IW4027B
MAXIMUM RATINGS*
Symbol
Parameter
Value
-0.5 to +20
-0.5 to VCC +0.5
±10
Unit
V
VCC
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Input Current, per Pin
V
IN
V
IIN
PD
mA
mW
Power Dissipation in Still Air, Plastic DIP, SOIC
Package
500**
Ptot
Tstg
TL
Power Dissipation per Output Transistor
Storage Temperature
100
-65 to +150
260
mW
°C
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
°C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
**Derating: - Plastic DIP from -55 to +100°C
- SOIC Package from -55 to +65°C
- Plastic DIP: - 10 mW/°C from +100 to +125°C
- SOIC Package: : - 7 mW/°C from +65 to +125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
Operating Temperature, All Package Types
Min
3.0
0
Max
18
Unit
V
V
IN
VCC
V
TA
-55
+125
°C
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages
to this high-impedance circuit. For proper operation
V
IN
should be constrained to the range
GND£V £VCC.
IN
Unused inputs mu st always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused
outputs must be left open.
2
INTEGRAL
