CZT953
www.centralsemi.com
SURFACE MOUNT
HIGH CURRENT
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT953 type is
a high current PNP silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a surface
mount package, designed for high voltage and high
current amplifier applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C)
Collector-Base Voltage
SYMBOL
UNITS
V
V
V
A
W
°C
°C/W
A
V
V
V
140
100
6.0
5.0
3.0
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance
I
C
P
T
D
T
-65 to +150
41.7
J, stg
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
nA
μA
nA
nA
V
V
V
V
mV
mV
mV
mV
V
I
I
I
I
V
V
V
V
=100V
=100V, T =100°C
50
1.0
50
10
CBO
CBO
CER
EBO
CB
CB
CE
EB
A
BE
=100V, R ≤1.0kΩ
=6.0V
BV
BV
BV
BV
I =100μA
140
140
100
6.0
170
150
120
9.0
20
CBO
CER
CEO
C
I =10mA, R ≤1.0kΩ
BE
C
I =10mA
C
I =100μA
EBO
E
V
V
V
V
V
I =100mA, I =10mA
50
CE(SAT)
CE(SAT)
CE(SAT)
CE(SAT)
BE(SAT)
FE
C
B
I =1.0A, I =100mA
90
120
220
420
1.2
C
B
B
B
B
I =2.0A, I =200mA
170
320
1.0
C
I =4.0A, I =400mA
C
I =4.0A, I =400mA
C
h
h
h
h
h
V
=1.0V, I =10mA
100
100
50
CE
CE
CE
CE
CE
CE
CB
C
V
V
V
V
V
V
=1.0V, I =1.0A
200
70
45
15
150
300
FE
FE
FE
FE
C
=1.0V, I =3.0A
C
=1.0V, I =4.0A
30
C
=1.0V, I =10A
C
f
=10V, I =100mA, f=50MHz
MHz
pF
T
C
C
=10V, I =0, f=1.0MHz
E
45
ob
Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in2 (minimum)
R3 (1-March 2010)
