CZT3090LE
ENHANCED SPECIFICATION
www.centralsemi.com
SURFACE MOUNT
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT3090LE is an
Enhanced Specification Low V NPN Silicon
LOW V
NPN
CE(SAT)
SILICON POWER TRANSISTOR
CE(SAT)
Power Transistor packaged in an industry standard
SOT-223 case. High Collector Current, coupled with a
Low Saturation Voltage, make this an excellent choice
for industrial and consumer applications where electrical
and thermal operational efficiency are top priorities.
MARKING: FULL PART NUMBER
FEATURES:
SOT-223 CASE
APPLICATIONS:
• Low V
NPN Transitor
CE(SAT)
• High Current (I =3.0A MAX)
C
• Power Management / DC-DC Converters
• Portable and Battery Powered Products
• LAN Equipment / Motor Controllers
• V
=0.155V TYP @ I =3.0A
CE(SAT)
C
• SOT-223 Surface Mount Package
• Complementary PNP device: CZT7090LE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
A
♦
♦
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
V
V
V
60
50
6.0
3.0
5.0
V
V
V
A
A
W
°C
°C/W
CBO
CEO
EBO
I
C
I
CM
P
T
2.0
D
T
-65 to +150
62.5
J, stg
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C)
A
TEST CONDITIONS
MIN
TYP
MAX
50
50
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
♦SI YMBOL
V
V
=50V
=5.0V
CBO
EBO
CB
EB
I
♦
♦BV
I =100μA
60
50
6.0
CBO
CEO
C
♦BV
I =10mA
C
BV
I =10µA
EBO
CE(SAT)
CE(SAT)
CE(SAT)
CE(SAT)
FE
E
V
V
V
I =100mA, I =1.0mA
37
66
77
50
C
C
B
♦
♦
I =1.0A, I =20mA
100
150
250
B
I =2.0A, I =200mA
C
B
B
♦V
♦h
I =3.0A, I =60mA
155
C
V
=2.0V, I =500mA
300
300
150
CE
CE
CE
CB
CE
C
h
h
V
V
V
V
=2.0V, I =1.0A
C
♦
FE
FE
=2.0V, I =3.0A
174
C
C
=10V, I =0, f=1.0MHz
E
25
pF
MHz
♦
ob
f
=10V, I =500mA
100
T
C
♦ Enhanced Specification
R1 (1-March 2010)
