CZT3019
www.centralsemi.com
SURFACE MOUNT
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT3019 type is
an NPN silicon transistor manufactured by the epitaxial
planar process, epoxy molded in a surface mount
package, designed for high current general purpose
amplifier applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
A
Collector-Base Voltage
V
V
V
140
80
V
V
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
7.0
V
Continuous Collector Current
Peak Collector Current
I
1.0
A
C
I
1.5
A
CM
Power Dissipation
P
2.0
W
D
Operating and Storage Junction Temperature
Thermal Resistance
T
T
-65 to +150
62.5
°C
°C/W
J, stg
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
10
UNITS
I
I
V
V
=90V
nA
nA
V
CBO
EBO
CB
EB
=5.0V
10
BV
BV
BV
I =100μA
140
80
CBO
CEO
EBO
C
I =30mA
V
C
I =100μA
7.0
V
E
V
V
V
I =150mA, I =15mA
0.2
0.5
1.1
V
CE(SAT)
CE(SAT)
BE(SAT)
FE
C
B
I =500mA, I =50mA
V
C
B
I =150mA, I =15mA
V
C
B
h
h
h
h
h
V
=10V, I =0.1mA
50
90
CE
CE
CE
CE
CE
CE
CB
EB
CE
C
V
V
V
V
V
V
V
V
=10V, I =10mA
C
FE
=10V, I =150mA
100
50
300
FE
C
=10V, I =500mA
FE
C
=10V, I =1.0A
15
FE
C
f
=10V, I =50mA, f=20MHz
100
400
12
MHz
pF
T
C
C
C
=10V, I =0, f=1.0MHz
E
ob
=0.5V, I =0, f=1.0MHz
60
pF
ib
C
NF
=10V, I =100μA,
C
R =1.0kΩ, f=1.0kHz
4.0
dB
S
R6 (9-November 2010)
