CZT5338
www.centralsemi.com
SURFACE MOUNT
NPN SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5338 type is
an NPN silicon power transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for applications requiring
extremely high current amplification and switching
capability.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
A
Collector-Base Voltage
V
100
100
V
V
CBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
CEO
V
6.0
V
EBO
Continuous Collector Current
Continuous Base Current
Power Dissipation
I
5.0
A
C
I
1.0
A
B
P
D
2.0
W
Operating and Storage Junction Temperature
Thermal Resistance
T
T
-65 to +150
62.5
°C
°C/W
J, stg
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
µA
µA
µA
V
I
V
V
V
=100V
=90V
10
CBO
CB
CE
BE
I
100
100
CEO
I
=6.0V
EBO
BV
I =50mA
C
100
CEO
V
I =2.0A, I =200mA
0.7
1.2
1.2
1.8
V
CE(SAT)
C
B
V
I =5.0A, I =500mA
V
CE(SAT)
C
B
V
I =2.0A, I =200mA
V
BE(SAT)
C
B
V
I =5.0A, I =500mA
V
BE(SAT)
C
B
h
V
=2.0V, I =500mA
30
30
20
30
FE
CE
CE
CE
CE
CB
BE
C
h
V
V
V
V
V
V
V
V
V
=2.0V, I =2.0A
C
=2.0V, I =5.0A
120
FE
h
FE
C
f
=10V, I =500mA, f=10MHz
C
=10V, I =0, f=1.0MHz
MHz
pF
pF
ns
T
C
250
1000
100
100
2.0
ob
E
C
ib
t
=2.0V, IC=0, f=1.0MHz
=40V, V =3.0V, I =2.0A, I =200mA
d
CC
CC
CC
CC
BE
C
B1
t
=40V, V =3.0V, I =2.0A, I =200mA
ns
r
BE B1
C
t
=40V, I =2.0A, I =I =200mA
µs
s
C
B1 B2
t
f
=40V, I =2.0A, I =I =200mA
200
ns
C
B1 B2
R5 (1-March 2010)
