Ñ to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
3.0
0
Max
Unit
V
VCC
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
18
VCC
V , VOUT
IN
V
TA
-55
+125
°C
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages
to this high-impedance circuit. For proper operation, V and VOUT should be constrained to the range GND£(V or
IN
IN
VOUT)£VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused
outputs must be left open.
INTEGRAL
2
